Three Sectional Drift-Diffusion Mathematical Model Of The Field Effect Transistor With A Schottky Barrier

2015 ◽  
Vol 10 (1) ◽  
pp. 57-62
Author(s):  
Sergey Savelkaev ◽  
Valerik Airapetyan ◽  
Vladimir Litovchenko
Keyword(s):  
Mathematical Model ◽  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Carriers ◽  
Drift Diffusion ◽  
Flat Area ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Effect Transistor

Three sectional drift-diffusion mathematical model of the field effect transistor with a Schottky barrier is proposed. It takes into account the accumulation of charge carriers in the additionally introduced third section, which significantly improves the accuracy of the calculation of the current-voltage characteristics flat area of the transistors. This is important for developers of these transistors, as well as for amplifying and autogenerating microwave devices constructors.

scholarly journals SIMULATING CURRENT - VOLTAGE CHARACTERISTICS OF MOLECULAR TRANSISTOR FIELD EFFECT TRANSISTOR

2009 ◽  
Vol 12 (13) ◽  
pp. 5-12
Author(s):  
Hien Sy Dinh ◽  
Trung Hoang Huynh
Keyword(s):  
Field Effect ◽  
High Speed ◽  
Field Effect Transistor ◽  
Promising Alternative ◽  
Current Voltage ◽  
Significant Difference ◽  
Current Voltage Characteristics ◽  
Effect Transistor ◽  
Non Equilibrium Green’S Function ◽  
Material Temperature

Molecular Field Effect Transistor (MFET) is a promising alternative candidate of traditional MOSFET in future due to its small size, low power consumption and high speed. In this work, we introduce a model of three-terminal MFET. The structure of the MFET is in shape like traditional MOSFET, but its conductive channel is replaced by a benzene-1,4-dithiolate molecule. We use non-equilibrium Green's function method to compute transport function of charges and ultimately, the current-voltage (1-V) characteristics. The program is written by using graphic user guide (GUI) in Matlab. We have found significant difference of I-V characteristics between MOSFET and MFET. In addition, impacts of types of material, temperature, and bias on I-V characteristics of the MFET have been considered. Using GUI in Matlab, obtained results of simulations are intuitively displayed.

scholarly journals SIMULATION OF CURRENT-VOLTAGE CHARACTERISTICS OF SPIN FIELD EFFECT TRANSISTOR USING NEMO-VN2

2012 ◽  
Vol 15 (3) ◽  
pp. 5-16
Author(s):  
Hien Sy Dinh
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Graphic User Interface ◽  
Green Function Method ◽  
Spin Field ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Effect Transistor ◽  
Spin Fet

We have developed a simulator for nanoelectronics devices, NEMO-VN2. In this work, we provide an overview of spin field effect transistor. We use the simulator to explore the performance of spin FET. The model of the spin FET is based on non-equilibrium Green function method and implemented by using graphic user interface of Matlab. The current-voltage characteristics such as drain current-voltage, drain current-gate voltage ones are explored.

scholarly journals Simulation of current-voltage characteristics of graphene field effect transistor (GFET)

2013 ◽  
Vol 16 (3) ◽  
pp. 5-12
Author(s):  
Hien Sy Dinh
Keyword(s):  
Field Effect ◽  
Function Method ◽  
Field Effect Transistor ◽  
Graphic User Interface ◽  
Graphene Field Effect Transistor ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Effect Transistor ◽  
Graphene Fet ◽  
Non Equilibrium Green’S Function

Graphene has been one of the most vigorously studied research materials. We have developed a program for simulation of graphene field effect transistor (GFET). In this work, we use the simulation program to explore the performance of graphene FET. The simple model of the graphene FET is based on non-equilibrium Green’s function method and first is implemented by using graphic user interface of Matlab. The current-voltage characteristics of the GFET and affects of channel materials, gate materials, size of graphene FET, temperature on the characteristics are explored.

scholarly journals ANALYSIS THE EFFECTS OF FERROELECTRIC ELECTRIC FIELD ON CURRENT-VOLTAGE CHARACTERISTICS OF THE FERROELECTRIC FIELD EFFECT TRANSISTOR USING SRBI2TA2O9 THIN FILM

2020 ◽  
Vol 28 ◽  
Author(s):  
AN NGUYEN VAN ◽  
AN VO XUAN ◽  
HONG THAM LE THI
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Effect Transistor

ANALYSIS THE EFFECTS OF FERROELECTRIC ELECTRIC FIELD ONCURRENT-VOLTAGE CHARACTERISTICS OF THE FERROELECTRICFIELD EFFECT TRANSISTOR USING SRBI2TA2O9 THIN FILM

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