scholarly journals Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films

2013 ◽  
Vol 4 ◽  
pp. 732-742 ◽  
Author(s):  
Jörg Haeberle ◽  
Karsten Henkel ◽  
Hassan Gargouri ◽  
Franziska Naumann ◽  
Bernd Gruska ◽  
...  
Keyword(s):  
Growth Rate ◽  
Refractive Index ◽  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Atomic Layer ◽  
Silicon Substrates ◽  
Initial State ◽  
Elemental Ratios ◽  
Layer Deposition

We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) in the SENTECH SI ALD LL system. The T-ALD Al2O3 layers were deposited at 200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt) and 200 °C. We show data from spectroscopic ellipsometry (thickness, refractive index, growth rate) over 4” wafers and correlate them to X-ray photoelectron spectroscopy (XPS) results. The 200 °C T-ALD and PE-ALD processes yield films with similar refractive indices and with oxygen to aluminum elemental ratios very close to the stoichiometric value of 1.5. However, in both also fragments of the precursor are integrated into the film. The PE-ALD films show an increased growth rate and lower carbon contaminations. Reducing the deposition temperature down to rt leads to a higher content of carbon and CH-species. We also find a decrease of the refractive index and of the oxygen to aluminum elemental ratio as well as an increase of the growth rate whereas the homogeneity of the film growth is not influenced significantly. Initial state energy shifts in all PE-ALD samples are observed which we attribute to a net negative charge within the films.

Atomic Layer Deposition of TiN below 600 K Using N2H4

2018 ◽  
Vol 282 ◽  
pp. 232-237
Author(s):  
Adam Hinckley ◽  
Anthony Muscat
Keyword(s):  
Growth Rate ◽  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Detection Limits ◽  
Atomic Layer ◽  
Volatile Species ◽  
X Ray ◽  
Layer Deposition

Atomic layer deposition (ALD) was used to grow titanium nitride (TiN) on SiO2with TiCl4and N2H4. X-ray photoelectron spectroscopy (XPS) and ellipsometry were used to characterize film growth. A hydrogen-terminated Si (Si-H) surface was used as a reference to understand the reaction steps on SPM cleaned SiO2. The growth rate of TiN at 573 K doubled on Si-H compared to SiO2because of the formation of Si-N bonds. When the temperature was raised to 623 K, O transferred from Ti to Si to form Si-N when exposed to N2H4. Oxygen and Ti could be removed at 623 K by TiCl4producing volatile species. The added surface reactions reduce the Cl in the film below detection limits.

Effects of Tris(tert-pentoxy)silanol Purge Time on SiO2 Thin-Film Growth Rate in Rapid Atomic Layer Deposition

2013 ◽  
Vol 2 (10) ◽  
pp. P91-P93 ◽  
Author(s):  
J. R. Kim ◽  
H. Lim ◽  
S. Park ◽  
Y. J. Choi ◽  
S. Suh ◽  
...  
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Film Growth Rate ◽  
Sio2 Thin Film ◽  
Layer Deposition

scholarly journals Atomic Layer Deposition of Metal Oxide Films on GaAs (100) surfaces

2009 ◽  
Vol 1155 ◽  
Author(s):  
Theodosia Gougousi ◽  
John W. Lacis ◽  
Justin C Hackley ◽  
John Demaree
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Atomic Layer ◽  
Metal Oxide Films ◽  
Rutherford Back Scattering ◽  
Native Oxides ◽  
Layer Deposition ◽  
Back Scattering ◽  
Film Substrate

AbstractAtomic Layer Deposition is used to deposit HfO2 and TiO2 films on GaAs (100) native oxides and etched surfaces. For the deposition of HfO2 films two different but similar ALD chemistries are used: i) tetrakis dimethyl amido hafnium (TDMAHf) and H2O at 275°C and ii) tetrakis ethylmethyl amido hafnium (TEMAHf) and H2O at 250°C. TiO2 films are deposited from tetrakis dimethyl amido titanium (TDMATi) and H2O at 200°C. Rutherford Back Scattering shows linear film growth for all processes. The film/substrate interface is examined using x-ray Photoelectron Spectroscopy and confirms the presence of an “interfacial cleaning” mechanism.

Selective Atomic Layer Deposition of TiO2 on Silicon/Copper-patterned Substrates

2012 ◽  
Vol 5 (1) ◽  
Author(s):  
A. Jablansky ◽  
Jorge I. Rossero A. ◽  
G. Jursich ◽  
C.G. Takoudis
Keyword(s):  
Growth Rate ◽  
Atomic Layer Deposition ◽  
Exposure Time ◽  
Linear Growth ◽  
Atomic Layer ◽  
Linear Growth Rate ◽  
Silicon Substrates ◽  
Oxidizing Agent ◽  
Microelectronic Devices ◽  
Layer Deposition

As microelectronic devices shrink, thinner diffusion barrier layers are needed to separate the copper and silicon substrates while leaving the copper vias open for conduction. Selective atomic layer deposition (ALD) of titanium dioxide(TiO2), a good barrier layer, onto silicon was studied by minimizing the exposure time to air of these substrates immediately before deposition. The minimized exposure time mimicked industrial conditions, where waiting before deposition is costly. Tetrakis(diethylamido)titanium (TDEAT) was used as the precursor, and water was the oxidizing agent. TDEAT was first deposited on silicon wafers using ALD to verify a steady, linear growth rate reported in the literature, and the measured rate of 0.9 ± 0.1 Å/cycle is consistent with values previously reported. Minimized exposure to air had no effect on the growth rate of TiO2 on silicon, and the effect on copper has yet to be determined.

Atomic layer deposition of zirconium oxide on copper patterned silicon substrate

2014 ◽  
Vol 7 (1) ◽  
Author(s):  
J. Parulekar ◽  
S. Selvaraj ◽  
C.G. Takoudis
Keyword(s):  
Growth Rate ◽  
Atomic Layer Deposition ◽  
Copper Oxide ◽  
Metallic Copper ◽  
Atomic Layer ◽  
Copper Surface ◽  
Silicon Surfaces ◽  
Silicon Substrates ◽  
Copper Surfaces ◽  
Layer Deposition

Atomic layer deposition (ALD) was performed on copper patterned silicon substrates using zirconium precursor and ethanol as both an oxygen source and reducing agent. Ethanol targeted copper oxide formed on the copper surface, reverting it back to metallic copper. Selective ALD (SALD) of metal oxides on silicon surfaces over copper surfaces has been demonstrated up to 2-3 nm, though the process seems to lose its selectivity afterwards. We strive to maintain selectivity to thicker films by stepping away from conventional ALD processes utilizing oxidants. From previous studies with HfO2 and TiO2 SALD, we speculate that the oxidation of copper to copper oxide spoils selectivity. In this present study, we carried out oxidant-free ALD by using ethanol as a co-reactant solely on the silicon portion of these substrates. This process will occur in-situ every 20-30 ALD cycles for ALD of ZrO2. As expected, reduced ALD growth rate was observed with ethanol compared to that of water or ozone, with a growth rate of about 0.04 nm/cycle on the silicon portion of the substrate.

Kinetic Modeling of Film Growth Rate in Atomic Layer Deposition

2001 ◽  
Vol 148 (6) ◽  
pp. C403 ◽  
Author(s):  
Jung-Wook Lim ◽  
Hyung-Sang Park ◽  
Sang-Won Kang
Keyword(s):  
Growth Rate ◽  
Atomic Layer Deposition ◽  
Kinetic Modeling ◽  
Film Growth ◽  
Atomic Layer ◽  
Film Growth Rate ◽  
Layer Deposition

Aluminum Dihydride Complexes and their Unexpected Application in Atomic Layer Deposition of Titanium Carbonitride Films

2018 ◽  
Author(s):  
Kyle J. Blakeney ◽  
Philip D. Martin ◽  
Charles H. Winter
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
High Growth ◽  
Atomic Layer ◽  
Grazing Incidence ◽  
High Growth Rate ◽  
Titanium Carbonitride ◽  
X Ray ◽  
Layer Deposition

<p>Aluminum dihydride complexes containing amido-amine ligands were synthesized and evaluated as potential reducing precursors for thermal atomic layer deposition (ALD). Highly volatile monomeric complexes AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NMe<sub>2</sub>) and AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NC<sub>4</sub>H<sub>8</sub>) are more thermally stable than common Al hydride thin film precursors such as AlH<sub>3</sub>(NMe<sub>3</sub>). ALD film growth experiments using TiCl<sub>4</sub> and AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NMe<sub>2</sub>) produced titanium carbonitride films with a high growth rate of 1.6-2.0 Å/cycle and resistivities around 600 μΩ·cm within a very wide ALD window of 220-400 °C. Importantly, film growth proceeded via self-limited surface reactions, which is the hallmark of an ALD process. Root mean square surface roughness was only 1.3 % of the film thickness at 300 °C by atomic force microscopy. The films were polycrystalline with low intensity, broad reflections corresponding to the cubic TiN/TiC phase according to grazing incidence X-ray diffraction. Film composition by X-ray photoelectron spectroscopy was approximately TiC<sub>0.8</sub>N<sub>0.5</sub> at 300 °C with small amounts of Al (6 at%), Cl (4 at%) and O (4 at%) impurities. Remarkably, self-limited growth and low Al content was observed in films deposited well above the solid-state thermal decomposition point of AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NMe<sub>2</sub>), which is ca. 185 °C. Similar growth rates, resistivities, and film compositions were observed in ALD film growth trials using AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NC<sub>4</sub>H<sub>8</sub>). </p>

Aluminum Dihydride Complexes and their Unexpected Application in Atomic Layer Deposition of Titanium Carbonitride Films

2018 ◽  
Author(s):  
Kyle J. Blakeney ◽  
Philip D. Martin ◽  
Charles H. Winter
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
High Growth ◽  
Atomic Layer ◽  
Grazing Incidence ◽  
High Growth Rate ◽  
Titanium Carbonitride ◽  
X Ray ◽  
Layer Deposition

<p>Aluminum dihydride complexes containing amido-amine ligands were synthesized and evaluated as potential reducing precursors for thermal atomic layer deposition (ALD). Highly volatile monomeric complexes AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NMe<sub>2</sub>) and AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NC<sub>4</sub>H<sub>8</sub>) are more thermally stable than common Al hydride thin film precursors such as AlH<sub>3</sub>(NMe<sub>3</sub>). ALD film growth experiments using TiCl<sub>4</sub> and AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NMe<sub>2</sub>) produced titanium carbonitride films with a high growth rate of 1.6-2.0 Å/cycle and resistivities around 600 μΩ·cm within a very wide ALD window of 220-400 °C. Importantly, film growth proceeded via self-limited surface reactions, which is the hallmark of an ALD process. Root mean square surface roughness was only 1.3 % of the film thickness at 300 °C by atomic force microscopy. The films were polycrystalline with low intensity, broad reflections corresponding to the cubic TiN/TiC phase according to grazing incidence X-ray diffraction. Film composition by X-ray photoelectron spectroscopy was approximately TiC<sub>0.8</sub>N<sub>0.5</sub> at 300 °C with small amounts of Al (6 at%), Cl (4 at%) and O (4 at%) impurities. Remarkably, self-limited growth and low Al content was observed in films deposited well above the solid-state thermal decomposition point of AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NMe<sub>2</sub>), which is ca. 185 °C. Similar growth rates, resistivities, and film compositions were observed in ALD film growth trials using AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NC<sub>4</sub>H<sub>8</sub>). </p>

scholarly journals Microstructures of HfOx Films Prepared via Atomic Layer Deposition Using La(NO3)3·6H2O Oxidants

Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7478
Author(s):  
Seon Yong Kim ◽  
Yong Chan Jung ◽  
Sejong Seong ◽  
Taehoon Lee ◽  
In-Sung Park ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Energy ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Deposition Process ◽  
Oxide Semiconductor ◽  
Layer Deposition ◽  
Wide Range

Hafnium oxide (HfOx) films have a wide range of applications in solid-state devices, including metal–oxide–semiconductor field-effect transistors (MOSFETs). The growth of HfOx films from the metal precursor tetrakis(ethylmethylamino) hafnium with La(NO3)3·6H2O solution (LNS) as an oxidant was investigated. The atomic layer deposition (ALD) conditions were optimized, and the chemical state, surface morphology, and microstructure of the prepared films were characterized. Furthermore, to better understand the effects of LNS on the deposition process, HfOx films deposited using a conventional oxidant (H2O) were also prepared. The ALD process using LNS was observed to be self-limiting, with an ALD temperature window of 200–350 °C and a growth rate of 1.6 Å per cycle, two times faster than that with H2O. HfOx films deposited using the LNS oxidant had smaller crystallites than those deposited using H2O, as well as more suboxides or defects because of the higher number of grain boundaries. In addition, there was a difference in the preferred orientations of the HfOx films deposited using LNS and H2O, and consequently, a difference in surface energy. Finally, a film growth model based on the surface energy difference was proposed to explain the observed growth rate and crystallite size trends.

scholarly journals Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 978
Author(s):  
Ming-Jie Zhao ◽  
Zhi-Xuan Zhang ◽  
Chia-Hsun Hsu ◽  
Xiao-Ying Zhang ◽  
Wan-Yu Wu ◽  
...  
Keyword(s):  
Growth Rate ◽  
Substrate Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Amorphous Structure ◽  
Reaction Energy ◽  
Film Growth Rate ◽  
In2o3 Film ◽  
Intermediate Temperature Range ◽  
Layer Deposition

Indium oxide (In2O3) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In2O3 film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors are inactive and thermally unstable. In this work, In2O3 film was prepared by ALD using a remote O2 plasma as oxidant, which provides highly reactive oxygen radicals, and hence significantly enhancing the film growth. The substrate temperature that determines the adsorption state on the substrate and reaction energy of the precursor was investigated. At low substrate temperature (100–150 °C), the ratio of chemically adsorbed precursors is low, leading to a low growth rate and amorphous structure of the films. An amorphous-to-crystalline transition was observed at 150–200 °C. An ALD window with self-limiting reaction and a reasonable film growth rate was observed in the intermediate temperature range of 225–275 °C. At high substrate temperature (300–350 °C), the film growth rate further increases due to the decomposition of the precursors. The resulting film exhibits a rough surface which consists of coarse grains and obvious grain boundaries. The growth mode and properties of the In2O3 films prepared by plasma-enhanced ALD can be efficiently tuned by varying the substrate temperature.

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