Effects of Thickness Effect and Rapid Thermal Annealing on pH Sensing Characteristics of Thin HfO2Films Formed by Atomic Layer Deposition

2011 ◽  
Vol 50 (10S) ◽  
pp. 10PG03 ◽  
Author(s):  
Tseng-Fu Lu ◽  
Hao-Chun Chuang ◽  
Jer-Chyi Wang ◽  
Chia-Ming Yang ◽  
Pei-Chun Kuo ◽  
...  
2020 ◽  
Vol 46 (9) ◽  
pp. 13033-13039 ◽  
Author(s):  
Xing-Tao Xue ◽  
Yang Gu ◽  
Hong-Ping Ma ◽  
Cheng-Zhou Hang ◽  
Jia-Jia Tao ◽  
...  

2014 ◽  
Vol 665 ◽  
pp. 136-139 ◽  
Author(s):  
Li Feng Liu ◽  
Wei Bing Zhang ◽  
Yi Ran Wang ◽  
Wen Jia Ma ◽  
Guo Hui Wang ◽  
...  

HfAlOx based RRAM devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3. The effect of rapid thermal annealing (RTA) on the resistive switching uniformity of HfAlOx based RRAM devices was investigated. Compared to the as-deposited devices, the resistive switching uniformity of HfAlOx based RRAM devices after RTA treatment are remarkably improved. The uniformity improvement of HfAlOx based RRAM after RTA treatment is related to microstructure change in the resistive switching film.


2013 ◽  
Vol 577 ◽  
pp. 340-344 ◽  
Author(s):  
Shang-Bin Zhu ◽  
Yang Geng ◽  
Hong-Liang Lu ◽  
Yuan Zhang ◽  
Qing-Qing Sun ◽  
...  

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