Atomic layer deposition of zirconium oxide on copper patterned silicon substrate

Atomic layer deposition (ALD) was performed on copper patterned silicon substrates using zirconium precursor and ethanol as both an oxygen source and reducing agent. Ethanol targeted copper oxide formed on the copper surface, reverting it back to metallic copper. Selective ALD (SALD) of metal oxides on silicon surfaces over copper surfaces has been demonstrated up to 2-3 nm, though the process seems to lose its selectivity afterwards. We strive to maintain selectivity to thicker films by stepping away from conventional ALD processes utilizing oxidants. From previous studies with HfO2 and TiO2 SALD, we speculate that the oxidation of copper to copper oxide spoils selectivity. In this present study, we carried out oxidant-free ALD by using ethanol as a co-reactant solely on the silicon portion of these substrates. This process will occur in-situ every 20-30 ALD cycles for ALD of ZrO2. As expected, reduced ALD growth rate was observed with ethanol compared to that of water or ozone, with a growth rate of about 0.04 nm/cycle on the silicon portion of the substrate.

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Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films

Beilstein Journal of Nanotechnology ◽

10.3762/bjnano.4.83 ◽

2013 ◽

Vol 4 ◽

pp. 732-742 ◽

Cited By ~ 67

Author(s):

Jörg Haeberle ◽

Karsten Henkel ◽

Hassan Gargouri ◽

Franziska Naumann ◽

Bernd Gruska ◽

...

Keyword(s):

Growth Rate ◽

Refractive Index ◽

Atomic Layer Deposition ◽

Photoelectron Spectroscopy ◽

Film Growth ◽

Atomic Layer ◽

Silicon Substrates ◽

Initial State ◽

Elemental Ratios ◽

Layer Deposition

We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) in the SENTECH SI ALD LL system. The T-ALD Al2O3 layers were deposited at 200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt) and 200 °C. We show data from spectroscopic ellipsometry (thickness, refractive index, growth rate) over 4” wafers and correlate them to X-ray photoelectron spectroscopy (XPS) results. The 200 °C T-ALD and PE-ALD processes yield films with similar refractive indices and with oxygen to aluminum elemental ratios very close to the stoichiometric value of 1.5. However, in both also fragments of the precursor are integrated into the film. The PE-ALD films show an increased growth rate and lower carbon contaminations. Reducing the deposition temperature down to rt leads to a higher content of carbon and CH-species. We also find a decrease of the refractive index and of the oxygen to aluminum elemental ratio as well as an increase of the growth rate whereas the homogeneity of the film growth is not influenced significantly. Initial state energy shifts in all PE-ALD samples are observed which we attribute to a net negative charge within the films.

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Selective Atomic Layer Deposition of TiO2 on Silicon/Copper-patterned Substrates

The Journal of Undergraduate Research at the University of Illinois at Chicago ◽

10.5210/jur.v5i1.7500 ◽

2012 ◽

Vol 5 (1) ◽

Author(s):

A. Jablansky ◽

Jorge I. Rossero A. ◽

G. Jursich ◽

C.G. Takoudis

Keyword(s):

Growth Rate ◽

Atomic Layer Deposition ◽

Exposure Time ◽

Linear Growth ◽

Atomic Layer ◽

Linear Growth Rate ◽

Silicon Substrates ◽

Oxidizing Agent ◽

Microelectronic Devices ◽

Layer Deposition

As microelectronic devices shrink, thinner diffusion barrier layers are needed to separate the copper and silicon substrates while leaving the copper vias open for conduction. Selective atomic layer deposition (ALD) of titanium dioxide(TiO2), a good barrier layer, onto silicon was studied by minimizing the exposure time to air of these substrates immediately before deposition. The minimized exposure time mimicked industrial conditions, where waiting before deposition is costly. Tetrakis(diethylamido)titanium (TDEAT) was used as the precursor, and water was the oxidizing agent. TDEAT was first deposited on silicon wafers using ALD to verify a steady, linear growth rate reported in the literature, and the measured rate of 0.9 ± 0.1 Å/cycle is consistent with values previously reported. Minimized exposure to air had no effect on the growth rate of TiO2 on silicon, and the effect on copper has yet to be determined.

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Plasma-Enhanced Atomic Layer Deposition of p-Type Copper Oxide Semiconductors with Tunable Phase, Oxidation State, and Morphology

The Journal of Physical Chemistry C ◽

10.1021/acs.jpcc.1c00429 ◽

2021 ◽

Author(s):

Julia D. Lenef ◽

Jaesung Jo ◽

Orlando Trejo ◽

David J. Mandia ◽

Rebecca L. Peterson ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Copper Oxide ◽

Oxidation State ◽

Atomic Layer ◽

Oxide Semiconductors ◽

Layer Deposition ◽

Phase Oxidation ◽

P Type

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RBS and NRA analysis for films with high growth rate prepared by atomic layer deposition

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2020.12.015 ◽

2021 ◽

Vol 489 ◽

pp. 20-25

Author(s):

B. Xia ◽

J.J. Ganem ◽

S. Steydli ◽

H. Tancrez ◽

I. Vickridge

Keyword(s):

Growth Rate ◽

Atomic Layer Deposition ◽

High Growth ◽

Atomic Layer ◽

High Growth Rate ◽

Layer Deposition

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Atomic Layer Deposition of Antimony Oxide on Hydrogen-terminated Silicon Substrates

ECS Meeting Abstracts ◽

10.1149/ma2009-01/15/696 ◽

2009 ◽

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Antimony Oxide ◽

Silicon Substrates ◽

Layer Deposition

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High Growth Rate SiO2 by Atomic Layer Deposition

ECS Transactions ◽

10.1149/1.2911529 ◽

2019 ◽

Vol 13 (1) ◽

pp. 453-457 ◽

Cited By ~ 4

Author(s):

Raija Matero ◽

Suvi Haukka ◽

Marko Tuominen

Keyword(s):

Growth Rate ◽

Atomic Layer Deposition ◽

High Growth ◽

Atomic Layer ◽

High Growth Rate ◽

Layer Deposition

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Atomic Layer Deposition of TiN below 600 K Using N2H4

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.282.232 ◽

2018 ◽

Vol 282 ◽

pp. 232-237

Author(s):

Adam Hinckley ◽

Anthony Muscat

Keyword(s):

Growth Rate ◽

Atomic Layer Deposition ◽

Titanium Nitride ◽

Photoelectron Spectroscopy ◽

Film Growth ◽

Detection Limits ◽

Atomic Layer ◽

Volatile Species ◽

X Ray ◽

Layer Deposition

Atomic layer deposition (ALD) was used to grow titanium nitride (TiN) on SiO2with TiCl4and N2H4. X-ray photoelectron spectroscopy (XPS) and ellipsometry were used to characterize film growth. A hydrogen-terminated Si (Si-H) surface was used as a reference to understand the reaction steps on SPM cleaned SiO2. The growth rate of TiN at 573 K doubled on Si-H compared to SiO2because of the formation of Si-N bonds. When the temperature was raised to 623 K, O transferred from Ti to Si to form Si-N when exposed to N2H4. Oxygen and Ti could be removed at 623 K by TiCl4producing volatile species. The added surface reactions reduce the Cl in the film below detection limits.

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