scholarly journals A Strategic Review on Growth of InP on Silicon Substrate for Applications in High Frequency RF Devices

2012 ◽  
pp. 51-56
Author(s):  
Umesh.P. Gomes ◽  
Mr. Kuldeep ◽  
S. Rathi ◽  
Dhrubes Biswas
Keyword(s):  
High Frequency ◽  
Lattice Mismatch ◽  
Low Cost ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
Superior Performance ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Strategic Review ◽  
Rf Devices

A review is presented on the advances in InAlAs/InGaAs High Electron Mobility transistors (HEMT) on silicon substrates for high frequency and low noise applications. Although InAlAs/InGaAs HEMTs on InP and GaAs substrates have been much appreciated due to their superior performance, their widespread applications have been hindered due to higher cost of the substrates. Silicon has been used as an alternative substrate considering the benefits of low cost, technological maturity and integration of III-V and silicon technology inspite of the constraints like lattice mismatch and large difference in thermal expansion coefficient.

Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic Substrate

2011 ◽  
Vol 50 (9R) ◽  
pp. 096503 ◽  
Author(s):  
Chin-Te Wang ◽  
Chien-I Kuo ◽  
Heng-Tung Hsu ◽  
Edward Yi Chang ◽  
Li-Han Hsu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Flip Chip ◽  
Low Cost ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
Organic Substrate ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Flip Chip Packaging

Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic Substrate

2011 ◽  
Vol 50 (9) ◽  
pp. 096503 ◽  
Author(s):  
Chin-Te Wang ◽  
Chien-I Kuo ◽  
Heng-Tung Hsu ◽  
Edward Yi Chang ◽  
Li-Han Hsu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Flip Chip ◽  
Low Cost ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
Organic Substrate ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Flip Chip Packaging

scholarly journals Pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors with Super Low Noise Performances of 0.41 dB at 18 GHz

ETRI Journal ◽  
1996 ◽  
Vol 18 (3) ◽  
pp. 171-179 ◽  
Author(s):  
Jin-Hee Lee Lee ◽  
Hyung-Sup Yoon Yoon ◽  
Byung-Sun Park Park ◽  
Chul Soon Park Park ◽  
Sang-Soo Choi Choi ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Millimeter-wave low-noise high electron mobility transistors

1985 ◽  
Vol 6 (10) ◽  
pp. 531-533 ◽  
Author(s):  
P.C. Chao ◽  
S.C. Palmateer ◽  
P.M. Smith ◽  
U.K. Mishra ◽  
K.H.G. Duh ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

AlGaN Channel HEMT with Extremely High Breakdown Voltage

2011 ◽  
Vol 1324 ◽  
Author(s):  
Takuma Nanjo ◽  
Misaichi Takeuchi ◽  
Akifumi Imai ◽  
Yousuke Suzuki ◽  
Muneyoshi Suita ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
High Electron ◽  
Field Plate ◽  
Electron Mobility Transistors ◽  
Doping Technique ◽  
Resistive Source

ABSTRACTA channel layer substitution of a wider bandgap AlGaN for a conventional GaN in high electron mobility transistors (HEMTs) is an effective method of enhancing the breakdown voltage. Wider bandgap AlGaN, however, should also increase the ohmic contact resistance. Si ion implantation doping technique was utilized to achieve sufficiently low resistive source/drain contacts. The fabricated AlGaN channel HEMTs with the field plate structure demonstrated good pinch-off operation with sufficiently high drain current density of 0.5 A/mm without noticeable current collapse. The obtained maximum breakdown voltages was 1700 V in the AlGaN channel HEMT with the gate-drain distance of 10 μm. These remarkable results indicate that AlGaN channel HEMTs could become future strong candidates for not only high-frequency devices such as low noise amplifiers but also high-power devices such as switching applications.

High-Frequency AlGaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Organic Chemical Vapor Deposition

2015 ◽  
Vol 32 (11) ◽  
pp. 118501
Author(s):  
Hong-Yu Guo ◽  
Yuan-Jie Lv ◽  
Guo-Dong Gu ◽  
Shao-Bo Dun ◽  
Yu-Long Fang ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
High Frequency ◽  
Ohmic Contacts ◽  
Chemical Vapor ◽  
High Electron Mobility Transistors ◽  
Organic Chemical ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field

AIP Advances ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 085004 ◽  
Author(s):  
Isabel Harrysson Rodrigues ◽  
David Niepce ◽  
Arsalan Pourkabirian ◽  
Giuseppe Moschetti ◽  
Joel Schleeh ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Angular Dependence ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy

1999 ◽  
Vol 75 (23) ◽  
pp. 3653-3655 ◽  
Author(s):  
M. J. Murphy ◽  
K. Chu ◽  
H. Wu ◽  
W. Yeo ◽  
W. J. Schaff ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Mobility ◽  
High Frequency ◽  
Molecular Beam ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

High gain monolithic W-band low noise amplifiers based on pseudomorphic high electron mobility transistors

1994 ◽  
Vol 42 (12) ◽  
pp. 2590-2597 ◽  
Author(s):  
Der-Wei Tu ◽  
S.W. Duncan ◽  
A. Eskandarian ◽  
B. Golja ◽  
B.C. Kane ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
W Band
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