High density frame transfer image sensor

1982 ◽  
Author(s):  
G. A. Beck ◽  
M. G. Collet ◽  
J. A. A. van Gils ◽  
A. J. Klinkhamer ◽  
P. L. Peek ◽  
...  
Keyword(s):  
2021 ◽  
Author(s):  
Mei-Chien Lu

Abstract Hybrid bonding has been explored for more than a decade and implemented recently in high volume production at wafer-to-wafer level for image sensor applications to enable high performance chip-stacking architectures with ultra-high-density chip-to-chip interconnect. The feasibility of sub-micron hybrid bond pitch leading to ultra-high-density chip-to-chip interconnect has been demonstrated due to the elimination of solder bridging issues from microbump method. Hybrid bonding has also been actively considered for logic and memory chip-stacking, chiplets, and heterogeneous integration in general but encountering additional challenges for bonding at die-to-wafer or die-to-die level. Overlay precision, throughput, wafer dicing are among the main causes. Widening the process margin against overlay error by designing innovative hybrid bonding pad structure is highly desirable. This work proposes a method to evaluate these hybrid bonding pad structure designs and to assess the potential performance metrics by analyzing interfacial characteristics at design phase. The bonding areas and ratios of copper-copper, copper-dielectric, and dielectric-dielectric are the proposed key parameters. The correlation between bonding area ratios and overlay errors can provide insights on the sensitivity to process margins. Nonetheless, the impact of copper recess or protrusion associated with bonding area ratios are also highlighted. The proposed method is demonstrated by examining and analyzing the hybrid bonding pad structure design concepts from a few cases reported in literatures as examples. Concerns are identified for elaboration in future designs and optimizations.


SMPTE Journal ◽  
1987 ◽  
Vol 96 (12) ◽  
pp. 1186-1188
Author(s):  
W. C. Chang ◽  
T. J. Tredwell ◽  
E. G. Stevens ◽  
D. N. Nichols

2021 ◽  
pp. 2000280
Author(s):  
Xiao-Xiao Shi ◽  
Yan Chen ◽  
Hong-Lan Jiang ◽  
Du-Li Yu ◽  
Xiao-Liang Guo

1983 ◽  
Vol 22 (S1) ◽  
pp. 109 ◽  
Author(s):  
G. A. Beck ◽  
M. G. Collet ◽  
J. A. A. van Gils ◽  
A. J. Klinkhamer ◽  
H. L. Peek ◽  
...  
Keyword(s):  

2010 ◽  
Vol 3 (1) ◽  
pp. 1-6 ◽  
Author(s):  
Sanghun Jeon ◽  
Sungho Park ◽  
Ihun Song ◽  
Ji-Hyun Hur ◽  
Jaechul Park ◽  
...  

2020 ◽  
Vol 7 (12) ◽  
pp. 1902205
Author(s):  
Zimei Cao ◽  
Kaiyang He ◽  
Wei Xiong ◽  
Yan Chen ◽  
Xianbo Qiu ◽  
...  

Sensors ◽  
2019 ◽  
Vol 19 (3) ◽  
pp. 536 ◽  
Author(s):  
Hosung Kang ◽  
Wajahat Abbasi ◽  
Seong-Woo Kim ◽  
Jungsuk Kim

This paper presents a fully integrated photodiode-based low-power and low-mismatch stimulator for a subretinal prosthesis. It is known that a subretinal prosthesis achieves 1600-pixel stimulators on a limited single-chip area that is implanted beneath the bipolar cell layer. However, the high-density pixels cause high power dissipation during stimulation and high fabrication costs because of special process technologies such as the complementary metal-oxide semiconductor CMOS image sensor process. In addition, the many residual charges arising from the high-density pixel stimulation have deleterious effects, such as tissue damage and electrode corrosion, on the retina tissue. In this work, we adopted a switched-capacitor current mirror technique for the single-pixel stimulator (SPStim) that enables low power consumption and low mismatch in the subretinal device. The customized P+/N-well photodiode used to sense the incident light in the SPStim also reduces the fabrication cost. The 64-pixel stimulators are fabricated in a standard 0.35-μm CMOS process along with a global digital controller, which occupies a chip area of 4.3 × 3.2 mm2 and are ex-vivo demonstrated using a dissected pig eyeball. According to measured results, the SPStim accomplishes a maximum biphasic pulse amplitude of 143 μA, which dissipates an average power of 167 μW in a stimulation period of 5 ms, and an average mismatch of 1.12 % between the cathodic and anodic pulses.


2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Takamasa Ando ◽  
Tatsuya Nakamura ◽  
Toshiya Fujii ◽  
Teruhiro Shiono ◽  
Tasuku Nakamura ◽  
...  

AbstractA revolution in functional brain imaging techniques is in progress in the field of neurosciences. Optical imaging techniques, such as high-density diffuse optical tomography (HD-DOT), in which source-detector pairs of probes are placed on subjects’ heads, provide better portability than conventional functional magnetic resonance imaging (fMRI) equipment. However, these techniques remain costly and can only acquire images at up to a few measurements per square centimetre, even when multiple detector probes are employed. In this study, we demonstrate functional brain imaging using a compact and affordable setup that employs nanosecond-order pulsed ordinary laser diodes and a time-extracted image sensor with superimposition capture of scattered components. Our technique can simply and easily attain a high density of measurement points without requiring probes to be attached, and can directly capture two-dimensional functional brain images. We have demonstrated brain activity imaging using a phantom that mimics the optical properties of an adult human head, and with a human subject, have measured cognitive brain activation while the subject is solving simple arithmetical tasks.


1988 ◽  
Author(s):  
Masafumi Kimata ◽  
Masahiko Denda ◽  
Naoki Yutani ◽  
Shuhei Iwade ◽  
Natsuro Tsubouchi

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