Diffusion Coefficients of Ferrocene and Ferricinium Ion in Tetraethylammonium Perchlorate Acetonitrile Solutions, as Determined by Chronoamperometry

The diffusion coefficient of SO2 and acetonitrile in Nafion perfluorinated ion exchange membranes have been determined from chromatographic measurements of SO2 concentration and the isotopic ratios in acetonitrile solutions. The diffusion coefficients vary with residual water content and attain values about one fifth those reported for water-saturated membranes falling in the range 1–2 × 10−7 cm2 s−1. Values obtained for Teflon reinforced material indicates diffusion takes place over an effective surface more than twice the optically open area.

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Diffusion Coefficients of Tris(β-diketonato)ruthenium Complexes of Different Charge Numbers in Acetonitrile Solutions, Measured by Chronoamperometry

Journal of Solution Chemistry ◽

10.1007/s10953-007-9185-7 ◽

2007 ◽

Vol 36 (10) ◽

pp. 1243-1259 ◽

Cited By ~ 13

Author(s):

Haruko Ikeuchi ◽

Kaoru Naganuma ◽

Marie Ichikawa ◽

Hiromichi Ozawa ◽

Tomoya Ino ◽

...

Keyword(s):

Diffusion Coefficients ◽

Ruthenium Complexes ◽

Acetonitrile Solutions

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What use for polysilsesquioxane lithium salts in lithium batteries?

New Journal of Chemistry ◽

10.1039/c6nj00979d ◽

2016 ◽

Vol 40 (9) ◽

pp. 7657-7662

Author(s):

Mathieu Meyer ◽

Lydie Viau ◽

Ahmad Mehdi ◽

Sophie Monge ◽

Patrick Judeinstein ◽

...

Keyword(s):

Molecular Weight ◽

Nmr Spectroscopy ◽

High Molecular Weight ◽

Lithium Batteries ◽

Diffusion Coefficients ◽

Transference Numbers ◽

Lithium Salts ◽

Self Diffusion ◽

Acetonitrile Solutions ◽

Pfg Nmr

High molecular weight polysilsesquioxane lithium salts were prepared. Ion self-diffusion coefficients and transference numbers in acetonitrile solutions were quantified by PFG NMR spectroscopy.

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Relationship between Charge Transfer Diffusion Coefficients and Doping Level for electro generated thin PEDOT films on ITO

Bionatura ◽

10.21931/rb/cs/2019.02.01.8 ◽

2019 ◽

Vol 02 (Bionatura Conference Serie) ◽

Cited By ~ 2

Author(s):

Alex Palma-Cando ◽

Bernardo A. Frontana-Uribe ◽

Victor Varela-Guerrero

Keyword(s):

Charge Transfer ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Diffusion Coefficients ◽

Direct Relationship ◽

Tetrabutylammonium Perchlorate ◽

Wide Range ◽

Acetonitrile Solutions ◽

D Values ◽

Potentiostatic Regime

Thin films of poly-3,4-ethylene dioxythiophene (PEDOT) were electrodeposited on transparent electrodes of indium tin oxide (ITO) using potentiostatic regime. These films had thicknesses ranging from 15 nm to 60 nm and were studied using UV-vis absorption and chronoamperometric techniques in monomer-free tetrabutylammonium perchlorate/acetonitrile solutions. The charge transfer diffusion coefficient (D) of the films were calculated using Cottrell model for a wide range of potential steps from −1.60 to 1.60 V vs. Ag°/AgNO3. For p-doped films, the highest diffusion coefficients were obtained when a potential of 0.70 V was applied. Moreover, a direct relationship between film thickness and their diffusion coefficients was found for thin PEDOT films showing D values up to 1.4 × 10−9 cm2 s−1 for 60 nm thickness films. These values are remarkably higher than the D of 1.8 × 10−11 cm2 s−1 obtained for spin-coated PEDOT: PSS films of similar thickness.

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Understanding the linear correlation between diffusion coefficient and molecular weight. A model to estimate diffusion coefficients in acetonitrile solutions

Electrochemistry Communications ◽

10.1016/j.elecom.2010.11.032 ◽

2011 ◽

Vol 13 (2) ◽

pp. 129-132 ◽

Cited By ~ 53

Author(s):

Drochss P. Valencia ◽

Felipe J. González

Keyword(s):

Molecular Weight ◽

Diffusion Coefficient ◽

Linear Correlation ◽

Diffusion Coefficients ◽

Acetonitrile Solutions

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Interlayer mixing in GaAs/AlxGa1-xAs heterostructures as a result of Se+ ion implantation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100106600 ◽

1988 ◽

Vol 46 ◽

pp. 908-909

Author(s):

E.G. Bithell ◽

W.M. Stobbs

Keyword(s):

Ion Implantation ◽

Diffusion Coefficients ◽

Dark Field ◽

Atomic Mass ◽

Composition Profile ◽

Semiconductor Heterostructures ◽

Transmission Electron ◽

Microscope Images ◽

Damage Process ◽

Electron Energy Loss

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.

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