Synthesis and Quality of Cr-doped AIN Thin Films Grown by RF Sputtering

PZT thin film was fabricated by using RF-sputtering process, and platinum was used as bottom electrodes. The sputtering gases were Ar：O2＝25：0 sccm, Ar：O2＝20：5 sccm, or Ar：O2＝15：10 sccm. After sputtering, the PZT film was annealed for 5 minutes under O2 gas environment and at the temperature of 600 0C, 650 0C, 700 0C or 750 0C. To judge the quality of the deposited PZT film, its physical properties and electric properties were evaluated. The results indicate that the best crystallization temperature of PZT thin film is about 700 0C. Also, the roughness of the PZT thin film becomes larger with the increasing of annealing temperature. By adding more oxygen in the sputtering gas, one could have better crystallization of the PZT film. As for the electrical properties, the leakage current of PZT thin film increases with the increasing of annealing temperature. Furthermore, the ferroelectric property is affected by the crystallization amount of perovskite, the thickness of PZT thin film, and the diffusion situation between the bottom electrode and the PZT film.

Download Full-text

Growth of Highly C-Axis Oriented AlN Films at Water Cooling Condition

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.718-720.20 ◽

2013 ◽

Vol 718-720 ◽

pp. 20-24

Author(s):

J. Yang ◽

X.Q. Jiao ◽

R. Zhang ◽

H. Zhong ◽

Y. Shi ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Rf Sputtering ◽

Cooling Condition ◽

Water Cooling ◽

X Ray Diffraction ◽

Axis Orientation ◽

Aln Film ◽

Influence Of Water

In this work, the aluminum nitride (AlN) thin film with highly c-axis orientation was prepared successfully at water cooling condition by RF sputtering. The influence of water cooling on the crystalline quality of AlN thin film is researched. The crystalline characteristics and microstructure of AlN thin films deposited on Si (111) and Mo/Si (111) were researched by X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM). The results indicated that highly c-axis AlN films can be synthetized at water cooling condition. The AlN film deposited on Mo thin film is titled to the surface, when that is perpendicular to the silicon substrate. Different models are proposed to explain the growth behaviors of AlN thin films on the two kinds of substrates.

Download Full-text

Optimization of Zinc Oxide Thin Films for Silicon Surface Acoustic Wave Resonator Applications

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.518-523.3772 ◽

2012 ◽

Vol 518-523 ◽

pp. 3772-3779 ◽

Cited By ~ 2

Author(s):

Fatini Sidek ◽

Anis Nurashikin Nordin ◽

Raihan Othman

Keyword(s):

Thin Film ◽

Thin Films ◽

Zinc Oxide ◽

Integrated Circuit ◽

High Performance ◽

Rf Sputtering ◽

Zno Thin Film ◽

Taguchi Optimization ◽

Saw Resonators

High quality ZnO thin films are required to produce CMOS SAW resonators operating with low losses and high Q. This work intends to develop high performance CMOS SAW resonators through optimization of both the quality of the ZnO and the design of the SAW resonator. Zinc oxide was chosen for this work as the piezoelectric material due to its superior acoustic propagation properties and compatibility with integrated circuit fabrication techniques. ZnO has demonstrated good performance characteristics for a variety of piezoelectric devices. For optimization of the quality of the deposited ZnO thin film, different RF-sputtering conditions will be used to investigate which condition produces the best piezoelectric quality of the ZnO thin film. The experiments were carried using Taguchi optimization method, which studies a large number of variables with a small number of experiments.

Download Full-text

Preparation of Yba2Cu3O7-X. Superconducting Thin Films by Means of Single Target Rf-Sputtering+

MRS Proceedings ◽

10.1557/proc-169-647 ◽

1989 ◽

Vol 169 ◽

Author(s):

Herman D.L. Weyten ◽

R. De Batist ◽

P. Nagels ◽

J. Cornelis

Keyword(s):

Thin Films ◽

Rf Sputtering ◽

Buffer Layers ◽

Superconducting Thin Films ◽

High Tc ◽

Resistivity Measurements ◽

Single Target ◽

Deposited Films ◽

Post Deposition

AbstractHigh Tc superconducting thin films have been deposited on sapphire by means of RF‐sputtering from a single stoichiometric target of YBa2Cu3O7‐x composition. The YBa2Cu3O7‐x films were deposited in an argon‐oxygen atmosphere on a substrate which reached a temperature of s 400°C during deposition. The study of stoichiometry and homogeneity of the as‐deposited films, by means of electromicroprobe analysis (EMPA), was used to optimize the sputtering parameters of the system. To achieve superconductivity, with an onset of s 90 K, a high‐temperature, post‐deposition thermal treatment in oxygen was necessary. Resistivity measurements show that, with respect to the bulk samples, zero resistivity is lowered as a result of substrate interaction. The use of buffer layers can improve the quality of the superconducting thin films.

Download Full-text