Interfacial Control and Modulation of Band Alignment of Atomic Layer Deposition-Derived HfO2/Si Gate Stack by Rapid Thermal Annealing

2014 ◽  
Vol 6 (12) ◽  
pp. 2652-2658 ◽  
Author(s):  
H. H. Wei ◽  
G. He ◽  
M. Liu ◽  
Y. M. Liu ◽  
M. Zhang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Atomic Layer ◽  
Band Alignment ◽  
Gate Stack ◽  
Layer Deposition

Effect of rapid thermal annealing on the properties of zinc tin oxide films prepared by plasma-enhanced atomic layer deposition

2020 ◽  
Vol 46 (9) ◽  
pp. 13033-13039 ◽  
Author(s):  
Xing-Tao Xue ◽  
Yang Gu ◽  
Hong-Ping Ma ◽  
Cheng-Zhou Hang ◽  
Jia-Jia Tao ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Tin Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Zinc Tin Oxide ◽  
Tin Oxide Films

Effects of Thickness Effect and Rapid Thermal Annealing on pH Sensing Characteristics of Thin HfO2Films Formed by Atomic Layer Deposition

2011 ◽  
Vol 50 (10S) ◽  
pp. 10PG03 ◽  
Author(s):  
Tseng-Fu Lu ◽  
Hao-Chun Chuang ◽  
Jer-Chyi Wang ◽  
Chia-Ming Yang ◽  
Pei-Chun Kuo ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Atomic Layer ◽  
Thickness Effect ◽  
Ph Sensing ◽  
Layer Deposition ◽  
Sensing Characteristics

Effect of Rapid Thermal Annealing on Resistive Switching Uniformity of HfAlOx Based RRAM Devices

2014 ◽  
Vol 665 ◽  
pp. 136-139 ◽  
Author(s):  
Li Feng Liu ◽  
Wei Bing Zhang ◽  
Yi Ran Wang ◽  
Wen Jia Ma ◽  
Guo Hui Wang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Microstructure Change ◽  
Layer Deposition

HfAlOx based RRAM devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3. The effect of rapid thermal annealing (RTA) on the resistive switching uniformity of HfAlOx based RRAM devices was investigated. Compared to the as-deposited devices, the resistive switching uniformity of HfAlOx based RRAM devices after RTA treatment are remarkably improved. The uniformity improvement of HfAlOx based RRAM after RTA treatment is related to microstructure change in the resistive switching film.

Effects of rapid thermal annealing on Hf-doped ZnO films grown by atomic layer deposition

2013 ◽  
Vol 577 ◽  
pp. 340-344 ◽  
Author(s):  
Shang-Bin Zhu ◽  
Yang Geng ◽  
Hong-Liang Lu ◽  
Yuan Zhang ◽  
Qing-Qing Sun ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Atomic Layer ◽  
Zno Films ◽  
Layer Deposition ◽  
Doped Zno

scholarly journals Stable p-type ZnO films grown by atomic layer deposition on GaAs substrates and treated by post-deposition rapid thermal annealing

2011 ◽  
Vol 519 (16) ◽  
pp. 5558-5561 ◽  
Author(s):  
Yung-Chen Cheng ◽  
Ying-Shen Kuo ◽  
Yun-Hsiu Li ◽  
Jing-Jong Shyue ◽  
Miin-Jang Chen
Keyword(s):  
Atomic Layer Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Atomic Layer ◽  
Zno Films ◽  
Gaas Substrates ◽  
Layer Deposition ◽  
P Type ◽  
Post Deposition
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