Investigation of the properties of deep-level defect in Cu(In,Ga)Se2thin films by steady-state photocapacitance and time-resolved photoluminescence measurements

2015 ◽  
Vol 54 (4S) ◽  
pp. 04DR02 ◽  
Author(s):  
Xiaobo Hu ◽  
Takeaki Sakurai ◽  
Akimasa Yamada ◽  
Shogo Ishizuka ◽  
Shigeru Niki ◽  
...  
Keyword(s):  
Steady State ◽  
Deep Level ◽  
Deep Level Defect ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques

2006 ◽  
Vol 527-529 ◽  
pp. 461-464 ◽  
Author(s):  
Aurelie Thuaire ◽  
Anne Henry ◽  
Björn Magnusson ◽  
Peder Bergman ◽  
W.M. Chen ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electronic Structure ◽  
Low Temperature ◽  
Deep Level ◽  
Temperature Dependent ◽  
Deep Level Defect ◽  
Time Resolved ◽  
Optical And Electronic Properties ◽  
Time Resolved Photoluminescence ◽  
Temperature Dependent Photoluminescence

A detailed investigation of the optical and electronic properties of the deep-level defect UD-4 is reported. This defect has recently been observed in 4H semi-insulating silicon carbide, but has hardly been studied yet. Both low temperature and temperature-dependent photoluminescence were collected from the defect. Zeeman spectroscopy measurements were performed as well as time-resolved photoluminescence.

Steady state and time-resolved photoluminescence properties of alternating polyfluorene copolymers

2003 ◽  
Vol 135-136 ◽  
pp. 387-388 ◽  
Author(s):  
A. Charas ◽  
J. Morgado ◽  
L. Alcácer ◽  
J.M.G. Martinho ◽  
F. Cacialli
Keyword(s):  
Steady State ◽  
Photoluminescence Properties ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Tuning the excited-state deactivation pathways of dinuclear ruthenium(ii) 2,2′-bipyridine complexes through bridging ligand design

2020 ◽  
Vol 49 (24) ◽  
pp. 8096-8106 ◽  
Author(s):  
Simon Cerfontaine ◽  
Ludovic Troian-Gautier ◽  
Sara A. M. Wehlin ◽  
Frédérique Loiseau ◽  
Emilie Cauët ◽  
...  
Keyword(s):  
Excited State ◽  
Steady State ◽  
Variable Temperature ◽  
Ligand Design ◽  
Binuclear Complexes ◽  
Time Resolved ◽  
Bridging Ligand ◽  
Dinuclear Ruthenium ◽  
Photophysical Study ◽  
Time Resolved Photoluminescence

A detailed photophysical study of binuclear complexes was performed using steady-state and time-resolved photoluminescence measurements at variable temperature. The results were compared with the prototypical [Ru(bpy)3]2+.

Steady state and time resolved photoluminescence properties of CuInS2/ZnS quantum dots in solutions and in solid films

2015 ◽  
Vol 167 ◽  
pp. 333-338 ◽  
Author(s):  
Nikolaos Droseros ◽  
Kostas Seintis ◽  
Mihalis Fakis ◽  
Spiros Gardelis ◽  
Androula G. Nassiopoulou
Keyword(s):  
Quantum Dots ◽  
Steady State ◽  
Photoluminescence Properties ◽  
Time Resolved ◽  
Solid Films ◽  
Time Resolved Photoluminescence

Improve Persistent Luminescence in Pressure-tuned CsPbBr3 Nanocrystals by Ce3+ Doping

2021 ◽  
Author(s):  
Bao Liu ◽  
Meng Tian ◽  
Yang Gao ◽  
Pengyu Zhou ◽  
Kailin Chi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Steady State ◽  
Photoluminescence Spectroscopy ◽  
Persistent Luminescence ◽  
Time Resolved ◽  
Novel Strategy ◽  
Time Resolved Photoluminescence ◽  
Kinetics Of

The pressure-dependent photoluminescence kinetics of CsPbBr3:Ce quantum dots was investigated by steady-state and time-resolved photoluminescence spectroscopy. Here, we propose a novel strategy to improve the persistent luminescence of CsPbBr3 quantum...

Deep Level Formation in Undoped and Oxygen-Doped GaN

2000 ◽  
Vol 639 ◽  
Author(s):  
J. M. Gregie ◽  
R. Y. Korotkov ◽  
B. W. Wessels
Keyword(s):  
Density Functional Theory ◽  
Steady State ◽  
Vapor Phase ◽  
Density Functional ◽  
Deep Level ◽  
Deep Level Defect ◽  
Functional Theory ◽  
Organic Vapor ◽  
Metal Organic ◽  
Formation Energies

ABSTRACTDeep level defects in oxygen doped GaN grown by metal-organic vapor phase epitaxy were investigated. Using steady-state photocapacitance (SSPC) spectroscopy, three deep levels with optical ionization energies of 1.0, 1.4, and 3.25 eV were observed in both nominally undoped and oxygen-doped samples. The total deep level defect concentrations ranged from 6 × 1015 cm-3 in undoped films to 3 × 1016 cm-3 in oxygen-doped films. The concentration of the 3.25 eV level defect increased upon oxygen doping, while the concentrationof the 1.0 and 1.4 eV levels were essentially dopant independent. From the measured concentrations the formation energies of the defects were calculated and compared to energies calculated using density functional theory.

Time-resolved photoluminescence and steady-state optical investigations of a Zn1−x Cd x Se/ZnSe quantum well

1995 ◽  
Vol 17 (11-12) ◽  
pp. 1435-1440 ◽  
Author(s):  
E. Deleporte ◽  
J. Martinez-Pastor ◽  
A. Filoramo ◽  
D. Batovski ◽  
Ph. Roussignol ◽  
...  
Keyword(s):  
Steady State ◽  
Quantum Well ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Interplay of structural and compositional effects on carrier recombination in mixed-halide perovskites

RSC Advances ◽  
2016 ◽  
Vol 6 (90) ◽  
pp. 86947-86954 ◽  
Author(s):  
Eric M. Talbert ◽  
Holly F. Zarick ◽  
Noah J. Orfield ◽  
Wei Li ◽  
William R. Erwin ◽  
...  
Keyword(s):  
Steady State ◽  
Charge Transport ◽  
Grain Structure ◽  
Lead Iodide ◽  
Time Resolved ◽  
Carrier Recombination ◽  
Halide Perovskites ◽  
Planar Films ◽  
Methylammonium Lead Iodide ◽  
Time Resolved Photoluminescence

We investigate the effect of grain structure and bromide content on charge transport in methylammonium lead iodide/bromide perovskites by probing the steady-state and time-resolved photoluminescence of planar films with distinct morphologies.

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