A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT and Series Diode

2015 ◽  
Vol 2015 (1) ◽  
pp. 000359-000364 ◽  
Author(s):  
Adam Morgan ◽  
Ankan De ◽  
Haotao Ke ◽  
Xin Zhao ◽  
Kasunaidu Vechalapu ◽  
...  
Keyword(s):  
High Voltage ◽  
Thermal Stresses ◽  
Wide Bandgap ◽  
Power Module ◽  
Cost Performance ◽  
Power Semiconductor ◽  
Current Switch ◽  
Power Modules ◽  
Voltage Stress ◽  
3D Printed

The main motivation of this work is to design, fabricate, test, and compare an alternative, robust packaging approach for a power semiconductor current switch. Packaging a high voltage power semiconductor current switch into a single power module, compared to using separate power modules, offers cost, performance, and reliability advantages. With the advent of Wide-Bandgap (WBG) semiconductors, such as Silicon-Carbide, singular power electronic devices, where a device is denoted as a single transistor or rectifier unit on a chip, can now operate beyond 10kV–15kV levels and switch at frequencies within the kHz range. The improved voltage blocking capability reduces the number of series connected devices within the circuit, but challenges power module designers to create packages capable of managing the electrical, mechanical, and thermal stresses produced during operation. The non-sinusoidal nature of this stress punctuated with extremely fast changes in voltage and current, with respect to time, leads to non-ideal electrical and thermal performance. An optimized power semiconductor series current switch is fabricated using an IGBT (6500V/25A die) and SiC JBS Diode (6000V/10A), packaged into a 3D printed housing, to create a composite series current switch package (CSCSP). The final chosen device configuration was simulated and verified in an ANSYS software package. Also, the thermal behavior of such a composite package was simulated and verified using COMSOL. The simulated results were then compared with empirically obtained data, in order to ensure that the thermal ratings of the power devices were not exceeded; directly affecting the maximum attainable frequency of operation for the CSCSP. Both power semiconductor series current switch designs are tested and characterized under hard switching conditions. Special attention is given to ensure the voltage stress across the devices is significantly reduced.

scholarly journals Liquid-Cooled Heat Sink Optimization for Thermal Imbalance Mitigation in Wide-Bandgap Power Modules

2021 ◽  
Author(s):  
Raj Sahu ◽  
Emre Gurpinar ◽  
Burak Ozpineci
Keyword(s):  
Thermal Loading ◽  
Cooling System ◽  
Wide Bandgap ◽  
Heat Sinks ◽  
Power Module ◽  
Power Semiconductor ◽  
Power Modules ◽  
Significant Temperature ◽  
Thermal Imbalance ◽  
Heat Spreading

Abstract Power semiconductor die placement on substrates used in high-power modules is generally optimized to minimize electrical parasitic (e.g., stray inductance, common-mode capacitance), taking into account the minimum spacing between semiconductor dies for thermal decoupling. The layout assumes sufficient heat spreading and transfer from dies to the cooling structure. Insulated metal substrate-based power module designs may lead to asymmetrical thermal resistance across the dies, which may cause significant temperature differences among the devices. Such unintentional thermal asymmetries can lead to over sizing the cooling system design or under-using the semiconductor power processing capability. This article proposes a thermal imbalance mitigation method that uses evolutionary optimized liquid-cooled heat sinks to improve the thermal loading among devices.

Wide Bandgap Semiconductor Power Devices

1997 ◽  
Vol 483 ◽  
Author(s):  
T. P. Chow ◽  
N. Ramungul ◽  
M. Ghezzo
Keyword(s):  
High Voltage ◽  
Wide Bandgap ◽  
Power Device ◽  
Experimental Demonstration ◽  
Power Devices ◽  
Process Technology ◽  
Power Semiconductor ◽  
Wide Bandgap Semiconductor ◽  
Simulated Performance ◽  
Device Structures

AbstractThe present status of high-voltage power semiconductor switching devices is reviewed. The choice and design of device structures are presented. The simulated performance of the key devices in 4H-SiC is described. The progress in high-voltage power device experimental demonstration is described. The material and process technology issues that need to be addressed for device commercialization are discussed.

A High Current (>1500A) Power Module for High Temperature, High Performance Applications Using SiC TMOS Power Switches

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000402-000406
Author(s):  
B. Passmore ◽  
J. Hornberger ◽  
B. McPherson ◽  
J. Bourne ◽  
R. Shaw ◽  
...  
Keyword(s):  
High Temperature ◽  
High Performance ◽  
Extreme Environment ◽  
Wide Bandgap ◽  
Power Module ◽  
Power Modules ◽  
Power Switches ◽  
Bandgap Semiconductors ◽  
Transition Times ◽  
Switch Position

A high temperature, high performance power module was developed for extreme environment systems and applications to exploit the advantages of wide bandgap semiconductors. These power modules are rated > 1200V, > 100A, > 250 °C, and are designed to house any SiC or GaN device. Characterization data of this power module housing trench MOSFETs is presented which demonstrates an on-state current of 1500 A for a full-bridge switch position. In addition, switching waveforms are presented that exhibit fast transition times.

scholarly journals Effects of Frequency and Temperature on Electric Field Mitigation Method via Protruding Substrate Combined with Applying Nonlinear FDC Layer in Wide Bandgap Power Modules

Energies ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 2022 ◽  
Author(s):  
Maryam Mesgarpour Tousi ◽  
Mona Ghassemi
Keyword(s):  
Electrical Conductivity ◽  
Electric Field ◽  
Metal Layer ◽  
Wide Bandgap ◽  
High Density ◽  
Field Calculation ◽  
Power Module ◽  
Temperature Dependent ◽  
Ac Electrical Conductivity ◽  
Power Modules

Our previous studies showed that geometrical techniques including (1) metal layer offset, (2) stacked substrate design and (3) protruding substrate, either individually or combined, cannot solve high electric field issues in high voltage high-density wide bandgap (WBG) power modules. Then, for the first time, we showed that a combination of the aforementioned geometrical methods and the application of a nonlinear field-dependent conductivity (FDC) layer could address the issue. Simulations were done under a 50 Hz sinusoidal AC voltage per IEC 61287-1. However, in practice, the insulation materials of the envisaged WBG power modules will be under square wave voltage pulses with a frequency of up to a few tens of kHz and temperatures up to a few hundred degrees. The relative permittivity and electrical conductivity of aluminum nitride (AlN) ceramic, silicone gel, and nonlinear FDC materials that were assumed to be constant in our previous studies, may be frequency- and temperature-dependent, and their dependency should be considered in the model. This is the case for other papers dealing with electric field calculation within power electronics modules, where the permittivity and AC electrical conductivity of the encapsulant and ceramic substrate materials are assumed at room temperature and for a 50 or 60 Hz AC sinusoidal voltage. Thus, the big question that remains unanswered is whether or not electric field simulations are valid for high temperature and high-frequency conditions. In this paper, this technical gap is addressed where a frequency- and temperature-dependent finite element method (FEM) model of the insulation system envisaged for a 6.5 kV high-density WBG power module will be developed in COMSOL Multiphysics, where a protruding substrate combined with the application of a nonlinear FDC layer is considered to address the high field issue. By using this model, the influence of frequency and temperature on the effectiveness of the proposed electric field reduction method is studied.

A High Performance Power Module with >10kV capability to Characterize and Test In Situ SiC Devices at >200°C Ambient

2016 ◽  
Vol 2016 (HiTEC) ◽  
pp. 000149-000158
Author(s):  
Xin Zhao ◽  
Haotao Ke ◽  
Yifan Jiang ◽  
Adam Morgan ◽  
Yang Xu ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
High Performance ◽  
Power Module ◽  
Module Design ◽  
Power Modules ◽  
Operational Temperature ◽  
Full Power ◽  
Temperature Applications

Abstract This paper presents design, fabrication and characterization details of a 10kV power module package for >200°C ambient temperature applications. Electrical simulations were performed to confirm the module design, and that the electric field distribution throughout the module did not exceed dielectric capabilities of components and materials. A suitable copper etching process was demonstrated for DBC layout, and a high melting point Sn/Pb/Ag solder reflow process was developed for device and component attachment. To monitor the operational temperature of the module, a thermistor was integrated onto the substrate. A new silicone gel, having a working temperature up to 210°C, was evaluated and selected for encapsulation and, of great importance, for passivation of high voltage (10kV) SiC dies. An additive manufacturing ‘Design Process’ was developed and applied to printing the housings, molds, and test fixtures. Also, cleaning processes were evaluated for every step in the fabrication process. To verify performance of the modules, mechanical dies were mounted on the substrates, and a high temperature testing setup built to characterize the modules at high temperature. Measurements indicated that the module can operate up to 12kV within 25°C to 225°C, with less than 0.1 μA leakage current. The packaging was used for full-power characterization of developmental 10kV SiC diodes, and proved that the power module packaging satisfied all requirements for high voltage and high temperature applications. This work successfully validated the processes for creating high voltage (>10 kV) and high temperature (>200°C) power modules.

Comparative Study on Power Module Architectures for Modularity and Scalability

2020 ◽  
Vol 142 (4) ◽  
Author(s):  
Mei-Chien Lu
Keyword(s):  
Power Electronics ◽  
Hybrid Electric Vehicle ◽  
Wide Bandgap ◽  
Department Of Energy ◽  
Power Module ◽  
Current Trends ◽  
Power Modules ◽  
Bandgap Semiconductors ◽  
Sustainability Challenges

Abstract Silicon carbide (SiC) wide bandgap power electronics are being applied in hybrid electric vehicle (HEV) and electrical vehicles (EV). The Department of Energy (DOE) has set target performance goals for 2025 to promote EV and HEV as a means of carbon emission reduction and long-term sustainability. Challenges include higher expectations on power density, performance, efficiency, thermal management, compactness, cost, and reliability. This study will benchmark state of the art silicon and SiC technologies. Power modules used in commercial traction inverters are analyzed for their within-package first-level interconnect methods, module architecture, and integration with cooling structure. A few power module package architectures from both industry-adopted standards and proposed patented technologies are compared in modularity and scalability for integration into inverters. The current trends of power module architectures and their integration into inverter are also discussed. The development of an eco-system to support the wide bandgap semiconductors-based power electronics is highlighted as an ongoing challenge.

Warpage Evaluation of High-Temperature Sandwich-Structured Power Module for SiC Power Semiconductor Devices

2015 ◽  
Vol 12 (3) ◽  
pp. 153-160 ◽  
Author(s):  
Takeshi Anzai ◽  
Yoshinori Murakami ◽  
Shinji Sato ◽  
Hidekazu Tanisawa ◽  
Kohei Hiyama ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Cycle ◽  
Coefficient Of Thermal Expansion ◽  
Fabrication Process ◽  
Power Module ◽  
Ceramic Substrates ◽  
Soldering Temperature ◽  
Power Semiconductor ◽  
Power Modules ◽  
High Temperature Operation

This article presents a sandwich-structured SiC power module that can be operated at 225°C. The proposed power module has two ceramic substrates that are made of different materials (Si3N4 and Al2O3). The SiC devices are sandwiched between these ceramic substrates. The module also has a baseplate soldered onto the ceramic substrate. Conventional power modules use baseplate materials with a large coefficient of thermal expansion (CTE), for example, Cu (17–18 ppm/°C and Al (23–24 ppm/°C). In the fabrication process, the soldering temperature reaches 450°C because Au-Ge eutectic solder is used. A problem was found in the fabrication process of the module because of the high soldering temperature and CTE mismatches of the components. Furthermore, for high-temperature operation, a thermal cycle of −40°C to 250°C will be needed to ensure reliability and it is important to decrease the warpage of the module during the thermal cycle. By using stainless steel (CTE: 10 ppm/°C) for the baseplate, the warp-age measured at room temperature was reduced to one-third that of a module using a Cu baseplate. Further, the warpage displacement from 50°C to 250°C was also reduced.

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