Schottky Barriers on Layered Anisotropic Semiconductor – WSe&lt;sub&gt;2&lt;/sub&gt; – with 1000 &#197; Indium Metal Thickness

ABSTRACTSilicide/SiGe Schottky barriers are of importance for applications in infrared detectors and SiGe contacts, as well as for fundamental studies of metal-semiconductor interfaces. We have fabricated silicide/SiGe Schottky diodes by the reaction of evaporated Pt and Ir films on p-SiGe alloys with a thin Si capping layer. The onset of metal-SiGe reactions was controlled by the deposited metal thickness. The Schottky barrier heights were determined from internal photoemission. Pt-SiGe and Ir-SiGe reacted diodes have barrier heights that are higher than the corresponding silicide/p-Si diodes. PtSi/Si/SiGe diodes, on the other hand, have lower “barrier heights” that decrease with increasing Ge concentration. The smaller barrier heights in such silicide/Si/SiGe diodes are due to tunneling through the unconsumed Si layer. Equations are derived accounting for this tunneling contribution, and lead to an extracted “barrier height” that is the Si barrier height reduced by the Si/SiGe band offset. Highly bias-tunable barrier heights are obtained (e.g. 0.30 eV to 0.12 eV) by allowing the SiGe/Si band offset to extend higher in energy than the Schottky barrier, leading to a cut-off-wavelength-tunable silicide/SiGe/Si Schottky diode infrared detector.

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Growth of near noble metal Pd and Pt thin film silicides morphology and structure

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100112464 ◽

1984 ◽

Vol 42 ◽

pp. 498-499

Author(s):

E. I. Alessandrini ◽

M. O. Aboelfotoh

Keyword(s):

Noble Metals ◽

Annealing Temperature ◽

Chemical Compounds ◽

Barrier Properties ◽

Solid State Reactions ◽

Transmission Electron ◽

Stable Chemical ◽

Metal Thickness ◽

Amorphous Si ◽

Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

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Resonant tunneling through traps in Schottky barriers

Journal de Physique ◽

10.1051/jphys:0197700380110144300 ◽

1977 ◽

Vol 38 (11) ◽

pp. 1443-1448 ◽

Cited By ~ 11

Author(s):

G. Sarrabayrouse ◽

J. Buxo ◽

D. Esteve

Keyword(s):

Resonant Tunneling ◽

Schottky Barriers

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Contacting Diffusion with FIB for Backside Circuit Edit—Procedures and Material Analysis

ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2005p0064 ◽

2005 ◽

Author(s):

U. Kerst ◽

P. Sadewater ◽

R. Schlangen ◽

C. Boit ◽

R. Leihkauf ◽

...

Keyword(s):

Numerical Simulation ◽

Electrical Properties ◽

Process Parameters ◽

Thermal Effects ◽

Silicon Surface ◽

Ohmic Contacts ◽

Ion Beam ◽

Schottky Barriers ◽

Material Analysis ◽

Type Silicon

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.

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Investigation of Schottky Barriers

10.21236/ada204355 ◽

1988 ◽

Author(s):

Mark VAN Schilfgaarde

Keyword(s):

Schottky Barriers

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Investigation of Schottky Barriers

10.21236/ada218422 ◽

1989 ◽

Author(s):

Mark Van Schilfgaarde

Keyword(s):

Schottky Barriers

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Scientific and technological bases for creation of cold-resistant steel with a guaranteed yield strength of 315–750 MPa for the Arctic. Part 2. Technology of production, structure and properties of sheet hire performance

Voprosy Materialovedeniya ◽

10.22349/1994-6716-2018-96-4-14-41 ◽

2019 ◽

pp. 14-41

Author(s):

O. V. Sych

Keyword(s):

Yield Strength ◽

Thermomechanical Processing ◽

The Arctic ◽

Accelerated Cooling ◽

Low Alloy Steels ◽

Hot Plastic Deformation ◽

Metal Thickness ◽

Alloy Steels ◽

Technology Of Production ◽

Technological Methods

On the basis of the conducted research, a complex of scientific and technological methods has been developed for various technological processes (thermomechanical processing with accelerated cooling, quenching from rolling and separate furnace heating with high-temperature tempering). The developed method provides the formation of the structure of acceptable heterogeneity and anisotropy according to different morphological and crystallographic parameters throughout the thickness of rolled products up to 100 mm from low alloy steels with a yield strength of at least 315–460 MPa and up to 60 mm from economically alloyed steels with a yield strength of at least 500–750 MPa. The paper presents results of the industrial implementation of hot plastic deformation and heat treatment schemes for the production of cold rolled steel sheet with yield strength of at least 315–750 MPa for the Arctic. The structure of sheet metal thickness is given, providing guaranteed characteristics of strength, ductility, cold resistance, weldability and crack resistance.

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