Advanced architecture ofCdHgTe photodiode for detection of weak infrared radiation

2021 ◽  
pp. 52-59
Keyword(s):  
Space Charge Region ◽  
Infrared Radiation ◽  
Dark Current ◽  
Surface Recombination ◽  
Correct Choice ◽  
Cutoff Wavelength ◽  
Absorption Region ◽  
Wide Gap ◽  
Dark Currents ◽  
Layer Composition

The dark currents of CdHgTe photodiodes based on the advanced architecture, which isused inthreshold FPAfordetection ofweak infrared radiation,have been analyzed. Theopposite conductivity regions areformedof in wide-gap layers, thatreducesthe contribution of theSRHgeneration-recombination currents of to the total dark current.By using various compositions layers with transition sublayers reducing surface recombination at the interfaces, one canre-duce the surface mechanismcontributionto the total dark current of the photodiode. Finally, due to the correct choice of the absorption layer composition and wide-gap layer parameters, dark current in the space charge region ismuch lower than аdiffusion currentcausing by Auger mechanismin the absorption region for a given cutoff wavelength.

Dark currents of unipolar barrier structures based on mercury cadmium telluride for long-wave inred detectors

2021 ◽  
pp. 3-8
Author(s):  
A.V. Voitsekhovskii ◽  
◽  
S.N. Nesmelov ◽  
S.M. Dzyadukh ◽  
S.A. Dvoretsky ◽  
...  
Keyword(s):  
Cadmium Telluride ◽  
Leakage Current ◽  
Current Density ◽  
Dark Current ◽  
Mercury Cadmium Telluride ◽  
Current Component ◽  
Long Wave ◽  
Dark Currents ◽  
Surface Leakage ◽  
Long Wave Infrared

Two types of long-wave infrared nBn structures based on mercury cadmium telluride grown by molecular beam epitaxy on GaAs (013) substrates have been fabricated. For each type of device, the side walls of the mesa structures were passivated with an Al2O3 dielectric film or left without passivation. The CdTe content in the absorbing layers was 0.20 and 0.21, and in the barrier layers, 0.61 and 0.63. The dark currents of the manufactured devices were studied in a wide range of voltages and temperatures. The values of the surface leakage component are found under various conditions. It has been shown that the surface leakage current density decreases upon passivation with an Al2O3 film. It was found that at room temperature in the fabricated nBn structures with reverse biases, the surface leakage component dominates, and with forward biases, the dark current is determined by the combined effect of the surface leakage component and the bulk current component. From the Arrhenius plots, the values of the activation energies of the surface leakage current component were found, which at small reverse biases are in the range from 0.05 to 0.10 eV. At small reverse biases, upon cooling the samples, the role of the bulk component of the dark current increases, which at 180 K is approximately 0.81 A/cm2. In the temperature range 200-300 K, the values of the dark current density exceed the values calculated according to the empirical Rule07 model by a factor of 10-100, which indicates the possibility of creating long-wave infrared barrier detectors with a decrease in the values of the surface leakage component.

Solar-Blind AlGaN-based Schottky Photodiodes With High Detectivity and Low Noise

2002 ◽  
Vol 743 ◽  
Author(s):  
Necmi Biyikli ◽  
Orhan Aytur ◽  
Ibrahim Kimukin ◽  
Turgut Tut ◽  
Ekmel Ozbay
Keyword(s):  
Power Density ◽  
Dark Current ◽  
Reverse Bias ◽  
Low Noise ◽  
Noise Power ◽  
Cutoff Wavelength ◽  
Solar Blind ◽  
Fabrication And Characterization ◽  
Noise Power Density

AbstractWe report on the design, fabrication and characterization of solar-blind Schottky photodiodes with high detectivity and low noise. The devices were fabricated on n-/n+ AlGaN/GaN hetero-structures using a microwave compatible fabrication process. Using Al0.38Ga0.62N absorption layer, true solar-blind operation with a cutoff wavelength of ∼274 nm was achieved. The solar-blind detectors exhibited < 400 fA dark current in the 0–25 V reverse bias regime, and a maximum responsivity of 89 mA/W around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6×1012 cmHz1/2/W, and the detector noise was 1/f limited with a noise power density less than 3×10−29 A2/Hz at 10 KHz.

Solar-Blind Photodetector with Lower Dark Current and Higher Ilight/Idark Ratio Based on Mg0.38Zn0.62O Film Deposited by Pulsed Laser Deposition Method

2021 ◽  
Vol 21 (3) ◽  
pp. 1703-1710
Author(s):  
Pei-Jiang Cao ◽  
Qing Wang ◽  
Ch. N. Rao ◽  
Shun Han ◽  
Wang-Ying Xu ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Dark Current ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Cubic Phase ◽  
Cutoff Wavelength ◽  
Deposition Method ◽  
Solar Blind ◽  
Key Features ◽  
Quartz Substrates

In this study, pulsed laser deposition method (PLD) was employed to grow MgxZn1-xO films on quartz substrates. The optimal deposition temperature of 300 °C for MgxZn1-xO film was decided and Mg0.38Zn0.62O, Mg0.56Zn0.44O and Mg0.69Zn0.31O films were grown respectively using MgxZn1-xO targets with different Mg contents (x = 0.3, 0.5 and 0.7). As-deposited Mg0.38Zn0.62O film possessed the mixed-phase (hexagonal and cubic phase) structure, appropriate band gap of 4.68 eV and smaller surface roughness of 1.72 nm, and the solar-blind photodetector (PD) based on it was fabricated. The key features of our PD are the cutoff wavelength of 265 nm lying in solar-blind band, lower dark current (Idark) of 88 pA, higher peak responsivity of 0.10 A/W and bigger Ilight/Idark ratio of 1688, which provide the new idea for the application of solar-blind PDs based on MgxZn1-xO films.

unneling effects in InAs/GaInSb superlattice infrared photodiodes

1997 ◽  
Vol 484 ◽  
Author(s):  
U. Weimar ◽  
F. Fuchs ◽  
E. Ahlswede ◽  
J. Schmitz ◽  
W. Pletschen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetic Fields ◽  
Electric Field ◽  
Dark Current ◽  
Reverse Bias ◽  
Cutoff Wavelength ◽  
Optical And Electrical Properties ◽  
Interband Tunneling ◽  
Infrared Photodiodes ◽  
Device Properties

AbstractThe optical and electrical properties of InAs/GaInSb superlattice mesa photodiodes with a cutoff wavelength around 8 pim are investigated. The influence of the surface potential at the mesa sidewalls on the device properties was studied by fabricating gate-controlled diodes. At least two mechanisms determining the dark current in the reverse bias region can be identified. At high reverse biases bulk bandto- band tunneling dominates while the current at low reverse biases is most likely governed by surface effects. Bulk interband tunneling is further investigated by applying magnetic fields B up to 7 T parallel and perpendicular to the electric field E across the p-n junction.

scholarly journals Влияние условий формирования геттера в высокоомном кремнии на характеристики PIN-фотодиодов

2020 ◽  
Vol 46 (21) ◽  
pp. 11
Author(s):  
И.Б. Чистохин ◽  
К.Б. Фрицлер
Keyword(s):  
Ion Implantation ◽  
Dark Current ◽  
Carrier Lifetime ◽  
High Resistivity ◽  
Phosphorus Doping ◽  
Polysilicon Film ◽  
Pin Photodiode ◽  
Current Value ◽  
Dark Currents ◽  
High Resistivity Silicon

The influence of gettering conditions in high resistivity silicon during the PIN photodiode fabrication process on the reverse dark currents has been studied. It was demonstrated that the getter formation of backside substrate by a combination of phosphorus ion implantation and deposition of polysilicon film followed by phosphorus doping at the temperatures below 900 0C results in reduction of reverse dark current value and increasing of nonequilibrium carrier lifetime.

Luminescence of quasi-2DEG in heterostructures based on PbS films

2001 ◽  
Vol 692 ◽  
Author(s):  
G. Khlyap
Keyword(s):  
Space Charge ◽  
Zinc Selenide ◽  
Space Charge Region ◽  
Lead Sulfide ◽  
Electron System ◽  
Charge Carriers ◽  
Band Diagram ◽  
Equilibrium Charge ◽  
Wide Gap ◽  
Non Equilibrium

AbstractThe paper deals with the problem of luminescence due to non-equilibrium charge carriers transfer between the quasi-2D electron system localized in the space-charge region of the heterostructures based on lead sulfide films (up to 3 μm thickness) and zinc selenide substrates surrounded by the wide gap semiconductor region. The processes of electro- and photoluminescence are studied, the band diagram is proposed and the main parameters of the structure PbS/quasi-2DEG/ZnSe are calculated.

Ion-Implanted Germanium Far-Infrared Photodetectors

1992 ◽  
Vol 261 ◽  
Author(s):  
I. C. Wua ◽  
E. E. Hailer
Keyword(s):  
Far Infrared ◽  
Impurity Band ◽  
High Energy ◽  
Device Performance ◽  
Cutoff Wavelength ◽  
Applied Bias ◽  
Potential Applications ◽  
Photo Response ◽  
Shallow Acceptors ◽  
Dark Currents

ABSTRACTGermanium Blocked Impurity-Band (BIB) detectors, which have potential applications for space-born far infrared astrophysics observations, have been fabricated by means of boron ion implantation on high-purity Ge substrates. These devices are sensitive beyond the cutoff wavelength of Ge photoconductors doped with shallow acceptors. The extended cutoff wavelength increases with applied bias and can reach up to 200μm at very low dark currents of less than 100 electrons/sec. In order to enhance the photo-response, high-energy (3MeV) implantation has been used to form a thicker infrared-active layer. The influence of both ion-implant energies and post-implant anneals on the performance of detectors will be presented. Generation of excess donors in the boron implanted region has been observed. Their origin and effect of device performance will be discussed.

Dark Current Reduction in Near Infrared P-I-N Detector Diodes Fabricated from In.75Ga.25As Grown by Molecular Beam Epitaxy on InP Substrates

1996 ◽  
Vol 450 ◽  
Author(s):  
M. Micovic ◽  
W. Z. Cai ◽  
Y. Ren ◽  
J. Neal ◽  
S. F. Nelson ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Current Density ◽  
Dark Current ◽  
Molecular Beam ◽  
Reverse Bias ◽  
Attractive Alternative ◽  
Cutoff Wavelength ◽  
Dark Current Density ◽  
Inp Substrates ◽  
Reference Samples

ABSTRACTWe have investigated several approaches to improve the material quality of lattice-mismatched In.75Ga.25As grown by Molecular Beam Epitaxy (MBE) on (100) InP substrates. They include linear grading of In composition from lattice matched In.53Ga.47As to In.75Ga.25As in a 1 μm buffer layer grown at reduced substrate temperature, in combination with various in situ annealing and material regrowth steps. The material was used for fabrication of mesa-structure p-i-n photodetectors with 2.2 μm cutoff wavelength. The room temperature dark current density at 1 V reverse bias was approximately 2 mA/cm2 in all structures that were subjected to anneal and regrowth process, a factor of three improvement over reference samples which were not subjected to annealing and regrowth. The dark current density at 15 V reverse bias (10 mA/cm2 for the best devices) was at least two orders of magnitude lower in all annealed samples than in reference samples. These results suggest that the MBE grown material can be an attractive alternative to the vapor phase epitaxy (VPE) grown material which is commonly used for fabrication of these detectors.

scholarly journals Frog rod outer segments with attached inner segment ellipsoids as an in vitro model for photoreceptors on the retina.

1985 ◽  
Vol 85 (1) ◽  
pp. 83-105 ◽  
Author(s):  
M S Biernbaum ◽  
M D Bownds
Keyword(s):  
Dark Current ◽  
In Vitro Model ◽  
Receptor Cell ◽  
Light Sensitivity ◽  
Rod Outer Segments ◽  
Outer Segments ◽  
Vitro Model ◽  
Dark Currents ◽  
External Calcium

Purified suspensions of frog rod outer segments still attached to the mitochondria-rich inner segment portion of the receptor cell (OS-IS) can be obtained in quantities (0.1 mg/retina) sufficient for chemical analysis. In oxygenated glucose-bicarbonate Ringer's medium with added Percoll, they display normal dark currents, light sensitivity, and photocurrent kinetics for several hours. Two millimolar cytoplasmic levels of ATP and GTP are maintained, fivefold higher than in isolated OS. The levels are not altered by abolition of the dark current with ouabain. Nucleoside triphosphates are more effectively buffered than in isolated OS, and their levels remain constant during changes in external calcium levels. 32Pi is incorporated into endogenous ATP and GTP pools twice as efficiently as in isolated OS, and is used in the phosphorylation of rhodopsin. OS-IS take up and release 45Ca++ by Na+-, Ca++-, and IBMX-sensitive mechanisms. Illumination causes release of 45Ca++, which confirms retinal studies by other groups using Ca++-sensitive electrodes. Thus, OS-IS suspensions model the behavior of photoreceptors still attached to the living retina. Their availability permits the simultaneous assay and correlation of electrophysiological and chemical changes occurring during excitation and adaptation.

InAs-QDIP hybrid broadband infrared photodetector

MRS Advances ◽  
2016 ◽  
Vol 1 (48) ◽  
pp. 3301-3306
Author(s):  
Chee H. Tan ◽  
Ian C. Sandall ◽  
Xinxin Zhou ◽  
Sanjay Krishna
Keyword(s):  
Quantum Dot ◽  
Dark Current ◽  
Spectral Response ◽  
Bonding Process ◽  
Cutoff Wavelength ◽  
Infrared Photodetector ◽  
Infrared Photodiode

ABSTRACTWe demonstrated that an InAs photodiode and a Quantum Dot Infrared Photodiode can be bonded to produce a hybrid broadband infrared photodetector. When cooled to 77 K the InAs photodiode can be used to detect wavelengths from visible to a cutoff wavelength of 3 μm while the Quantum Dot Infrared Photodiode detects wavelengths from 3 to 12 μm. The dark current and spectral response were measured on reference devices and bonded devices. Both sets of devices show similar dark current and spectral response, suggesting that no significant degradation of the devices after the bonding process.

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