scholarly journals A Study on Structure and Magnetic Properties of Fe-N Thin Films with Different DC Magnetron Sputtering Power and Time

2017 ◽  
Vol 50 (2) ◽  
pp. 119-124
Author(s):  
Dong-Won Han ◽  
Won-Uk Park ◽  
Jong-Woo Kim ◽  
Ah-Ram Kwon
2013 ◽  
Vol 802 ◽  
pp. 47-52
Author(s):  
Chuleerat Ibuki ◽  
Rachasak Sakdanuphab

In this work the effects of amorphous (glass) and crystalline (Si) substrates on the structural, morphological and adhesion properties of CoFeB thin film deposited by DC Magnetron sputtering were investigated. It was found that the structure of a substrate affects to crystal formation, surface morphology and adhesion of CoFeB thin films. The X-Ray diffraction patterns reveal that as-deposited CoFeB thin film at low sputtering power was amorphous and would become crystal when the power increased. The increase in crystalline structure of CoFeB thin film is attributed to the crystalline substrate and the increase of kinetic energy of sputtering atoms. Atomic Force Microscopy images of CoFeB thin film clearly show that the roughness, grain size, and uniformity correlate to the sputtering power and the structure of substrate. The CoFeB thin film on glass substrate shows a smooth surface and a small grain size whereas the CoFeB thin film on Si substrate shows a rough surface and a slightly increases of grain size. Sticky Tape Test on CoFeB thin film deposited on glass substrate indicates the adhesion failure with a high sputtering power. The results suggest that the crystalline structure of substrate affects to the atomic bonding and the sputtering power affects to intrinsic stress of CoFeB thin film.


RSC Advances ◽  
2017 ◽  
Vol 7 (70) ◽  
pp. 44097-44103 ◽  
Author(s):  
Jingfan Ye ◽  
Marco Hauke ◽  
Vikram Singh ◽  
Rajeev Rawat ◽  
Mukul Gupta ◽  
...  

Metamagnetic transition in polycrystalline Fe-Rh film on Al2O3 (0001) deposited by DC magnetron sputtering.


2014 ◽  
Vol 575 ◽  
pp. 254-263 ◽  
Author(s):  
Hua Jing Zheng ◽  
Chi Zhang ◽  
Zheng Ruan

With high optical transparency and electrical conductivity, ITO thin films were fabricated by DC magnetron sputtering. Series of research and exploration are presented on DC magnetron sputtering method for preparing ITO thin film. With substrate temperature of 60 °C, sputtering power of 200W,sputtering pressure of 1 mTorr, water pressure of 2×10-5Torr, the sheet resistance of the ITO conductive substrate is 53 Ω/□ and the transmittance is 83%.


2004 ◽  
Vol 19 (4) ◽  
pp. 352-355 ◽  
Author(s):  
Wei Tao Zheng ◽  
Xin Wang ◽  
Xianggui Kong ◽  
Hongwei Tian ◽  
Shansheng Yu ◽  
...  

Fe–N thin films were deposited on glass substrates by dc magnetron sputtering under various Ar∕N2 discharge conditions. Crystal structures and elemental compositions of the films were characterized by X-ray diffraction and X-ray photoelectron spectroscopy. Magnetic properties of the films were measured using a superconducting quantum interference device magnetometer. Films deposited at different N2∕(Ar+N2) flow ratios were found to have different crystal structures and different nitrogen contents. When the flow ratios were 60%, 50%, and 30%, a nonmagnetic single-phase FeN was formed in the films. At the flow ratio of 10%, two crystal phases of γ′-Fe4N and ε-Fe3N were detected. When the flow ratio reduced to 5%, a mixture of α-Fe, ε-Fe3N, FeN0.056, and α″-Fe16N2 phases was obtained. The value of saturation magnetization for the mixture was found to be larger than that of pure Fe.


CrystEngComm ◽  
2014 ◽  
Vol 16 (40) ◽  
pp. 9528-9533 ◽  
Author(s):  
M. Abuín ◽  
L. Pérez ◽  
A. Mascaraque ◽  
M. Maicas

Changes in coercivity and atomic distances (EXAFS) of 20 nm Fe53Co47 thin films grown by DC and PCD magnetron sputtering.


2013 ◽  
Vol 834-836 ◽  
pp. 79-89
Author(s):  
Xian Ming Yang ◽  
Lin Liu ◽  
Juan Xiu Lin

With high optical transparency and electrical conductivity, ITO thin films were fabricated by DC magnetron sputtering. Based on orthogonal test table L18 (35), the effects of process parameters included water partial pressure, work pressure, substrate temperature, oxygen flow rate and sputtering power, on the optoelectronics properties of ITO thin films were investigated in detail(systematically). Calibration of sheet resistance transmittance, atomic force microscope, and X-ray diffraction were employed to characterize the ITO films.


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