Performance Analysis of TFET and VDSTFET for Low Power Application using the Work Function Engineering

We report a design of TFET which is quite different from conventional TFET. The structure of VTFET is similar to MOSFET but the conducting mechanism is completely different. Vertical TFET is designed perpendicular to the horizontal plane. The switching and carrier transportation mechanism of VTFET is based on the mechanism of the band to band tunneling through a potential barrier and vertical TFET is based on tunneling perpendicular to the device rather than a mechanism like thermionic emission unlike in MOSFET. We have designed a model for the two-dimension structure of V-TFET which consists of the dual-source and single drain. The channel among the drain and gate region is extraordinarily thin. We have plotted the transfer characteristics of V-TFET according to device parameters using TCAD. The comparison of VTFET with DSVTFET is done by using Silvaco TCAD and the effect of source doping, and work function on transfer characteristics of the device is examined by using silvaco TCAD simulations. The proposed device produces a low-off current.

TO ASSESS THE OUTCOME OF ENDOSCOPIC INTERLAY TYMPANOPLASTY IN TERTIARY CARE CENTER

Background: Chronic otitis media is an inammatory process in middle ear cleft which is treated by a common otological procedure tympanoplasty to reconstruct the tympanic membrane and to restore sound-conducting mechanism. Rigid endoscope in transcanal interlay tympanoplasty has signicant advantage as it provides magnied, and wide angle view, with better success rate and postoperative hearing gain. The Aims and objectives were to assess the outcome of endoscopic interlay tympanoplasty, in terms of graft uptake, hearing improvement and rate of complications in cases of inactive mucosal chronic suppurative otitis media. Methods: This prospective study was conducted for 1 year at our institution in 50 patients having conductive hearing loss with dry, central perforation. All patients underwent transcanal endoscopic interlay tympanoplasty and were followed up for 3months to determine the graft uptake, hearing improvement and rate of complications. Results: Graft uptake rate in the present study was found to be 98% with residual perforation as a complication in 2% patients and no other complications were encountered. Post operatively air bone gap (ABG) after 12 weeks found to be < 20 dB ABG in 84% patients. Conclusion: Endoscopic interlay tympanoplasty is a effective method with high success rate both in terms of graft uptake as well as post operative hearing improvement and can be implemented in all cases of inactive mucosal COM.

Kv1.3 voltage-gated potassium channels link cellular respiration to proliferation through a non-conducting mechanism

Cellular energy metabolism is fundamental for all biological functions. Cellular proliferation requires extensive metabolic reprogramming and has a high energy demand. The Kv1.3 voltage-gated potassium channel drives cellular proliferation. Kv1.3 channels localise to mitochondria. Using high-resolution respirometry, we show Kv1.3 channels increase oxidative phosphorylation, independently of redox balance, mitochondrial membrane potential or calcium signalling. Kv1.3-induced respiration increased reactive oxygen species production. Reducing reactive oxygen concentrations inhibited Kv1.3-induced proliferation. Selective Kv1.3 mutation identified that channel-induced respiration required an intact voltage sensor and C-terminal ERK1/2 phosphorylation site, but is channel pore independent. We show Kv1.3 channels regulate respiration through a non-conducting mechanism to generate reactive oxygen species which drive proliferation. This study identifies a Kv1.3-mediated mechanism underlying the metabolic regulation of proliferation, which may provide a therapeutic target for diseases characterised by dysfunctional proliferation and cell growth.

A Water-Dispersible Quinoid-Resonant Conducting Polymer for Organic Electronics

Developing stable and solution-processable highly conductive polymers has been the research goal in organic electronics since the first demonstration of metallic conductive polyacetylene. Here, we used a unique quinoid-resonant building block thieno[3,4-b]thiophene (TbT) to develop a new water-dispersible conducting polymer, PTbT-Me:PSS. Linear polymerization and large surfactant counterion, poly(styrenesulfonate) (PSS−), were introduced, which enabled a high electrical conductivity of 68 S cm−1 and exhibited water-dispersible property. Interchain bipolaron was found in PTbT-Me:PSS when compared with polaron in PEDOT:PSS in their conducting mechanism. Moreover, we applied this highly conductive PTbT-Me:PSS as the solution-processed polymer thermoelectric material and a decent power factor of 3.1 μW m−1 K−2 was achieved.

Reversible Nonlinear I-V Behavior of ZnO-Decorated Graphene Nanoplatelets/Epoxy Resin Composites

With the more serious threats from complex electromagnetic environments, composites composed of conductive or semiconductive fillers and polymeric matrices could exhibit excellent nonlinear I-V characteristics, and have drawn significant attention in the field of overvoltage protection. In this research, graphene nanoplatelets (GNPs) are decorated by ZnO and mixed into an epoxy resin (ER) matrix via solution blending to prepare composites. A characterization analysis and the I-V measurement results of the GNPs/ER composites indicate that ZnO nanoparticles are well bonded with GNPs and exhibit obvious nonlinear I-V behavior under proper applied voltage with high nonlinear coefficients. The switching threshold voltage and nonlinear coefficients could be controlled by adjusting the weight ratio of GNPs and ZnO of the filler. Moreover, compared with the poor recoverability of pure GNP-filled ER in previous research, the GNP-ZnO/ER composites exhibited excellent reversibility of nonlinear I-V behavior under multiple repetitive I-V measurements. And compared with different composites, the sample with a 1:8 weight ratio of GO to Zn(Ac)2 presents the smallest variation of switching threshold voltage at 158 V, with a standard deviation of 1.27% from among 20 measurements, which indicates the best reversibility. Finally, the conducting mechanism of the reversible nonlinear I-V characteristic is investigated and analyzed.

Proton conductive Zr-based MOFs

The preparation strategies, structures, proton conductivity, conducting mechanism, application prospects and future research trends of zirconium-based MOFs are reviewed and highlighted.