Abstract
A Silicon based Vertical Dual metal Double gate Tunnel FET (Si-VDMDGTFET) has been proposed and simulated in Sentaurus TCAD tool with improved DC and analog/RF characteristics. The vertical In-line tunneling dominates in the proposed device which results in better subthreshold slope (SS). The vertical in-line tunneling tunes the tunneling barrier and eventually controls the ON current. The dual metal gate and the heterogeneous gate stack oxide within the proposed device design gives the mouldability for controlling and improving the DC characteristics such as ON current, OFF current. The analog/RF behaviour of the proposed device has been calculated and compared with conventional lateral Silicon based dual metal double gate Tunnel FET furthermore it is seen that the proposed device outperforms the conventional lateral device.
Hetero - Gate Oxide Dual Metal Vertical Tunnel FET