Influence of Preliminary Plasma Processing on Luminescent Properties of Porous Silicon

2014 ◽  
Vol 213 ◽  
pp. 90-95
Author(s):  
Nikolay Gennadievich Galkin ◽  
Dmitrii Tkhyarbonovich Yan ◽  
Evgeniy Anatolievich Chusovitin ◽  
Anton Borisovich Rasin ◽  
Konstantin Nikolaevich Galkin ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Plasma Treatment ◽  
Spectral Composition ◽  
Silicon Layer ◽  
Luminescent Properties ◽  
Blue Shift ◽  
Porous Silicon Layer ◽  
Radiative Properties ◽  
Photoluminescence Intensity ◽  
Pl Intensity

Measurements of radiative properties of porous silicon after compression plasma treatment have been carried out. Significant increase of photoluminescence intensity and blue shift of spectra have been observed on studied samples in comparison with porous layers formed on monocrystalline silicon without preliminary plasma treatment. An influence of long storage of plasma modified porous silicon layer on the intensity and spectral composition of photoluminescence has been checked. A rise of PL intensity during first moth of storage and following decrease of PL intensity in the next three months has been observed. Mechanisms of changes in a spectral composition of PL and alterations of PL intensity during storage have been discussed.

On the Origin of the Electrically-Induced Spectral Shift of Porous Silicon Photo- and Electro- Luminescence

1994 ◽  
Vol 358 ◽  
Author(s):  
A. Bsiesy ◽  
M.A. Hory ◽  
F. Gaspard ◽  
R. Herino ◽  
M. Ligeon ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Voltage Drop ◽  
Silicon Layer ◽  
Blue Shift ◽  
Spectral Shift ◽  
Porous Silicon Layer ◽  
Carrier Injection ◽  
External Bias ◽  
Voltage Drops ◽  
Silicon Nanocrystallites

ABSTRACTExperimental results showing two electrically-induced phenomena, namely the voltage-tunable electroluminescence (VTEL) and the voltage-induced quenching of porous silicon photoluminescence(QPL) are given. In both cases, a spectral shift as large as 300 nm can be recorded for an external bias variation of only 0.5V. This spectral shift is characterised by a blue-shift of the whole EL line in the case of the VTEL whereas it results from a progressive and selective quenching starting by the low-energy part of the luminescence line in the case of the QPL experiments. The origin of this spectral shift is discussed in relation with an electrically-induced selective carrier injection into the silicon nanocrystallites accompanied with an enhancement of the non-radiative recombination which might take place by an Auger relaxation process. Finally, it is shown that a partial oxidation of the porous silicon layer leads to a complete loss of the selectivity of these two phenomena. This result is qualitatively discussed by considering the voltage drop distribution between the substrate and the silicon nanocrystallites. The voltage drops are modified by the growth of the oxide layer on the nanocrystallite surface leading to a modification of the energy barriers at the crystallite boundaries.

Fabrication and Characterization of Uniform Quantum Size Porous Silicon

2006 ◽  
Vol 517 ◽  
pp. 232-236 ◽  
Author(s):  
N.K. Ali ◽  
M. Roslan Hashim ◽  
Azlan Abdul Aziz
Keyword(s):  
Porous Silicon ◽  
Surface Passivation ◽  
Silicon Layer ◽  
Blue Shift ◽  
Porous Silicon Layer ◽  
Previous Method ◽  
Quantum Size ◽  
Luminescence Peak ◽  
Silicon Nanocrystallites

Porous silicon layer microstructure is sensitive to many parameters which need to be controlled during etching. These include not only anodization time, current density and applied potential but also electrolyte composition. Careful control these parameters will yield excellent reproducibility from run to run. In this paper we outline the advances in porous silicon surface quality and uniformity by recent techniques that have made the production of uniformly sized silicon nanocrystallites possible. In this work we used the oxidant H2O2 in the wet etching bath, with a high etching current. The resulting technique greatly improves the uniformity of the porous surface, producing a very thin layer of porous silicon. This is a significant improvement to the previous method. The result of a combined study of FTIR spectra and photoluminescence show that both quantum confinement and surface passivation are responsible of blue shift of the luminescence peak.

CALCULATION OF SURFACE AREAS FOR POROUS SILICON

1999 ◽  
Vol 13 (28) ◽  
pp. 1005-1009
Author(s):  
Q. R. HOU ◽  
N. CHI
Keyword(s):  
Atomic Force Microscopy ◽  
Simple Model ◽  
Porous Silicon ◽  
Surface Area ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Photoluminescence Intensity ◽  
Force Microscopy ◽  
Surface Areas ◽  
Atomic Force

Based on atomic force microscopy (AFM) images of porous silicon, a simple model has been proposed to calculate the surface areas of porous silicon. In this model, the porous silicon layer is assumed to be made of numerous identical cones with radius r and height h. The surface area changes due to the formation of porous silicon are found to be dependent on (h/r)2 and correlate with the growth of photoluminescence (PL) intensities. The rise and fall in photoluminescence intensity coincide with those of surface area changes qualitatively. This coincidence supports the hypothesis that the luminescence results from the presence of surface-localized or confined molecular emitters.

Effect of the Porous Silicon Layer Structure on Gas Adsorption

2020 ◽  
Vol 12 (4) ◽  
pp. 04020-1-04020-5
Author(s):  
A. P. Oksanich ◽  
◽  
S. E. Pritchin ◽  
M. A. Mashchenko ◽  
A. Yu. Bobryshev ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Gas Adsorption ◽  
Layer Structure ◽  
Silicon Layer ◽  
Porous Silicon Layer

scholarly journals Morphology and FT IR spectra of porous silicon

2017 ◽  
Vol 68 (7) ◽  
pp. 53-57 ◽  
Author(s):  
Martin Kopani ◽  
Milan Mikula ◽  
Daniel Kosnac ◽  
Jan Gregus ◽  
Emil Pincik
Keyword(s):  
Porous Silicon ◽  
Ir Spectra ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Layer Formation ◽  
Porous Si ◽  
Ft Ir ◽  
P Type ◽  
Type Sample ◽  
Ftir Investigation

AbstractThe morphology and chemical bods of p-type and n-type porous Si was compared. The surface of n-type sample is smooth, homogenous without any features. The surface of p-type sample reveals micrometer-sized islands. FTIR investigation reveals various distribution of SiOxHycomplexes in both p-and n-type samples. From the conditions leading to porous silicon layer formation (the presence of holes) we suggest both SiOxHyand SiFxHycomplexes in the layer.

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