Design and Optimization of a Highly Sensitive and Linearity Piezoresistive Pressure Sensor Based on a Combination of Cross Beam-Peninsula-Membrane Structure

The sensitivity and linearity trade-off problem has become the hotly important issues in designing the piezoresistive pressure sensors. To solve these trade-off problems, this paper presents the design, optimization, fabrication, and experiment of a novel piezoresistive pressure sensor for micro pressure measurement based on a combined cross beam - membrane and peninsula (CBMP) structure diaphragm. Through using finite element method (FEM), the proposed sensor performances as well as comparisons with other sensor structures are simulated and analyzed. Compared with the cross beam-membrane (CBM) structure, the sensitivity of CBMP structure sensor is increased about 38.7 % and nonlinearity error is reduced nearly 8%. In comparison with the peninsula structure, the maximum non-linearity error of CBMP sensor is decreased about 40% and the maximum deflection is extremely reduced 73%. Besides, the proposed sensor fabrication is performed on the n-type single crystal silicon wafer. The experimental results of the fabricated sensor with CBMP membrane has a high sensitivity of 23.4 mV/kPa and a low non-linearity of −0.53% FSS in the pressure range 0–10 kPa at the room temperature. According to the excellent performance, the sensor can be applied to measure micro-pressure lower than 10 kPa.

Assembly and Testing of Surface Micromachined, Piezoresistive Polysilicon Pressure Sensors

10.1115/imece1999-0263 ◽

1999 ◽

Author(s):

Todd F. Miller ◽

David J. Monk ◽

Gary O’Brien ◽

William P. Eaton ◽

James H. Smith

Keyword(s):

Pressure Sensor ◽

Microelectromechanical Systems ◽

Pressure Sensors ◽

Single Crystal Silicon ◽

Surface Micromachining ◽

Process Technology ◽

Crystal Silicon ◽

Noise Characteristics ◽

Testing Techniques ◽

Abstract Surface micromachining is becoming increasingly popular for microelectromechanical systems (MEMS) and a new application for this process technology is pressure sensors. Uncompensated surface micromachined piezoresistive pressure sensors were fabricated by Sandia National Labs (SNL). Motorola packaged and tested the sensors over pressure, temperature and in a typical circuit application for noise characteristics. A brief overview of surface micromachining related to pressure sensors is described in the report along with the packaging and testing techniques used. The electrical data found is presented in a comparative manner between the surface micromachined SNL piezoresistive polysilicon pressure sensor and a bulk micromachined Motorola piezoresistive single crystal silicon pressure sensor.

Modeling and Simulation of the Thermal Drift Characteristics of the Piezoresistive Pressure Sensor

Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) ◽

10.4071/hitec-rotmani-tha24 ◽

2010 ◽

Vol 2010 (HITEC) ◽

pp. 000373-000378

Author(s):

R. Otmani ◽

N. Benmoussa ◽

K. Ghaffour

Keyword(s):

Thermal Behavior ◽

Modeling And Simulation ◽

Pressure Sensor ◽

Pressure Sensors ◽

High Sensitivity ◽

Thermal Drift ◽

Output Characteristics ◽

Piezoresistive pressure sensors based on Silicon have a large thermal drift because of their high sensitivity to temperature (ten times more sensitive to temperature than metals). So the study of the thermal behavior of these sensors is essential to define the parameters that cause the drift of the output characteristics. In this study, we adopted the behavior of 2nd degree gauges depending on the temperature. Then we model the thermal behavior of the sensor and its characteristics.

Nano Carbon Black-Based High Performance Wearable Pressure Sensors

Nanomaterials ◽

10.3390/nano10040664 ◽

2020 ◽

Vol 10 (4) ◽

pp. 664 ◽

Cited By ~ 2

Author(s):

Junsong Hu ◽

Junsheng Yu ◽

Ying Li ◽

Xiaoqing Liao ◽

Xingwu Yan ◽

...

Keyword(s):

Carbon Black ◽

Pressure Sensor ◽

High Performance ◽

Large Scale ◽

Pressure Sensors ◽

High Sensitivity ◽

Wearable Electronics ◽

Atmospheric Pollutant ◽

Nano Carbon

The reasonable design pattern of flexible pressure sensors with excellent performance and prominent features including high sensitivity and a relatively wide workable linear range has attracted significant attention owing to their potential application in the advanced wearable electronics and artificial intelligence fields. Herein, nano carbon black from kerosene soot, an atmospheric pollutant generated during the insufficient burning of hydrocarbon fuels, was utilized as the conductive material with a bottom interdigitated textile electrode screen printed using silver paste to construct a piezoresistive pressure sensor with prominent performance. Owing to the distinct loose porous structure, the lumpy surface roughness of the fabric electrodes, and the softness of polydimethylsiloxane, the piezoresistive pressure sensor exhibited superior detection performance, including high sensitivity (31.63 kPa−1 within the range of 0–2 kPa), a relatively large feasible range (0–15 kPa), a low detection limit (2.26 pa), and a rapid response time (15 ms). Thus, these sensors act as outstanding candidates for detecting the human physiological signal and large-scale limb movement, showing their broad range of application prospects in the advanced wearable electronics field.

Investigation of High Sensitivity Piezoresistive Pressure Sensors for -0.5…+0.5 kPa

10.21203/rs.3.rs-658941/v1 ◽

2021 ◽

Author(s):

Mikhail Basov ◽

Denis Prigodskiy

Keyword(s):

Pressure Sensor ◽

Thermal Hysteresis ◽

Pressure Sensors ◽

High Sensitivity ◽

Differential Pressure ◽

Sensor Chip ◽

Burst Pressure ◽

Average Sensitivity ◽

Optimum Geometry ◽

Abstract The investigation of the pressure sensor chip’s design developed for operation in ultralow differential pressure ranges has been conducted. The optimum geometry of a membrane has been defined using available technological resources. The pressure sensor chip with an area of 6.15х6.15 mm has an average sensitivity S of 34.5 mV/кPa/V at nonlinearity 2KNL = 0.81 %FS and thermal hysteresis up to 0.6 %FS was created. Owing to the chip connection with stop elements, the burst pressure reaches 450 кPa.

Investigation of High Sensitivity Piezoresistive Pressure Sensors for -0.5…+0.5 kPa

10.31219/osf.io/bxkng ◽

2021 ◽

Author(s):

Mikhail ◽

Denis Prigodskiy

Keyword(s):

Automotive Industry ◽

Pressure Sensor ◽

Thermal Hysteresis ◽

Pressure Sensors ◽

High Sensitivity ◽

Burst Pressure ◽

Average Sensitivity ◽

Optimum Geometry ◽

Developed Pressure ◽

The investigation of the pressure sensor chip's design developed for operation in ultralow differential pressure ranges has been conducted. The optimum geometry of a diaphragm has been defined using available technological resources. The pressure sensor chip with an area of 6.15 × 6.15 mm has an average sensitivity S of 34.5 mV/ κPa/V at nonlinearity 2K NL = 0.81 %FS and thermal hysteresis up to 0.6 %FS was created. Owing to the chip connection with stop elements, the burst pressure reaches 450 κPa. The developed pressure sensor can be used in medicine, automotive industry and highly specialized scientific developments.

Flexible and Highly Sensitive Piezoresistive Pressure Sensor with Sandpaper as a Mold

NANO ◽

10.1142/s1793292019500814 ◽

2019 ◽

Vol 14 (07) ◽

pp. 1950081 ◽

Cited By ~ 1

Author(s):

Wendan Jia ◽

Qiang Zhang ◽

Yongqiang Cheng ◽

Dong Zhao ◽

Yan Liu ◽

...

Keyword(s):

Pressure Sensor ◽

Mass Production ◽

Silver Nanowires ◽

Low Cost ◽

Pressure Sensors ◽

High Sensitivity ◽

Device Structure ◽

Simple Method ◽

Flexible Pressure Sensors

Flexible pressure sensors based on piezoresistive induction have recently become a research hotspot due to the simple device structure, low energy consumption, easy readout mechanism and excellent performance. For practical applications, flexible pressure sensors with both high sensitivity and low-cost mass production are highly desirable. Herein, this paper presents a high-sensitivity piezoresistive pressure sensor based on a micro-structured elastic electrode, which is low cost and can be mass-produced by a simple method of sandpaper molding. The micro-structure of the electrode surface under external pressure causes a change in the effective contact area and the distance between the electrodes, which exhibits great pressure sensitivity. The test results show that the surface structure is twice as sensitive as the planar structure under low pressure conditions. This is because of the special morphology of silver nanowires (AgNWs), which exhibits the tip of nanostructures on the surface and realizes the quantum tunneling mechanism. The sensor has high sensitivity for transmitting signals in real time and it can also be used to detect various contact actions. The low cost mass production and high sensitivity of flexible pressure sensors pave the way for electronic skin, wearable healthcare monitors and contact inspection applications.

FEM Simulation of a Twin-Island Structure Chip in Piezoresistive Pressure Sensor

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.464.208 ◽

2011 ◽

Vol 464 ◽

pp. 208-212

Author(s):

Hai Bin Pan ◽

Jian Ning Ding ◽

Guang Gui Cheng ◽

Hui Juan Fan

Keyword(s):

Finite Element ◽

Pressure Sensor ◽

Pressure Sensors ◽

Fem Simulation ◽

Sensor Chip ◽

Stress Distributions ◽

Island Structure ◽

Mems Technology ◽

In this paper a twin-island structure in piezoresistive pressure sensor based on MEMS technology has been presented, and a finite element mechanical model has been developed to simulate the static mechanical behavior of this twin-island structure sensor chip, especially the stress distributions in diaphragm of the sensor chip, which has a vital significance on piezoresistive pressure sensors’ sensitivity. The possible impacts of twin-island’s location and twin-island’s width on the stress distributions, as well as the maximum value of compressive stress and tensile stress, have been investigated based on numerical simulation with Finite Element Method (FEM). The simulation results show that twin-island’s location has great effect on the stress distributions in sensor chips’ diaphragms and the sensitivity of piezoresistive pressure sensors, compared with the twin-island’s width.

Investigation of High Sensitivity Piezoresistive Pressure Sensors for -0.5…+0.5 kPa

10.36227/techrxiv.14891646 ◽

2021 ◽

Author(s):

Mikhail Basov ◽

Denis Prigodskiy

Keyword(s):

Pressure Sensor ◽

Thermal Hysteresis ◽

Pressure Sensors ◽

High Sensitivity ◽

Differential Pressure ◽

Sensor Chip ◽

Burst Pressure ◽

Average Sensitivity ◽

Optimum Geometry ◽

The investigation of the pressure sensor chip’s design developed for operation in ultralow differential pressure ranges has been conducted. The optimum geometry of a membrane has been defined using available technological resources. The pressure sensor chip with an area of 6.15х6.15 mm has an average sensitivity S of 34.5 mV/кPa/V at nonlinearity 2K<sub>NL</sub> = 0.81 %FS and thermal hysteresis up to 0.6 %FS was created. Owing to the chip connection with stop elements, the burst pressure reaches 450 кPa.

SIMULATION METHODS OF PIEZORESISTIVE PRESSURE SENSORS IN ORDER TO IMPROVE CONSISTENCY

Modern Physics Letters B ◽

10.1142/s0217984913500115 ◽

2012 ◽

Vol 27 (02) ◽

pp. 1350011 ◽

Cited By ~ 1

Author(s):

ZHAOHUA ZHANG ◽

TIANLING REN ◽

RUIRUI HAN ◽

LI YUAN ◽

BO PANG

Keyword(s):

Pressure Sensor ◽

Pressure Sensors ◽

Simulation Method ◽

Test Results ◽

Silicon Membrane ◽

Element Analysis ◽

Consistency Results ◽

Good Consistency ◽

It is important to realize good consistency among different device units on a big wafer. The bad product consistency results from the processing deviation which is hard to control. A novel simulation method to control and reduce the influence of processing deviation on the sensitivity of a piezoresistive pressure sensor is provided in this paper. Based on finite element analysis (FEA) and mathematical integration, the performance of the pressure sensors is simulated. The pressure sensors are designed and fabricated according to the simulation results. The test results confirm that this simulation method can help to design the pressure sensor very precisely. From the simulation and test results, we find that properly enlarging the size of the square silicon membrane can improve the devices consistency.

Design, Fabrication and Characterization of Ultra Miniature Piezoresistive Pressure Sensors for Medical Implants

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.254.94 ◽

2011 ◽

Vol 254 ◽

pp. 94-98 ◽

Cited By ~ 2

Author(s):

Li Shiah Lim ◽

Woo Tae Park ◽

Liang Lou ◽

Han Hua Feng ◽

Pushpapraj Singh

Keyword(s):

Pressure Sensor ◽

Biomedical Applications ◽

Low Cost ◽

Silicon Nanowire ◽

Pressure Sensors ◽

High Sensitivity ◽

Medical Implants ◽

Mems Technology ◽

Pressure sensors using MEMS technology have been advanced due to their low cost, small size and high sensitivity, which is an advantage for biomedical applications. In this paper,silicon nanowire was proposed to be used as the piezoresistors due to the high sensitivity [1][2].The sensors were designed, and characterized for the use of medical devices for pressure monitoring. The pressure sensor size is 2mm x 2mm with embedded SiNWs of 90nm x150nm been fabricated. Additionally, the sensitivity of 0.0024 Pa-1 pressure sensor has been demonstrated.