scholarly journals The Analysis of Degradation Characteristics in Poly-Silicon Thin film Transistor Formed by Solid Phase Crystallization

2003 ◽  
Vol 16 (1) ◽  
pp. 26-32
Keyword(s):  
Thin Film ◽  
Solid Phase ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Solid Phase Crystallization ◽  
Poly Silicon

Device Characteristics of a Poly-Silicon Thin Film Transistor Fabricated by Milc at Low Temperature

1996 ◽  
Vol 424 ◽  
Author(s):  
Seok-Woon Lee ◽  
Byung-IL Lee ◽  
Tae-Hyung Ihn ◽  
Tae-Kyung Kim ◽  
Young-Tae Kang ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Solid Phase ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Solid Phase Crystallization ◽  
Thin Nickel ◽  
One Step ◽  
Lateral Crystallization ◽  
Si Films

AbstractHigh performance poly-Si thin film transistors were fabricated by using a new crystallization method, Metal-Induced Lateral Crystallization (MILC). The process temperature was kept below 500°C throughout the fabrication. After the gate definition, thin nickel films were deposited on top of the TFT's without an additional mask, and with a one-step annealing at 500°C, the activation of the dopants in source/drain/gate a-Si films was achieved simultaneously with the crystallization of the a-Si films in the channel area. Even without a post-hydrogenation passivation, mobilities of the MILC TFT's were measured to be as high as 120cm2/Vs and 90cm2/Vs for n-channel and p-channel, respectively. These values are much higher than those of the poly-Si TFT's fabricated by conventional solid-phase crystallization at around 6001C.

Comparative analysis of advanced poly-silicon thin-film transistor architectures for drain field relief

2003 ◽  
Author(s):  
Guglielmo Fortunato ◽  
Antonio Valletta ◽  
Alessandra Bonfiglietti ◽  
Massimo Cuscuna ◽  
Paolo Gaucci ◽  
...  
Keyword(s):  
Thin Film ◽  
Comparative Analysis ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Poly Silicon ◽  
Drain Field

High-quality polycrystalline silicon thin film prepared by a solid phase crystallization method

1996 ◽  
Vol 198-200 ◽  
pp. 940-944 ◽  
Author(s):  
T. Matsuyama ◽  
N. Terada ◽  
T. Baba ◽  
T. Sawada ◽  
S. Tsuge ◽  
...  
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Silicon Thin Film ◽  
Solid Phase Crystallization ◽  
High Quality ◽  
Crystallization Method

Approximate analytical model for the poly-silicon thin film transistor

1990 ◽  
Vol 26 (16) ◽  
pp. 1284 ◽  
Author(s):  
M.J. Izzard ◽  
P. Migliorato ◽  
W.I. Milne
Keyword(s):  
Thin Film ◽  
Analytical Model ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Poly Silicon

Electrical Characteristics of Low-Temperature Poly-Silicon Thin-Film Transistor Using a Stacked Pr2O3/SiOxNy Gate Dielectric

2019 ◽  
Vol 13 (1) ◽  
pp. 151-155
Author(s):  
Tung-Ming Pan ◽  
Tin-Wei Wu ◽  
Ching-Lin Chan ◽  
Kai-Ming Chen ◽  
Chih-Hong Lee
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Electrical Characteristics ◽  
Silicon Thin Film ◽  
Poly Silicon
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