Next Generation High Dk, Low Df Organic Laminate for RF Modules and High Frequency Applications

2010 ◽  
Vol 2010 (1) ◽  
pp. 000836-000841
Author(s):  
Fuhan Liu ◽  
Vivek Sridharan ◽  
Tapobrata Bandyopadhyay ◽  
Venky Sundaram ◽  
Rao Tummala ◽  
...  

In this paper, we present a novel high density high performance ultra-thin organic laminate, X-R-1, with low cost standard PCB fabrication processes for RF and high frequency applications. The X-R-1 substrate, developed at Zeon Corporation is a new generation halogen-free high dielectric constant (Dk) and low loss tangent (Df) dielectric laminate material. Its dielectric constant is 6.5–6.7 in the range of 1–20GHz, similar to typical LTCC substrates but larger than most organic materials such as LCP, PTFE and Epoxy based materials. Its dielectric loss tangent is 0.003, similar to that of LTCC, LCP and PTFE but much lower than epoxy based materials. The thicknesses of the core used in this study are 50um. The clad copper on both sides is a 12um thick profile-free copper foil which provides extremely smooth surface. Microminiaturization of RF devices can be achieved by the combination of high Dk and ultra-thin substrate. The combination of low Df and smooth surface leads to RF and high frequency signals having minimum propagation loss. The material is suitable for mechanical and laser through hole drilling and fully compatible with the low cost standard PCB facilities and processes. Because of the smooth surface, 25um very fine copper lines and spaces were achieved by wet etching process. Copper filled through holes with 40um diameter drilled by CO2 laser have been demonstrated. Panel size of 6″×6″ test vehicles with RF filters and transmission lines was fabricated and measured. Test data on the filters at 2.4GHz and 5GHz has been presented in this paper. This high Dk and low Df laminate with standard PCB processes provides a low cost organic platform for RF and high frequency circuit applications.

2014 ◽  
Vol 2 (29) ◽  
pp. 11144-11154 ◽  
Author(s):  
Ming Tian ◽  
Qin Ma ◽  
Xiaolin Li ◽  
Liqun Zhang ◽  
Toshio Nishi ◽  
...  

A novel dielectric composite with high dielectric constant (k), low dielectric loss, low elastic modulus and large actuated strain at a low electric field was prepared by a simple, low-cost and efficient method.


1986 ◽  
Vol 72 ◽  
Author(s):  
M. Kahn ◽  
B. Kriese

AbstractFugitive ink and tape technology permit the inclusion of flat voids at predetermined locations in ceramic microcircuit substrates. Calculations show that critical stray capacitances can be reduced by as much as 65% and the propagation delay of microstrip transmission lines by 30% and more. The selectivity of the void location permits the retention of the full thermal conductance of the substrate under heat dissipating elements.


2017 ◽  
Vol 43 (4) ◽  
pp. 3923-3926 ◽  
Author(s):  
Muhammad Nauman Khan ◽  
Nadeem Jelani ◽  
Chunchun Li ◽  
Jibran Khaliq

2012 ◽  
Vol 16 (1) ◽  
pp. 79-83 ◽  
Author(s):  
Ranjit Kumar ◽  
M. Zulfequar ◽  
V. N. Singh ◽  
Sukhvir Singh ◽  
T. D. Senguttuvan

2013 ◽  
Vol 802 ◽  
pp. 134-138 ◽  
Author(s):  
Worawut Makcharoen

The CaCu3Ti4O12(CCTO) has the advantage for the various applications especially for capacitive elements in microelectronic devices over the ferroelectric materials including BaTiO3. CCTO is a ceramic compound with a high dielectric constant but it has a high loss tangent at room temperature. In this work, the Influences of PtO2doping on the dielectric properties of CaCu3Ti4O12(CCTO) ceramics were investigate. The ceramics CCTO and PtO2doping CCTO were studied by X- ray diffraction, scanning electron microscopy. The dielectric properties have been measured as a function of temperature and frequency range 0.1 - 500 kHz. The XRD shows the CCTO structure does not changes after doping with platinum. The results show that PtO2doped can reduce the mean grain sizes of CCTO, but the dielectric constant still remained a height. The samples of 2.0 mol% Pt-doped have exhibited high dielectric constant of about 22,000 and the loss tangent about 0.7 at room temperature and frequency at 10 kHz. The reduced of the loss tangent could be interpreted with the internal barrier layer capacitor model (IBLC)


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