Switching mechanism of Al/La1−xSrxMnO3 resistance random access memory. I. Oxygen vacancy formation in perovskites

RSC Advances ◽  
2015 ◽  
Vol 5 (124) ◽  
pp. 102772-102779 ◽  
Author(s):  
Nodo Lee ◽  
Yves Lansac ◽  
Hyunsang Hwang ◽  
Yun Hee Jang
Keyword(s):  
Oxygen Vacancy ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Vacancy Formation ◽  
Access Memory ◽  
Half Metallic ◽  
Switching Mechanism ◽  
Resistance Random Access Memory ◽  
Oxygen Vacancy Formation

The oxygen vacancy formation in half-metallic perovskite LSMO itself plays an interesting role in the resistive switching.

Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory

2016 ◽  
Vol 37 (4) ◽  
pp. 408-411 ◽  
Author(s):  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
Ting-Chang Chang ◽  
Rui Zhang ◽  
Tong Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Switching Mechanism ◽  
Resistance Random Access Memory ◽  
Resistive Switching Mechanism

Resistance random access memory switching mechanism

2007 ◽  
Vol 101 (2) ◽  
pp. 024517 ◽  
Author(s):  
Sheng T. Hsu ◽  
Tingkai Li ◽  
Nobuyoshi Awaya
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Switching Mechanism ◽  
Memory Switching ◽  
Resistance Random Access Memory

Design principles of tuning oxygen vacancy diffusion in SrZrO3 for resistance random access memory

2015 ◽  
Vol 3 (16) ◽  
pp. 4081-4085 ◽  
Author(s):  
Zhonglu Guo ◽  
Linggang Zhu ◽  
Jian Zhou ◽  
Zhimei Sun
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Vacancies ◽  
Random Access ◽  
Random Access Memory ◽  
Vacancy Diffusion ◽  
Access Memory ◽  
Promising Candidate ◽  
Resistance Random Access Memory ◽  
Non Volatile Memory ◽  
Oxygen Vacancy Diffusion

Resistance random access memory (RRAM) is known to be a promising candidate for next generation non-volatile memory devices, in which the diffusion of oxygen vacancies plays a key role in resistance switching.

Adjustable built-in resistor on oxygen-vacancy-rich electrode-capped resistance random access memory

2016 ◽  
Vol 9 (10) ◽  
pp. 104201 ◽  
Author(s):  
Chih-Hung Pan ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
Tian-Jian Chu ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory

Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory

2015 ◽  
Vol 106 (21) ◽  
pp. 213505 ◽  
Author(s):  
Yi-Ting Tseng ◽  
Tsung-Ming Tsai ◽  
Ting-Chang Chang ◽  
Chih-Cheng Shih ◽  
Kuan-Chang Chang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Resistance Random Access Memory ◽  
Current Compliance

Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory

2012 ◽  
Vol 101 (24) ◽  
pp. 243503 ◽  
Author(s):  
Moon-Seok Kim ◽  
Young Hwan Hwang ◽  
Sungho Kim ◽  
Zheng Guo ◽  
Dong-Il Moon ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Vacancy Concentration ◽  
Random Access ◽  
Random Access Memory ◽  
Oxygen Vacancy Concentration ◽  
Access Memory ◽  
Resistance Random Access Memory
Sign in / Sign up

Export Citation Format

Share Document