High-performance poly-Ge short-channel metal–oxide–semiconductor field-effect transistors formed on SiO2layer by flash lamp annealing
Keyword(s):
1991 ◽
Vol 30
(Part 2, No. 4A)
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pp. L535-L537
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Keyword(s):
1995 ◽
Vol 34
(Part 1, No. 9A)
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pp. 4722-4727
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2007 ◽
Vol 46
(6A)
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pp. 3283-3290
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2011 ◽
Vol 29
(3)
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pp. 032211
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Keyword(s):
1997 ◽
Vol 36
(Part 1, No. 6A)
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pp. 3448-3459
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2010 ◽
Vol 49
(7)
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pp. 074304
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