Optimization of Zinc Oxide Thin Films for Silicon Surface Acoustic Wave Resonator Applications

2012 ◽  
Vol 518-523 ◽  
pp. 3772-3779 ◽  
Author(s):  
Fatini Sidek ◽  
Anis Nurashikin Nordin ◽  
Raihan Othman
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Integrated Circuit ◽  
High Performance ◽  
Rf Sputtering ◽  
Zno Thin Film ◽  
Taguchi Optimization ◽  
Saw Resonators

High quality ZnO thin films are required to produce CMOS SAW resonators operating with low losses and high Q. This work intends to develop high performance CMOS SAW resonators through optimization of both the quality of the ZnO and the design of the SAW resonator. Zinc oxide was chosen for this work as the piezoelectric material due to its superior acoustic propagation properties and compatibility with integrated circuit fabrication techniques. ZnO has demonstrated good performance characteristics for a variety of piezoelectric devices. For optimization of the quality of the deposited ZnO thin film, different RF-sputtering conditions will be used to investigate which condition produces the best piezoelectric quality of the ZnO thin film. The experiments were carried using Taguchi optimization method, which studies a large number of variables with a small number of experiments.

Multifunctional zinc oxide thin films for high-performance UV photodetectors and nitrogen dioxide gas sensors

RSC Advances ◽  
2016 ◽  
Vol 6 (31) ◽  
pp. 25641-25650 ◽  
Author(s):  
S. K. Shaikh ◽  
V. V. Ganbavle ◽  
S. I. Inamdar ◽  
K. Y. Rajpure
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Nitrogen Dioxide ◽  
Gas Sensor ◽  
Gas Sensors ◽  
High Performance ◽  
Zno Thin Film ◽  
Uv Photodetector ◽  
Uv Photodetectors

Multifunctional use of ZnO thin film as NO2 gas sensor and UV photodetector.

Stability Studies on Optical and Structure Properties of Zinc Oxide Thin Films Exposed to Different Environment

2013 ◽  
Vol 667 ◽  
pp. 549-552
Author(s):  
A.S.M. Rodzi ◽  
Mohamad Hafiz Mamat ◽  
M.N. Berhan ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Absorption Coefficient ◽  
Near Infrared ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Zno Films ◽  
Zno Thin Film ◽  
Oxide Thin Films

The properties of zinc oxide thin films were prepared by sol-gel spin-coating method have been presented. This study based on optical and electrical properties of ZnO thin film. The effects of annealing temperatures that exposed with two environments properties have been investigated. Environments exposed in room (27°C) and hot (80°C) temperatures which are stored by various days. Solution preparation, thin film deposition and characterization process were involved in this project. The ZnO films were characterized using UV-Vis-NIR spectrophotometer for optical properties. From that equipment, the percentage of transmittance (%) and absorption coefficient spectra were obtained. With two environments showed have different absorption coefficient are reveal and all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties. From SEM investigations the surface morphology of ZnO thin film shows the particles size become smaller and denser in hot temperatures while in room temperatures have porosity between particles.

PZT Thin Films Deposited by RF Magnetron Sputtering

2013 ◽  
Vol 302 ◽  
pp. 8-13
Author(s):  
Shun Fa Hwang ◽  
Wen Bin Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Pzt Thin Film

PZT thin film was fabricated by using RF-sputtering process, and platinum was used as bottom electrodes. The sputtering gases were Ar：O2＝25：0 sccm, Ar：O2＝20：5 sccm, or Ar：O2＝15：10 sccm. After sputtering, the PZT film was annealed for 5 minutes under O2 gas environment and at the temperature of 600 0C, 650 0C, 700 0C or 750 0C. To judge the quality of the deposited PZT film, its physical properties and electric properties were evaluated. The results indicate that the best crystallization temperature of PZT thin film is about 700 0C. Also, the roughness of the PZT thin film becomes larger with the increasing of annealing temperature. By adding more oxygen in the sputtering gas, one could have better crystallization of the PZT film. As for the electrical properties, the leakage current of PZT thin film increases with the increasing of annealing temperature. Furthermore, the ferroelectric property is affected by the crystallization amount of perovskite, the thickness of PZT thin film, and the diffusion situation between the bottom electrode and the PZT film.

Growth of Highly C-Axis Oriented AlN Films at Water Cooling Condition

2013 ◽  
Vol 718-720 ◽  
pp. 20-24
Author(s):  
J. Yang ◽  
X.Q. Jiao ◽  
R. Zhang ◽  
H. Zhong ◽  
Y. Shi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Rf Sputtering ◽  
Cooling Condition ◽  
Water Cooling ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Aln Film ◽  
Influence Of Water

In this work, the aluminum nitride (AlN) thin film with highly c-axis orientation was prepared successfully at water cooling condition by RF sputtering. The influence of water cooling on the crystalline quality of AlN thin film is researched. The crystalline characteristics and microstructure of AlN thin films deposited on Si (111) and Mo/Si (111) were researched by X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM). The results indicated that highly c-axis AlN films can be synthetized at water cooling condition. The AlN film deposited on Mo thin film is titled to the surface, when that is perpendicular to the silicon substrate. Different models are proposed to explain the growth behaviors of AlN thin films on the two kinds of substrates.

Silver Doped Zinc Oxide Thin Film Production by Thermionic Vacuum Arc (TVA) Technique

2021 ◽  
Vol 43 (3) ◽  
pp. 253-253
Author(s):  
Mehmet zkan Mehmet zkan ◽  
Sercen Sadik Erdem Sercen Sadik Erdem
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Band Gap ◽  
Glass Substrate ◽  
Zno Thin Films ◽  
Vacuum Arc ◽  
Zno Thin Film ◽  
Doped Zno ◽  
Thermionic Vacuum Arc

In this paper, silver (Ag)doped Zinc Oxide(ZnO) thin films were prepared on glass and silicon substrate by using a thermionic vacuum arc technique. The surface, structural, optical characteristics of silver doped thin films have been examined by X-Ray diffractometer (XRD), field emission scanning emission electron microscopy (FESEM), atomic force microscopy (AFM), and UV-Visible spectrophotometer. As a result of these measurements, Ag, Zn and ZnO reflection planes were determined for thin films formed on Si and glass substrate. Nano crystallites have emerged in FESEM and AFM images. The produced films have low transparency. The optical band gap values were measured by photoluminescence devices at room temperature for thin films produced on silicon and glass substrate. The band gap values are very close to 3.10 eV for Ag doped ZnO thin films. The band gap of un-doped ZnO thin film is approximately 3.3 eV. It was identified that Ag doped changes the properties of the ZnO thin film.

scholarly journals Effect of Halogen Doping on Optical Properties for ZnO Thin Film Prepared by Thermal Oxidation

2015 ◽  
Vol 61 ◽  
pp. 149-161
Author(s):  
Wael Abdullah
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Thermal Oxidation ◽  
Zinc Acetate Dihydrate ◽  
Precursor Solution ◽  
Zno Thin Film ◽  
Oxide Thin Films ◽  
Glass Substrates

Undoped and halogen-doped zinc oxide thin films are prepared by the thermal oxidation process. Zinc acetate dihydrate, ethanol, and Diethanolamine are used as precursor, solvent, and stabilizer, respectively. In the case of ZnO:Hal. dopant Ammonium chloride NH4Cl 99%, Benzene Bromide C6H5Br, or Benzene Iodide C6H5I for making dopant ZnO thin film with Cl, Br, I respectively is added to the precursor solution with an atomic percentage equal to 2-10.% hal. The transparent solution sprayed onto glass substrates, and are transformed into ZnO upon annealing at 500°C. XRD spectra of ZnO thin films, and optical properties of them as a function of halogen content have been investigated using U.V spectroscopy ( transmittance , refractive index, extinction coefficient and energy band gap ) for undoped and halogen-doped zinc oxide thin films.

Electrical Properties Dependence on Substrate Temperature of Sputtered ZnO Nanoparticles Thin Films on Teflon Substrates

2013 ◽  
Vol 795 ◽  
pp. 403-406 ◽  
Author(s):  
Nur Sa’adah Muhamad Sauki ◽  
Sukreen Hana Herman ◽  
Mohd Hanafi Ani ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage

Zinc oxide (ZnO) thin films were deposited on teflon substrates by RF magnetron sputtering at different substrate temperature. The effect of substrate temperature on ZnO thin films electrical and structural properties were examined using current-voltage (I-V) measurement, and x-ray diffraction (XRD) It was found that the electrical conductivity and resistivity of the ZnO thin film deposited at 40°C was the highest and lowest intensity accordingly. This was supported by the crystalline quality of the films from the x-ray diffraction (XRD) results. The XRD pattern showed that the ZnO thin film deposited at 40°C has the highest intensity with the narrowest full-width-at-half-maximum indicating that the film has the highest quality compared to other thin film.

Influence of RF Power in the Growth of Aluminium Zinc Oxide (AZO) Thin Films by RF Sputtering

2014 ◽  
Vol 925 ◽  
pp. 295-299 ◽  
Author(s):  
Mohammed Mannir Aliyu ◽  
Muhammed Aminul Islam ◽  
Qamar Huda ◽  
Sajedur Rahman ◽  
Nowshad Amin
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Transparent Conducting Oxide ◽  
Rf Sputtering ◽  
Hall Effect Measurement ◽  
Film Material ◽  
Rf Power ◽  
Smart Windows ◽  
Measurement Tools

Aluminium doped zinc oxide (AZO) is fast becoming an important thin film material for applications as transparent conducting oxide (TCO) in several thin film solar cells, smart windows and many devices using touch screen displays. This is due to its good electrical and optical characteristics as well as lower cost and good abundance. Although sputtering is the general method for industrial fabrication of this material, but film characteristics depend strongly on fabrication processes. Thus, optimal films are obtained by optimization of the deposition conditions. In this work, we investigated the effects of RF deposition power on AZO thin films. Samples of similar thicknesses were grown under similar conditions in an RF sputtering chamber at different RF powers. The samples were then characterized using FESEM, AFM, UV-Vis, XRD and Hall effect measurement tools. Results indicate that the surface morphology is slightly affected with larger grain sizes obtained at higher RF powers. Also the surface roughness, average transmittance, conductivity and deposition rate all increase with the RF power. The lowest as-deposited resistivity of 15.3x10-3 Ω/cm was obtained, at the highest RF power of 100 W. This film also have the highest values of carrier concentration, mobility and figure of merit of 4.24x1020 cm-3, 0.96 cm2/V and 0.27x10-3 Ω respectively. This work highlights the significance of RF power in the fabrication of good quality AZO thin films.

Optical Properties of Nanostructured Aluminum Doped Zinc Oxide (ZnO) Thin Film for Thin Film Transistor (TFT) Application

2013 ◽  
Vol 667 ◽  
pp. 511-515 ◽  
Author(s):  
N.D. Md Sin ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Doping Concentration ◽  
Near Infrared ◽  
Thin Film Transistor ◽  
Zno Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Doped Zno

The properties of nanostructured aluminum (Al) doped zinc oxide (ZnO) thin film for thin film transistors (TFT) are presented. This research has been focused on optical and structural properties of Al doped ZnO thin film. The influence of Al doping concentration at 0~5 at.% on the Al doped ZnO thin film properties have been investigated. The thin films were characterized using UV-Vis-NIR spectrophotometer for optical properties. The surface morphology has been characterized using field emission scanning electron microscope (FESEM). The absorption coefficient spectra obtained from UV-Vis-NIR spectrophotometer measurement show all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties. The calculated Urbach energy indicated the defects concentrations in the thin films increase with doping concentrations The FESEM investigations shows that the nanoparticles size becomes smaller and denser as the doping concentration increase.

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