Passivation properties of aluminum oxide films deposited by mist chemical vapor deposition for solar cell applications

2015 ◽  
Vol 54 (8S1) ◽  
pp. 08KD25 ◽  
Author(s):  
Shohei Miki ◽  
Koji Iguchi ◽  
Sho Kitano ◽  
Koki Hayakashi ◽  
Yasushi Hotta ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Solar Cell ◽  
Aluminum Oxide ◽  
Vapor Deposition ◽  
Oxide Films ◽  
Chemical Vapor

Effect of water vapor on the growth of aluminum oxide films by low pressure chemical vapor deposition

1993 ◽  
Vol 230 (2) ◽  
pp. 156-159 ◽  
Author(s):  
J.S. Kim ◽  
H.A. Marzouk ◽  
P.J. Reucroft ◽  
J.D. Robertson ◽  
C.E. Hamrin
Keyword(s):  
Chemical Vapor Deposition ◽  
Water Vapor ◽  
Aluminum Oxide ◽  
Vapor Deposition ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Effect Of Water ◽  
Pressure Chemical

NaCl-Type Oxide Films Prepared by Plasma-Enhanced Metalorganic Chemical Vapor Deposition

1993 ◽  
Vol 32 (Part 2, No. 10A) ◽  
pp. L1448-L1450 ◽  
Author(s):  
Eiji Fujii ◽  
Atsushi Tomozawa ◽  
Satoru Fujii ◽  
Hideo Torii ◽  
Masumi Hattori ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Metalorganic Chemical

The SiNx films process research by plasma-enhanced chemical vapor deposition in crystalline silicon solar cells

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744101 ◽  
Author(s):  
Bitao Chen ◽  
Yingke Zhang ◽  
Qiuping Ouyang ◽  
Fei Chen ◽  
Xinghua Zhan ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Solar Cell ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Double Layers ◽  
Crystalline Silicon Solar Cell

SiNx thin film has been widely used in crystalline silicon solar cell production because of the good anti-reflection and passivation effect. We can effectively optimize the cells performance by plasma-enhanced chemical vapor deposition (PECVD) method to change deposition conditions such as temperature, gas flow ratio, etc. In this paper, we deposit a new layer of SiNx thin film on the basis of double-layers process. By changing the process parameters, the compactness of thin films is improved effectively. The NH3passivation technology is augmented in a creative way, which improves the minority carrier lifetime. In sight of this, a significant increase is generated in the photoelectric performance of crystalline silicon solar cell.

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