scholarly journals Design and Implementation of Coupled Line Bandpass Filter at C-Band

2020 ◽  
Author(s):  
Abhinaya M ◽  
Bhavika B ◽  
Harsh Dashora ◽  
Jitendra Kumar
Keyword(s):  
High Frequency ◽  
High Performance ◽  
Bandpass Filter ◽  
Wireless Receivers ◽  
Dielectric Resonators ◽  
Planar Technology ◽  
Coupled Line ◽  
Design And Implementation ◽  
Radio Frequency Filters ◽  
Lumped Elements

A Radio frequency filters having applications that demand high performance and intends to contribute in system’s size and cost must be achieved by a different approach. That might be in using an advanced material, planar technology or dielectric resonators, as filter involves in many fields like wireless receivers, transmitters and in multiple locations inside an RF system to shed noise. This paper primarily demonstrates how bandpass filter exhibits itself differently when realized using lumped elements or microstrip transmission line to acquire minimum losses when transmitting high frequency signals over long or short distances in planar technology. And explains in detail to design and simulate microstrip coupled line bandpass filter.

Design and implementation of a high-performance V-band CMOS bandpass filter

2009 ◽  
Vol 52 (2) ◽  
pp. 309-316
Author(s):  
Jin-Fa Chang ◽  
Yo-Sheng Lin
Keyword(s):  
High Performance ◽  
Bandpass Filter ◽  
Design And Implementation ◽  
V Band

scholarly journals Fabrication of Compact Microstrip Line-Based Balun-Bandpass Filter with High Common-Mode Suppression

2014 ◽  
Vol 2014 ◽  
pp. 1-6
Author(s):  
Chia-Mao Chen ◽  
Shoou-Jinn Chang ◽  
Yen-Liang Pan ◽  
Cheng-Yi Chen ◽  
Cheng-Fu Yang
Keyword(s):  
High Performance ◽  
Bandpass Filter ◽  
Open Loop ◽  
Ring Resonators ◽  
Center Frequency ◽  
Coupled Line ◽  
Common Mode ◽  
New Device ◽  
Line Theory ◽  
Loop Ring

A new type of balun-bandpass filter was proposed based on the traditional coupled-line theory and folded open-loop ring resonators (OLRRs) configuration. For that, a new device with both filter-type and balun-type characteristics was investigated and fabricated. Both magnetic and electric coupling structures were implemented to provide high performance balun-bandpass responses. The fabricated balun-bandpass filters had a wide bandwidth more than 200 MHz and a low insertion loss less than 2.51 dB at a center frequency of 2.6 GHz. The differences between the two outputs were below 0.4 dB in magnitude and within 180 ± 7° in phase. Also, the balun-bandpass filter presented an excellent common-mode rejection ratio over 25 dB in the passband. An advanced design methodology had been adopted based on EM simulation for making these designed parameters of OLRRs, microstrip lines, and open stubs. The measured frequency responses agreed well with simulated ones.

The Modeling and Simulation of Mirostrip Bandpass Filter Using ADS

2011 ◽  
Vol 421 ◽  
pp. 192-195
Author(s):  
Wei Ping Li ◽  
Hui Luo ◽  
Xui Hui Guan
Keyword(s):  
High Frequency ◽  
High Speed ◽  
Bandpass Filter ◽  
Design System ◽  
Wave Band ◽  
Microstrip Filter ◽  
Frequency Wave ◽  
Lumped Element ◽  
Lumped Elements ◽  
Manufacturing Techniques

Microstrip filter is used widely in wireless communication area, especially in WLAN. Compared to the conventional manufacturing techniques using lumped element, we can get extremely better characters in high frequency wave band using microstrip lines. ADS2008 (Agilent Advanced Design System 2008) is an excellent software platform for high frequency and high speed EDA manufacturing. In this letter, the modeling of microstrip filter which works at appointed frequency is got by transforming the lumped elements to microstrip elements. Finally, the microstrip filter simulated, optimized by ADS2008.

Threshold Values Analysis of Substrate Parameters Based on MEMS Microstrip Filter

2011 ◽  
Vol 483 ◽  
pp. 745-749
Author(s):  
Gang Wang ◽  
Li Xin Xu ◽  
Ting Wang
Keyword(s):  
High Frequency ◽  
High Performance ◽  
Bandpass Filter ◽  
Filter Design ◽  
Relative Dielectric Constant ◽  
Threshold Values ◽  
Improve Performance ◽  
Microstrip Filter ◽  
Parameters Selection ◽  
Variation Property

High frequency filters are important components in microwave facilities application. With miniature volume, high performance and integratability, MEMS microstrip filter can significantly improve performance of Radio frequency system. By calculating chebyshev coupled microstrip bandpass filter design scheme, Threshold values of MEMS microstrip substrate parameters are defined to analyze dimensions variation property of MEMS microstrip filter relates with substrate parameters. Selection principle of substrate parameters for MEMS microstrip filter is presented, which indicates thickness and relative dielectric constant of substrate should not exceed the threshold values. The principle of threshold values can be applied as a guide on research and application of MEMS microstrip filter.

scholarly journals Couplinator: A simple computational tool for synthesis of multi-section coupled-line filter based on MPCM-TLM technique

2021 ◽  
pp. 1-10
Author(s):  
E. Faghand ◽  
S. Karimian ◽  
E. Mehrshahi ◽  
N. Karimian
Keyword(s):  
Comparative Analysis ◽  
Transmission Line ◽  
High Frequency ◽  
Computational Tool ◽  
Cad Tools ◽  
Coupled Line ◽  
High Frequency Structure Simulator ◽  
Transmission Line Method ◽  
Set Up ◽  
Planar Circuit

Abstract A new simple computational tool is proposed for the synthesis of multi-section coupled-line filters based on combined modified planar circuit method (MPCM) and transmission line method (TLM) analysis, referred to as MPCM-TLM. Due to its fundamentally simple architecture, the presented tool offers significantly faster optimization of coupled-line filters – for exactly the same initial simulation set-up – than other costly commercially-available tools, giving equally reliable results. Validity and accuracy of the proposed tool have been verified through the design of 3rd, 5th, and 7th order coupled-line filters and comparative analysis between results obtained from the proposed approach and the high-frequency structure simulator. A remarkable 99% time reduction in the analysis is recorded in the case of 7th order filter using the proposed tool, for almost identical results to HFSS. Therefore, it can be confidently claimed that the proposed technique can be used as a reliable alternative to existing complex, costly, processor-intensive CAD tools.

scholarly journals A RF Redundant TSV Interconnection for High Resistance Si Interposer

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 169
Author(s):  
Mengcheng Wang ◽  
Shenglin Ma ◽  
Yufeng Jin ◽  
Wei Wang ◽  
Jing Chen ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
High Frequency ◽  
High Performance ◽  
Rapid Development ◽  
Coplanar Waveguide ◽  
Equivalent Circuit Model ◽  
High Resistivity ◽  
Performance Requirements ◽  
Wave Radar ◽  
Interconnect Design

Through Silicon Via (TSV) technology is capable meeting effective, compact, high density, high integration, and high-performance requirements. In high-frequency applications, with the rapid development of 5G and millimeter-wave radar, the TSV interposer will become a competitive choice for radio frequency system-in-package (RF SIP) substrates. This paper presents a redundant TSV interconnect design for high resistivity Si interposers for millimeter-wave applications. To verify its feasibility, a set of test structures capable of working at millimeter waves are designed, which are composed of three pieces of CPW (coplanar waveguide) lines connected by single TSV, dual redundant TSV, and quad redundant TSV interconnects. First, HFSS software is used for modeling and simulation, then, a modified equivalent circuit model is established to analysis the effect of the redundant TSVs on the high-frequency transmission performance to solidify the HFSS based simulation. At the same time, a failure simulation was carried out and results prove that redundant TSV can still work normally at 44 GHz frequency when failure occurs. Using the developed TSV process, the sample is then fabricated and tested. Using L-2L de-embedding method to extract S-parameters of the TSV interconnection. The insertion loss of dual and quad redundant TSVs are 0.19 dB and 0.46 dB at 40 GHz, respectively.

Capacitor-Loaded Coupled Line Balanced Bandpass Filter

2020 ◽  
Author(s):  
Jiancheng Dong ◽  
Jin Shi ◽  
Kai Xu
Keyword(s):  
Bandpass Filter ◽  
Coupled Line

High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3Dielectric and NBE Gate Recess Technology for High Frequency Power Applications

2017 ◽  
Vol 38 (6) ◽  
pp. 771-774 ◽  
Author(s):  
Yen-Ku Lin ◽  
Shuichi Noda ◽  
Chia-Ching Huang ◽  
Hsiao-Chieh Lo ◽  
Chia-Hsun Wu ◽  
...  
Keyword(s):  
High Frequency ◽  
High Performance ◽  
High Frequency Power ◽  
Gate Recess ◽  
Frequency Power
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