scholarly journals The Singularity Paramagnetic Peak of Bi0.3Sb1.7Te3 with p-type Surface State

2022 ◽  
Vol 17 (1) ◽  
Author(s):  
Shiu-Ming Huang ◽  
Pin-Cing Wang ◽  
Pin-Cyuan Chen ◽  
Jai-Long Hong ◽  
Cheng-Maw Cheng ◽  
...  
Keyword(s):  
Magnetic Susceptibility ◽  
Fermi Level ◽  
Single Crystal ◽  
Temperature Variation ◽  
Surface State ◽  
Dirac Point ◽  
Magnetization Measurement ◽  
Spin Texture ◽  
P Type ◽  
Susceptibility Curve

AbstractThe magnetization measurement was performed in the Bi0.3Sb1.7Te3 single crystal. The magnetic susceptibility revealed a paramagnetic peak independent of the experimental temperature variation. It is speculated to be originated from the free-aligned spin texture at the Dirac point. The ARPES reveals that the Fermi level lies below the Dirac point. The Fermi wavevector extracted from the de Haas–van Alphen oscillation is consistent with the energy dispersion in the ARPES. Our experimental results support that the observed paramagnetic peak in the susceptibility curve does not originate from the free-aligned spin texture at the Dirac point.

Electrical Properties of Epitaxial Silicide-Silicon Interfaces

1985 ◽  
Vol 54 ◽  
Author(s):  
R. T. Tung ◽  
A. F. J. Levi ◽  
J. M. Gibson ◽  
K. K. Ng ◽  
A. Chantre
Keyword(s):  
Fermi Level ◽  
Single Crystal ◽  
Schottky Barrier ◽  
Surface Region ◽  
Ideal Behavior ◽  
Near Surface ◽  
Barrier Heights ◽  
Transmission Electron ◽  
Current Voltage ◽  
P Type

ABSTRACTThe Schottky barrier heights of single crystal NiSi2 layers on Si(111) have been studied by current-voltage, capacitance-voltage and activation energy techniques. Near ideal behavior is found for Schottky barriers grown on substrates cleaned at ∼820°C in ultrahigh vacuum. The Fermi level positions at the interfaces of single crystal type A and type B NiSi2 are shown to differ by ∼0.14 eV. Transmission electron microscopy demonstrated the epitaxial perfection of these suicide layers. At a cleaning temperature of 1050° C, the near surface region of lightly doped n-type Si was converted to p-type. The presence of a p-n junction was directly revealed by spreading resistance measurements and resulted in a high apparent Schottky barrier height (≥0.75 eV) which no longer bears immediate relationship to the interface Fermi level position.

Broad temperature plateau for high ZTs in heavily doped p-type SnSe single crystals

2016 ◽  
Vol 9 (2) ◽  
pp. 454-460 ◽  
Author(s):  
Kunling Peng ◽  
Xu Lu ◽  
Heng Zhan ◽  
Si Hui ◽  
Xiaodan Tang ◽  
...  
Keyword(s):  
Fermi Level ◽  
Single Crystal ◽  
Single Crystals ◽  
Carrier Concentration ◽  
Heavily Doped ◽  
P Type ◽  
Temperature Plateau

The increased number of carrier pockets near the Fermi level and the optimized carrier concentration in doped SnSe single crystal can lead to a high averageZTave∼ 1.2 from 300 K to 800 K and a peakZTmaxvalue in excess of 2.0 at 800 K along the crystallographicb-axis.

The magnetic susceptibility of an MnO single crystal

1959 ◽  
Vol 20 (2-3) ◽  
pp. 424-426 ◽  
Author(s):  
T.R. McGuire ◽  
R.J. Happel
Keyword(s):  
Magnetic Susceptibility ◽  
Single Crystal

scholarly journals Single Crystal Growth and Physical Properties of Pyroxene CoGeO3

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 378
Author(s):  
Li Zhao ◽  
Zhiwei Hu ◽  
Hanjie Guo ◽  
Christoph Geibel ◽  
Hong-Ji Lin ◽  
...  
Keyword(s):  
High Pressure ◽  
Magnetic Properties ◽  
Magnetic Susceptibility ◽  
Crystal Growth ◽  
Physical Properties ◽  
Single Crystal ◽  
Single Crystals ◽  
Magnetic Moments ◽  
Single Crystal Growth ◽  
The Impact

We report on the synthesis and physical properties of cm-sized CoGeO3 single crystals grown in a high pressure mirror furnace at pressures of 80 bar. Direction dependent magnetic susceptibility measurements on our single crystals reveal highly anisotropic magnetic properties that we attribute to the impact of strong single ion anisotropy appearing in this system with TN∼33.5 K. Furthermore, we observe effective magnetic moments that are exceeding the spin only values of the Co ions, which reveals the presence of sizable orbital moments in CoGeO3.

Is the Observed Photoemission Peak near the Fermi Level on the (100) Face of Mo a Surface State?

1977 ◽  
Vol 38 (20) ◽  
pp. 1171-1174 ◽  
Author(s):  
C. Noguera ◽  
D. Spanjaard ◽  
D. Jepsen ◽  
Y. Ballu ◽  
C. Guillot ◽  
...  
Keyword(s):  
Fermi Level ◽  
Surface State

Ternary Antimonides RE4T7Sb6 (RE=Gd–Lu; T =Ru, Rh) with Cubic U4Re7Si6-type Structure

2013 ◽  
Vol 68 (9) ◽  
pp. 971-978 ◽  
Author(s):  
Inga Schellenberg ◽  
Ute Ch. Rodewald ◽  
Christian Schwickert ◽  
Matthias Eul ◽  
Rainer Pöttgen
Keyword(s):  
Magnetic Susceptibility ◽  
Single Crystal ◽  
Magnetic Moment ◽  
Induction Furnace ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
X Ray ◽  
Antiferromagnetic Ordering ◽  
Arc Melting ◽  
Intermediate Valent

The ternary antimonides RE4T7Sb6 (RE=Gd-Lu; T =Ru, Rh) have been synthesized from the elements by arc-melting and subsequent annealing in an induction furnace. The samples have been characterized by powder X-ray diffraction. Four structures were refined on the basis of single-crystal X-ray diffractometer data: U4Re7Si6 type, space group Im3m with a=862.9(2) pm, wR2=0.0296, 163 F2 values for Er4Ru7Sb6; a=864.1(1) pm, wR2=0.1423, 153 F2 values for Yb4Ru7Sb6; a=872.0(2) pm, wR2=0.0427, 172 F2 values for Tb4Rh7Sb6; and a=868.0(2) pm, wR2=0.0529, 154 F2 values for Er4Rh7Sb6, with 10 variables per refinement. The structures have T1@Sb6 octahedra and slightly distorted RE@T26Sb6 cuboctahedra as building units. The distorted cuboctahedra are condensed via all trapezoidal faces, and this network leaves octahedral voids for the T1 atoms. The ruthenium-based series of compounds was studied by temperature-dependent magnetic susceptibility measurements. Lu4Ru7Sb6 is Pauli-paramagnetic. The antimonides RE4Ru7Sb6 with RE=Dy, Ho, Er, and Tm show Curie-Weiss paramagnetism. Antiferromagnetic ordering occurs at 10.0(5), 5.1(5) and 4.0(5) K for Dy4Ru7Sb6, Ho4Ru7Sb6 and Er4Ru7Sb6, respectively, while Tm4Ru7Sb6 remains paramagnetic. Yb4Ru7Sb6 is an intermediate-valent compound with a reduced magnetic moment of 3.71(1) μB per Yb as compared to 4.54 μB for a free Yb3+ ion

Magnetic susceptibility measurements on single crystal

1997 ◽  
Vol 9 (47) ◽  
pp. 10475-10484 ◽  
Author(s):  
L D Cussen ◽  
M F Ling ◽  
T J Hicks ◽  
R O Piltz ◽  
Y Tsunoda
Keyword(s):  
Magnetic Susceptibility ◽  
Single Crystal

First-Principles Study on the Conductive Properties of P-Doped ZnO

2009 ◽  
Vol 79-82 ◽  
pp. 1253-1256 ◽  
Author(s):  
Li Guan ◽  
Qiang Li ◽  
Xu Li ◽  
Jian Xin Guo ◽  
Bo Geng ◽  
...  
Keyword(s):  
Fermi Level ◽  
Valence Band ◽  
Density Functional ◽  
Lattice Structure ◽  
Mulliken Charge ◽  
Total Density ◽  
Type Conductivity ◽  
Doped Zno ◽  
P Type ◽  
Conductive Properties

In the present paper, the lattice structure, band structure and density of state of pure and P-doped ZnO are calculated by first-principle method based on density functional theory. By analyzing the Mulliken charge overlap population and bond length, it is found that the bond of P-Zn is longer and stronger than O-Zn bond for PO-ZnO. But for PZn-ZnO, the O-P bond becomes shorter and more powerful than O-Zn bond. Also, weak O-O bonds are formed in this case. Our results show that the final total energy of PO-ZnO is lower than PZn-ZnO. The lattice structure of PO-ZnO is more stability than PZn-ZnO. For PO-ZnO, The Fermi level moves into the valence band, which expresses that the holes appear on the top of valence band and thus the PO-ZnO exhibits p-type conductivity. For PZn-ZnO, the Fermi level moves up to the conductor band and the total density of states shifts to the lower energy region, thus PZn-ZnO shows the n-type conductivity.

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