A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications
2018 ◽
Vol 6
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pp. 797-802
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Keyword(s):
2006 ◽
Vol 45
(No. 35)
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pp. L932-L934
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2015 ◽
Vol 36
(4)
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pp. 318-320
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2015 ◽
Vol 764-765
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pp. 486-490
2018 ◽
Vol 913
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pp. 870-875
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