scholarly journals Silicon Photomultiplier Sensor Interface Based on a Discrete Second Generation Voltage Conveyor

Sensors ◽  
2020 ◽  
Vol 20 (7) ◽  
pp. 2042
Author(s):  
Vincenzo Stornelli ◽  
Leonardo Pantoli ◽  
Gianluca Barile ◽  
Alfiero Leoni ◽  
Emanuele D’Amico
Keyword(s):  
Integrated Circuits ◽  
Second Generation ◽  
Supply Voltage ◽  
Discrete Elements ◽  
Silicon Photomultiplier ◽  
Silicon Photomultipliers ◽  
Sensor Interface ◽  
Reduced Dimensions ◽  
Complete Circuit ◽  
Very High

This work presents the design of a discrete second-generation voltage conveyor (VCII) and its capability to be used as electronic interface for silicon photomultipliers. The design addressed here exploits directly at the transistor level, with commercial components, the proposed interface; the obtained performance is valuable considering both the discrete elements and the application. The architecture adopted here realizes a transimpedance amplifier that is also able to drive very high input impedance, as usually requested by photons detection. Schematic and circuital design of the discrete second-generation voltage conveyor is presented and discussed. The complete circuit interface requires a bias current of 20 mA with a dual 5V supply voltage; it has a useful bandwidth of about 106 MHz, and considering also the reduced dimensions, it is a good candidate to be used in portable applications without the need of high-cost dedicated integrated circuits.

scholarly journals A Novel Electronic Interface for Micromachined Si-Based Photomultipliers

Micromachines ◽  
2018 ◽  
Vol 9 (10) ◽  
pp. 507 ◽  
Author(s):  
Leonardo Pantoli ◽  
Gianluca Barile ◽  
Alfiero Leoni ◽  
Mirco Muttillo ◽  
Vincenzo Stornelli
Keyword(s):  
Second Generation ◽  
Active Element ◽  
Transimpedance Amplifier ◽  
Current Conveyors ◽  
Discrete Elements ◽  
Silicon Photomultipliers ◽  
Internal Feedback ◽  
Hybrid Solution ◽  
Simulation Results ◽  
Electronic Interface

In this manuscript, the authors propose a novel interface for silicon photomultipliers based on a second-generation voltage conveyor as an active element, performing as a transimpedance amplifier. Due to the absence of internal feedback, this solution offers a static bandwidth regardless of the tunable gain level. The simulation results have shown good performances, confirming the possibility of the proposed interface being effectively used in different scenarios. A preliminary hybrid solution has also been developed using second-generation current conveyors and measurements conducted on an equivalent discrete-elements board, which is promising.

scholarly journals Investigation of the spectral characteristics of silicon photomultiplier tubes

2021 ◽  
Vol 9 (2) ◽  
pp. 164-171
Keyword(s):  
Spectral Sensitivity ◽  
Optical Radiation ◽  
Dynamic Range ◽  
Supply Voltage ◽  
Spectral Characteristics ◽  
Wavelength Region ◽  
Silicon Photomultiplier ◽  
Silicon Photomultipliers ◽  
Short Wavelength Region ◽  
Avalanche Photodetectors

Успехи прикладной физики, 2021, том 9, No 2165I. R. Gulakov, A. O. Zenevich, and O. V. KocherginaBelarusian State Academy of Communications8/2 F. Skorina st., Minsk, 220114, BelarusE-mail: [email protected] January 12, 2021Recently multipixel avalanche photodetectors, called silicon photomultipliers are of-ten used to record optical radiation. The influence of ambient temperature and sup-ply voltage on the spectral sensitivity and dynamic range of prototypes of silicon pho-tomultipliers manufactured by JSC "Integral" (Republic ofBelarus) and commercially available photomultipliers KetekRM 3325 and ON Semi FC 30035 has been investigated in this article. It was determined that the spectral sensitivity maxi-mum of silicon photomultipliers is shifted to the short-wavelength region andcorre-sponds to the wavelength of optical radiation of 470 nm. It is shown that an increase in the supply voltage leads to an increase in the sensitivity of the investigated photodetectors, and the dependence of the sensitivity on temperature manifests itself in different ways when exposed to optical radiation of different wavelengths.

scholarly journals Dual Output Sinusoidal Oscillator Using Second Generation Current Controlled Conveyor

2019 ◽  
Vol 23 (2) ◽  
Author(s):  
Avireni Srinivasulu ◽  
Syed Zahiruddin ◽  
Musala Sarada
Keyword(s):  
Integrated Circuits ◽  
Second Generation ◽  
Supply Voltage ◽  
Harmonic Distortion ◽  
Current Feedback ◽  
Transconductance Amplifier ◽  
Sinusoidal Oscillator ◽  
Montecarlo Method ◽  
Current Feedback Operational Amplifier ◽  
Low Supply Voltage

Second Generation Current Controlled Conveyor (CCCII) based tunable Dual Output Sinusoidal Oscillator (MSO) is proposed. It consists of three CCCIIs, a resistor and two grounded capacitors. By tuning external DC bias current, the oscillator frequency and commencement of its oscillations are controlled electronically. The proposed circuit is verified using PSPICE simulator and also on laboratory breadboard using commercially available integrated circuits Current Feedback Operational Amplifier (AD844AN) and Operational Transconductance Amplifier (LM13600) at a supply rail voltage of ±6 V. Further its nonlinearities, sensitivities, performance characteristics are also verified. Comparison of the proposed topology with the ongoing methods are also undertaken. PSPICE simulation results are verified with a low supply voltage of ±1 V, temperature analysis, analysis by using Montecarlo method and finally Total Harmonic Distortion (THD) is also demonstrated.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

Design of Effective Supply Voltage Monitor for Measuring Power Rails of Integrated Circuits

2013 ◽  
Vol E96.C (4) ◽  
pp. 538-545
Author(s):  
Takeshi OKUMOTO ◽  
Kumpei YOSHIKAWA ◽  
Makoto NAGATA
Keyword(s):  
Integrated Circuits ◽  
Supply Voltage

Investigation of Dynamic Range of Silicon Photoelectronic Multiplyers

2021 ◽  
Vol 26 (1) ◽  
pp. 30-39
Author(s):  
A.O. Zenevich ◽  
◽  
O.V. Kochergina ◽  
Keyword(s):  
Optical Radiation ◽  
Dynamic Range ◽  
Supply Voltage ◽  
Threshold Intensity ◽  
Photomultiplier Tubes ◽  
Silicon Photomultiplier ◽  
Low Intensity

For detecting the low-intensity optical radiation the silicon photoelectronic multiplyers are used more often. However, not all characteristics of these photoelectronic multiplyers have been thoroughly studied. So, there is no information about the influence of supply voltage on the value of the dynamic range. In the work as the study objects, the test specimens Si-PEM with a p+–p–n+ structure, produced by JSC Integral (Republik of Belarus), have been used, as well as the serially produced silicon photomultiplyers Ketek PM 3325 and ON Semi FC 30035. It has been found that an increase in the supply voltage leads to the critical decrease. It has been discovered that an increase an in the supply voltage leads to a decreased value of the threshold intensity. It has been proved that the dependence of the dynamic range on the supply voltage has a maximum. To ensure the maximum dynamic range of registration in the photo-detector devices based on the Si-photomultiplier tubes, it is necessary to select the photo-detector supply voltage, corresponding to this maximum. The results obtained in this article can be applied in the development and design of the devices for recording the optical radiation based on silicon photomultiplier tubes.

The Air-to-air Missile Matra 530

1969 ◽  
Vol 73 (701) ◽  
pp. 449-452
Author(s):  
J. E. Cadoux
Keyword(s):  
Air Force ◽  
High Performance ◽  
First Generation ◽  
Second Generation ◽  
Point Of View ◽  
Ground Control ◽  
Close Link ◽  
Pure Pursuit ◽  
Very High ◽  
Pursuit Curve

The Matra 530 is currently called a second generation air-to-air missile. Indeed the first generation of air-to-air missiles was represented in France by the Nord 5103 which was command-guided, or the Matra 511 which was a semi-active, pure pursuit curve missile. In the second part of the 1950's the requirement was obvious for a sophisticated interception system capable of coping with the high and medium altitude threat represented by heavy and medium bombers. The destruction of this threat required a close link with an interception system composed of ground radars, ground control equipment, sophisticated high performance interceptor aircraft and, as a last link, a very high performance missile. From the French Air Force point of view, the two main characteristics of this missile as the last link of an interceptor system, were first its flexibility in different weather environment and counter measure environment; second, its capability to decrease to the maximum the penetration of the enemy bomber, which meant that the missile should be capable of attacking not only in the rear sector but also in frontal attack and in fact in all sectors around the attacking bomber.

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