Adjustable built-in resistor on oxygen-vacancy-rich electrode-capped resistance random access memory

2016 ◽  
Vol 9 (10) ◽  
pp. 104201 ◽  
Author(s):  
Chih-Hung Pan ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
Tian-Jian Chu ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory

Design principles of tuning oxygen vacancy diffusion in SrZrO3 for resistance random access memory

2015 ◽  
Vol 3 (16) ◽  
pp. 4081-4085 ◽  
Author(s):  
Zhonglu Guo ◽  
Linggang Zhu ◽  
Jian Zhou ◽  
Zhimei Sun
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Vacancies ◽  
Random Access ◽  
Random Access Memory ◽  
Vacancy Diffusion ◽  
Access Memory ◽  
Promising Candidate ◽  
Resistance Random Access Memory ◽  
Non Volatile Memory ◽  
Oxygen Vacancy Diffusion

Resistance random access memory (RRAM) is known to be a promising candidate for next generation non-volatile memory devices, in which the diffusion of oxygen vacancies plays a key role in resistance switching.

Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory

2012 ◽  
Vol 101 (24) ◽  
pp. 243503 ◽  
Author(s):  
Moon-Seok Kim ◽  
Young Hwan Hwang ◽  
Sungho Kim ◽  
Zheng Guo ◽  
Dong-Il Moon ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Vacancy Concentration ◽  
Random Access ◽  
Random Access Memory ◽  
Oxygen Vacancy Concentration ◽  
Access Memory ◽  
Resistance Random Access Memory

Switching mechanism of Al/La1−xSrxMnO3 resistance random access memory. I. Oxygen vacancy formation in perovskites

RSC Advances ◽  
2015 ◽  
Vol 5 (124) ◽  
pp. 102772-102779 ◽  
Author(s):  
Nodo Lee ◽  
Yves Lansac ◽  
Hyunsang Hwang ◽  
Yun Hee Jang
Keyword(s):  
Oxygen Vacancy ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Vacancy Formation ◽  
Access Memory ◽  
Half Metallic ◽  
Switching Mechanism ◽  
Resistance Random Access Memory ◽  
Oxygen Vacancy Formation

The oxygen vacancy formation in half-metallic perovskite LSMO itself plays an interesting role in the resistive switching.

Multilevel oxygen-vacancy conductive filaments in β-Ga2O3 based resistive random access memory

2021 ◽  
Vol 23 (10) ◽  
pp. 5975-5983
Author(s):  
Jie Hou ◽  
Rui Guo ◽  
Jie Su ◽  
Yawei Du ◽  
Zhenhua Lin ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Low Resistance ◽  
Multilevel Storage

In this study, at least three kinds of VOs and conductive filaments with low resistance states and forming and set voltages are found for β-Ga2O3 memory. This suggests the great potential of β-Ga2O3 memory for multilevel storage application.

Effects of Thickness on Resistance Switching Properties of ZnMn2O4 Films Deposited by Magnetron Sputtering

2014 ◽  
Vol 941-944 ◽  
pp. 1275-1278
Author(s):  
Hua Wang ◽  
Zhi Da Li ◽  
Ji Wen Xu ◽  
Yu Pei Zhang ◽  
Ling Yang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Random Access ◽  
Random Access Memory ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Si Substrate ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Resistance Random Access Memory

ZnMn2O4films for resistance random access memory (RRAM) were fabricated on p-Si substrate by magnetron sputtering. The effects of thickness onI-Vcharacteristics, resistance switching behavior and endurance characteristics of ZnMn2O4films were investigated. The ZnMn2O4films with a structure of Ag/ZnMn2O4/p-Si exhibit bipolar resistive switching behavior. With the increase of thickness of ZnMn2O4films from 0.83μm to 2.3μm, both theVONand the number of stable repetition switching cycle increase, but theRHRS/RLRSratio decrease, which indicated that the ZnMn2O4films with a thickness of 0.83μm has the biggestRHRS/RLRSratio and the lowestVONandVOFF, but the worst endurance characteristics.

Resistance random access memory switching mechanism

2007 ◽  
Vol 101 (2) ◽  
pp. 024517 ◽  
Author(s):  
Sheng T. Hsu ◽  
Tingkai Li ◽  
Nobuyoshi Awaya
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Switching Mechanism ◽  
Memory Switching ◽  
Resistance Random Access Memory

Performance and characteristics of double layer porous silicon oxide resistance random access memory

2013 ◽  
Vol 102 (25) ◽  
pp. 253509 ◽  
Author(s):  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
Rui Zhang ◽  
Ting-Chang Chang ◽  
J. C. Lou ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Double Layer ◽  
Silicon Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory

Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

2014 ◽  
Vol 35 (6) ◽  
pp. 630-632 ◽  
Author(s):  
Rui Zhang ◽  
Tai-Fa Young ◽  
Min-Chen Chen ◽  
Hsin-Lu Chen ◽  
Shu-Ping Liang ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory
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