Si1-yGeyor Ge1-zSnzSource/Drain Stressors on Strained Si1-xGex-Channel P-Type Field-Effect Transistors: A Technology Computer-Aided Design Study

2013 ◽  
Vol 52 (4S) ◽  
pp. 04CC01 ◽  
Author(s):  
Geert Eneman ◽  
An De Keersgieter ◽  
Liesbeth Witters ◽  
Jerome Mitard ◽  
Benjamin Vincent ◽  
...  
Keyword(s):  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Design Study ◽  
Computer Aided ◽  
P Type ◽  
Aided Design

scholarly journals Random Dopant Fluctuation-Induced Variability in n-Type Junctionless Dual-Metal Gate FinFETs

Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 282 ◽  
Author(s):  
Liang Dai ◽  
Weifeng Lü ◽  
Mi Lin
Keyword(s):  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Voltage ◽  
Metal Gate ◽  
Random Dopant Fluctuation ◽  
Computer Aided ◽  
Dual Metal ◽  
Aided Design ◽  
Random Dopant

We investigate the effect of random dopant fluctuation (RDF)-induced variability in n-type junctionless (JL) dual-metal gate (DMG) fin field-effect transistors (FinFETs) using a 3D computer-aided design simulation. We show that the drain voltage (VDS) has a significant impact on the electrostatic integrity variability caused by RDF and is dependent on the ratio of gate lengths. The RDF-induced variability also increases as the length of control gate near the source decreases. Our simulations suggest that the proportion of the gate metal near the source to the entire gate should be greater than 0.5.

scholarly journals Investigation on the Hump Behavior of Gate-Normal Nanowire Tunnel Field-Effect Transistors (NWTFETs)

2020 ◽  
Vol 10 (24) ◽  
pp. 8880
Author(s):  
Min Woo Kang ◽  
Woo Young Choi
Keyword(s):  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Gate Insulator ◽  
Radius Of Curvature ◽  
Computer Aided ◽  
Simulation Results ◽  
Tcad Simulation ◽  
Aided Design

The hump behavior of gate-normal nanowire tunnel field-effect transistors (NWTFETs) is investigated by using a three-dimensional technology computer-aided design (TCAD) simulation. The simulation results show that the hump behavior degrades the subthreshold swing (SS) and on-current (Ion) because the corners and sides of nanowires (NWs) have different surface potentials. The hump behavior can be successfully suppressed by increasing the radius of curvature (R) of NWs and reducing gate insulator thickness (Tins).

scholarly journals Electrostatic Discharge Characteristics of SiGe Source/Drain PNN Tunnel FET

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 454
Author(s):  
You Wang ◽  
Yu Mao ◽  
Qizheng Ji ◽  
Ming Yang ◽  
Zhaonian Yang ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Computer Aided Design ◽  
Field Effect ◽  
Electrostatic Discharge ◽  
Field Effect Transistors ◽  
Test Method ◽  
Current Path ◽  
Simulation Results ◽  
Current Characteristics ◽  
Aided Design

Gate-grounded tunnel field effect transistors (ggTFETs) are considered as basic electrostatic discharge (ESD) protection devices in TFET-integrated circuits. ESD test method of transmission line pulse is used to deeply analyze the current characteristics and working mechanism of Conventional TFET ESD impact. On this basis, a SiGe Source/Drain PNN (P+N+N+) tunnel field effect transistors (TFET) was proposed, which was simulated by Sentaurus technology computer aided design (TCAD) software. Simulation results showed that the trigger voltage of SiGe PNN TFET was 46.3% lower, and the failure current was 13.3% higher than Conventional TFET. After analyzing the simulation results, the parameters of the SiGe PNN TFET were optimized. The single current path of the SiGe PNN TFET was analyzed and explained in the case of gate grounding.

scholarly journals Technology Computer Aided Design Study of GaN MISFET With Double P-Buried Layers

IEEE Access ◽  
2019 ◽  
Vol 7 ◽  
pp. 87574-87581
Author(s):  
Ying Wang ◽  
Meng-tian Bao ◽  
Fei Cao ◽  
Jian-xiang Tang ◽  
Xin Luo
Keyword(s):  
Computer Aided Design ◽  
Design Study ◽  
Computer Aided ◽  
Buried Layers ◽  
Aided Design

scholarly journals Computer-aided design software for multi-stage amplifiers with bipolar transistors and field effect

2019 ◽  
Vol 1418 ◽  
pp. 012001 ◽  
Author(s):  
L Ramírez-Carvajal ◽  
G Sierra-Peñaranda ◽  
K Puerto-López ◽  
D Guevara-Ibarra
Keyword(s):  
Computer Aided Design ◽  
Field Effect ◽  
Bipolar Transistors ◽  
Multi Stage ◽  
Computer Aided ◽  
Design Software ◽  
Aided Design

scholarly journals COMPUTER-AIDED DESIGN STUDY OF HYPERMIXING NOZZLES

1980 ◽  
Author(s):  
L.A. MEFFERD ◽  
P.M. BEVILAQUA
Keyword(s):  
Computer Aided Design ◽  
Design Study ◽  
Computer Aided ◽  
Aided Design
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