scholarly journals Wafer Container Monitoring Concerning Airborne Molecular Contaminations along a 300 mm Power Semiconductor Production Flow

2021 ◽  
Vol 314 ◽  
pp. 41-46
Author(s):  
Peter Franze ◽  
Germar Schneider ◽  
Stefan Kaskel
Keyword(s):  
High Volume ◽  
Yield Losses ◽  
Production Flow ◽  
Power Semiconductors ◽  
Power Semiconductor ◽  
New Concepts ◽  
Semiconductor Production

The focus of the study was to understand the behavior of airborne molecular contaminations (AMC) within the 300 mm wafer containers called front-opening unified pods (FOUPs) in a high-volume fabrication facility for power semiconductors of Infineon Technologies Dresden. A main goal was to implement new concepts and strategies to prevent the different power semiconductors from any yield losses driven by AMC. It could be shown, that there is a strong dependency of the concentration and the type of the determined contaminations on the investigated process steps.

scholarly journals The current status of power semiconductors

2015 ◽  
Vol 28 (2) ◽  
pp. 193-203 ◽  
Author(s):  
Jan Vobecký
Keyword(s):  
Functional Performance ◽  
Wide Bandgap ◽  
Current Status ◽  
Design And Technology ◽  
Power Sector ◽  
Power Semiconductors ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Silicon Devices

Trends in the design and technology of power semiconductor devices are discussed on the threshold of the year 2015. Well established silicon technologies continue to occupy most of applications thanks to the maturity of switches like MOSFET, IGBT, IGCT and PCT. Silicon carbide (SiC) and gallium nitride (GaN) are striving to take over that of the silicon. The most relevant SiC device is the MPS (JBS) diode, followed by MOSFET and JFET. GaN devices are represented by lateral HEMT. While the long term reliability of silicon devices is well trusted, the SiC MOSFETs and GaN HEMTs are struggling to achieve a similar confidence. Two order higher cost of SiC equivalent functional performance at device level limits their application to specific cases, but their number is growing. Next five years will therefore see the co-existence of these technologies. Silicon will continue to occupy most of applications and dominate the high-power sector. The wide bandgap devices will expand mainly in the 600 - 1200 V range and dominate the research regardless of the voltage class.

Manual Assembly of 400um Bumped-Die GaN Power Semiconductor Devices

2012 ◽  
Vol 2012 (1) ◽  
pp. 000514-000523
Author(s):  
Stephan W. Henning ◽  
Luke Jenkins ◽  
Sidni Hale ◽  
Christopher G. Wilson ◽  
John Tennant ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Thermal Dissipation ◽  
Single Digit ◽  
Manual Assembly ◽  
Power Semiconductors ◽  
Power Semiconductor ◽  
Residue Removal ◽  
Power Semiconductor Devices ◽  
Package Size ◽  
The Cost

Until recently, power semiconductors were usually produced as TO, power-PAK, and D-PAK style packaging, due to die size, thermal dissipation requirements, and the vertical flow of current through the devices. The introduction of GaN to power semiconductors has allowed manufactures to produce devices with approximately 9% the footprint of similar rated D-PAK Si MOSFETs. In addition, GaN semiconductors have much better theoretical limits of specific on-resistance to breakdown voltage, when compared to Si and SiC. As of now, GaN devices offer very good performance at much less the cost of SiC, very small footprints, no reverse recovery losses of a body diode, very low RDS(ON), and very fast turn-on and turn-off times due to QGS in single-digit nC range. GaN semiconductors are expected to make vast improvements over the next decade. Unfortunately, this decrease in package size has made design prototyping significantly more challenging. Traditional manual solder iron assembly is not sufficient for these devices. Difficulties include board design, device handling, alignment, solder reflow, flux residue removal, and post-assembly inspection. The EPC 2014 and 2015 devices both have a 4mm pitch and are 1.85mm2 and 6.70mm2, respectively. In many situations, the decreased pitch and small overall size of these devices mandate the use of automated assembly equipment, such as a pick & place, to ensure quality and repeatability of assembly. However, this may not be feasible for initial prototyping, due to cost and time constraints. Here we will present a technique for manual assembly of these chip scale devices, applied specifically to the EPC 2014 and 2015. This should decrease the cost and turn time for prototype assembly when utilizing these types of chip scale packaged power semiconductor devices.

scholarly journals Fault-Tolerant SRM Drive with a Diagnosis Method Based on the Entropy Feature Approach

2020 ◽  
Vol 10 (10) ◽  
pp. 3516 ◽  
Author(s):  
Vitor F. Pires ◽  
Tito G. Amaral ◽  
Armando Cordeiro ◽  
Daniel Foito ◽  
Armando J. Pires ◽  
...  
Keyword(s):  
Fault Detection ◽  
Fault Tolerant ◽  
High Reliability ◽  
Power Converter ◽  
Fault Detection And Diagnosis ◽  
Switched Reluctance ◽  
Power Semiconductors ◽  
Power Semiconductor ◽  
Diagnosis Method ◽  
Detection And Diagnosis

The power electronic converter design is essential for the operation of the switched reluctance motor (SRM). Thus, a fault-tolerant power converter is fundamental to ensure high reliability and extend the drive operation. To achieve fault tolerance, fault detection and diagnosis methods are critical in order to identify, as soon as possible, the failure mode of the drive. To provide such capability, it is proposed in this paper a new fault-tolerant power converter scheme combined with a fault detection method regarding the most common power semiconductors failures in SRM drives. The fast and reliable proposed diagnosis method is based on the entropy theory. Based on this theory, normalized indexes (diagnostic variables) are created, which are independent from the load and speed of the motor. Through this method, it is possible to identify the faulty leg, as well as the type of power semiconductor fault. To test and evaluate the proposed solution several laboratory experiments were carried out using a 2 kW four-phase 8 / 6 SRM.

scholarly journals Comparison of Si and SiC based Power Converter Module of 150 kVA for Power System Applications

2020 ◽  
Vol 7 (1) ◽  
pp. 10-13
Author(s):  
Jan Štěpánek ◽  
Luboš Streit ◽  
Tomáš Komrska
Keyword(s):  
Power Systems ◽  
Single Phase ◽  
Power Converters ◽  
Reactive Power ◽  
Mechanical Design ◽  
Power Converter ◽  
Voltage Source ◽  
Phase Voltage ◽  
Power Semiconductors ◽  
Power Semiconductor

The paper deals with the comparison of power semiconductors based on Si and SiC in application of power converters for power systems. These are single-phase voltage-source bridge inverters with nominal power of 150 kVA. Power converters are designed to operate under both active power and reactive power. Mechanical design of the converters is ready for interchange the power semiconductor modules and assess the operation with both, Si and SiC technology.

High Speed Rail Awaits the next Breakthrough of Power Semiconductors

2014 ◽  
Vol 778-780 ◽  
pp. 1071-1076
Author(s):  
Tetsuo Uzuka ◽  
Eisuke Masada
Keyword(s):  
High Voltage ◽  
High Speed ◽  
Cooling System ◽  
Rolling Stock ◽  
High Speed Rail ◽  
Power Semiconductors ◽  
Power Semiconductor ◽  
Flexible Ac Transmission ◽  
High Speed Trains ◽  
Ac Transmission

High Speed Rail (HSR) is expanding rapidly in the whole world in this decade. Almost all the high-speed trains are fed by high-voltage AC and are equipped with several large motors. In addition, High-speed trains have a strict restriction for both mass and size. Thus, HSR needs power semiconductors that can handle high-voltage and giant current. In addition, EMC problems become larger in these days, thus higher speed of switching is expected. From simple silicon diodes in 1960s, thyristors, GTO thyristors, IGBTs and until new wide gap devices such like SiC, the progress of power semiconductor and cooling system directly pulls the performance of high-speed rolling stock. In some cases, fixed installations for HSR are equipped with flexible AC transmission systems (FACTS) such as static VAR compensators (SVC), also.

scholarly journals Electrocardiogram Standards for Children and Young Adults Using Z -Scores

2020 ◽  
Vol 13 (8) ◽  
Author(s):  
András Bratincsák ◽  
Chieko Kimata ◽  
Blair N. Limm-Chan ◽  
Kevin P. Vincent ◽  
Matthew R. Williams ◽  
...  
Keyword(s):  
Age Groups ◽  
High Volume ◽  
Qtc Interval ◽  
T Wave ◽  
New Concepts ◽  
Pr Interval ◽  
Z Scores ◽  
Qrs Duration ◽  
Children And Young Adults ◽  
Lower Limits

Background: Normative ECG values for children are based on relatively few subjects and are not standardized, resulting in interpersonal variability of interpretation. Recent advances in digital technology allow a more quantitative, reproducible assessment of ECG variables. Our objective was to create the foundation of normative ECG standards in the young utilizing Z -scores. Methods: One hundred two ECG variables were collected from a retrospective cohort of 27 085 study subjects with no known heart condition, ages 0 to 39 years. The cohort was divided into 16 age groups by sex. Median, interquartile range, and range were calculated for each variable adjusted to body surface area. Results: Normative standards were developed for all 102 ECG variables including heart rate; P, R, and T axis; R-T axis deviation; PR interval, QRS duration, QT, and QTc interval; P, Q, R, S, and T amplitudes in 12 leads; as well as QRS and T wave integrals. Incremental Z -score values between –2.5 and 2.5 were calculated to establish upper and lower limits of normal. Historical ECG interpretative concepts were reassessed and new concepts observed. Conclusions: Electronically acquired ECG values based on the largest pediatric and young adult cohort ever compiled provide the first detailed, standardized, quantitative foundation of traditional and novel ECG variables. Expression of ECG variables by Z -scores lends an objective and reproducible evaluation without interpreter bias that can lead to more confident establishment of ECG-disease correlations and improved automated ECG readings in high-volume cardiac screening efforts in the young. Graphic Abstract: A graphic abstract is available for this article.

scholarly journals Thermal Analysis of Power Semiconductor Device in Steady-State Conditions

Energies ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 103 ◽  
Author(s):  
Adrian Plesca
Keyword(s):  
Mathematical Model ◽  
Steady State ◽  
Semiconductor Device ◽  
Experimental Tests ◽  
Junction Temperature ◽  
Inductive Load ◽  
Power Semiconductors ◽  
Power Semiconductor ◽  
Air Speed ◽  
Good Concordance

Electronic devices can be damaged in an undesirable manner if the junction temperature achieves high values in order to cause thermal runaway and melting. This paper describes the mathematical model to calculate the power losses in power semiconductor devices used in bidirectional rectifier which supplies a resistive-inductive load. The obtained thermal model can be used to analyse the thermal behaviour of power semiconductors in steady-state conditions, at different values of the firing angle, direct current, air speed in the case of forced cooling, and different types of load. Also, the junction and case temperature of a power thyristor have been computed. In order to validate the proposed mathematical model, some experimental tests have been performed. The theoretical values are in good concordance with the experimental data and simulated results.

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