scholarly journals An Improved P-Type Doped Barrier Surface AlGaN/GaN High Electron Mobility Transistor with High Power-Added Efficiency

Micromachines ◽  
2021 ◽  
Vol 12 (9) ◽  
pp. 1035
Author(s):  
Hujun Jia ◽  
Xiaowei Wang ◽  
Mengyu Dong ◽  
Shunwei Zhu ◽  
Yintang Yang
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
Major Change ◽  
High Electron Mobility Transistor ◽  
High Energy ◽  
High Electron ◽  
High Electron Mobility ◽  
Power Added Efficiency ◽  
Barrier Surface ◽  
P Type

An improved P-type doped barrier surface AlGaN/GaN high electron mobility transistor with high power-added efficiency (PDBS-HEMT) is proposed in this paper. Through the modelling and simulation of ISE-TCAD and ADS software, the influence of the P-type doped region on the performance parameters is studied, and the power-added efficiency (PAE) obtained and effectively improved is further verified. The drain saturation current and the threshold voltage of PDBS-HEMT has no major change compared with the traditional structure; the peak transconductance decreases slightly, but the breakdown voltage is significantly enhanced. Furthermore, the gate-source capacitance and gate-drain capacitance are reduced by 14.6% and 14.3%, respectively. By simulating the RF output characteristics of the device, the maximum oscillation frequency of the proposed structure is increased from 57 GHz to 63 GHz, and the saturated output power density is 10.9 W/mm, 9.3 W/mm and 6.4 W/mm at the frequency of 600 MHz, 1200 MHz and 2400 MHz, respectively. The highest PAE of 88.4% was obtained at 1200 MHz. The results show that the PDBS structure has an excellent power and efficiency output capability. Through the design of the P-type doped region, the DC and RF parameters and efficiency of the device are balanced, demonstrating the great potential of PDBS structure in high energy efficiency applications.

High-power AlGaN∕GaN dual-gate high electron mobility transistor mixers on SiC substrates

2004 ◽  
Vol 40 (12) ◽  
pp. 775 ◽  
Author(s):  
K. Shiojima ◽  
T. Makimura ◽  
T. Kosugi ◽  
S. Sugitani ◽  
N. Shigekawa ◽  
...  
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Dual Gate

scholarly journals A modeling and performance of the triple field plate HEMT

2019 ◽  
Vol 10 (1) ◽  
pp. 398
Author(s):  
Kourdi Zakarya ◽  
Abdelkhader Hamdoun
Keyword(s):  
Aluminum Oxide ◽  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Field Plate ◽  
Field Peak ◽  
And Performance ◽  
Multiple Field

We present this work by two steps. In the first one, the new structure proposed of the FP-HEMTs device (Field plate High Electron Mobility Transistor) with a T-gate on an 4H-SIC substrate to optimize these electrical performances, multiple field-plates were used with aluminum oxide to split the single electric field peak into several smaller peaks, and as passivation works to reduce scaling leakage current. In the next, we include a modeling of a simulation in the Tcad-Silvaco Software for realizing the study of the influence of negative voltage applied to gate T-shaped in OFF state time and high power with ambient temperature, the performance differences between the 3FP and the SFP devices are discussed in detail.

scholarly journals Self heating Effects in GaN High Electron Mobility Transistor for Different Passivation Material

2020 ◽  
Vol 70 (5) ◽  
pp. 511-514
Author(s):  
Subhash Chander ◽  
Partap Singh ◽  
Samuder Gupta ◽  
D. S. Rawal ◽  
Mridula Gupta
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Self Heating ◽  
Channel Temperature ◽  
Passivation Layers ◽  
Different Temperatures ◽  
Output Characteristics

In this paper effect of self-heating has been studied of AlGaN/GaN high electron mobility transistor (HEMT) for different passivation layers which is promising device for high power at high frequencies. The different passivation layers used are aluminium oxide (Al2O3), silicon nitride (SiN) and silicon dioxide (SiO2). The device GaN HEMT has been simulated and characterised for its thermal behaviour by the distribution of lattice temperature inside the device using device simulation tool ATLAS from SILVACO. The transfer and output characteristics with and without self-heating has been studied for electrical characterisation. The channel temperature for different passivation observed is 448 K, 456 K and 471 K forAl2O3, SiN and SiO2 respectively. The observed different temperatures are due to difference in their thermal conductivity. This channel temperature information is critical to study the reliability of the device at high power levels.

scholarly journals High power microwave damage mechanism on high electron mobility transistor

2016 ◽  
Vol 65 (16) ◽  
pp. 168501
Author(s):  
Li Zhi-Peng ◽  
Li Jing ◽  
Sun Jing ◽  
Liu Yang ◽  
Fang Jin-Yong
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Damage Mechanism ◽  
High Electron ◽  
High Electron Mobility ◽  
High Power Microwave ◽  
Power Microwave

Fabrication and characterization of AlGaN/GaN HEMTs with high power gain and efficiency at 8 GHz

2021 ◽  
Vol 42 (12) ◽  
pp. 122802
Author(s):  
Quan Wang ◽  
Changxi Chen ◽  
Wei Li ◽  
Yanbin Qin ◽  
Lijuan Jiang ◽  
...  
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Power Gain ◽  
High Electron Mobility ◽  
Power Added Efficiency ◽  
Electron Mobility Transistors ◽  
Dimensional Electron Gas

Abstract State-of-the-art AlGaN/GaN high electron mobility structures were grown on semi-insulating 4H-SiC substrates by MOCVD and X-band microwave power high electron mobility transistors were fabricated and characterized. Hall mobility of 2291.1 cm2/(V·s) and two-dimensional electron gas density of 9.954 × 1012 cm–2 were achieved at 300 K. The HEMT devices with a 0.45-μm gate length exhibited maximum drain current density as high as 1039.6 mA/mm and peak extrinsic transconductance of 229.7 mS/mm. The f T of 30.89 GHz and f max of 38.71 GHz were measured on the device. Load-pull measurements were performed and analyzed under (–3.5, 28) V, (–3.5, 34) V and (–3.5, 40) V gate/drain direct current bias in class-AB, respectively. The uncooled device showed high linear power gain of 17.04 dB and high power-added efficiency of 50.56% at 8 GHz when drain biased at (–3.5, 28) V. In addition, when drain biased at (–3.5, 40) V, the device exhibited a saturation output power density up to 6.21 W/mm at 8 GHz, with a power gain of 11.94 dB and a power-added efficiency of 39.56%. Furthermore, the low f max/f T ratio and the variation of the power sweep of the device at 8 GHz with drain bias voltage were analyzed.

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