Epitaxial Coordination Assembly of Semi-conductive Silver-chalcogenide Layer-based MOF

Using carboxylic acid linker, this work achieved the epitaxially coordination assembly of the Ag−S layer into three-dimensional semi-conductive framework, with high thermal stability, as well as interesting temperature-dependent luminescence response....

Stress-Induced In Situ Modification of Transition Temperature in VO2 Films Capped by Chalcogenide

We attempted to modify the monoclinic–rutile structural phase transition temperature (Ttr) of a VO2 thin film in situ through stress caused by amorphous–crystalline phase change of a chalcogenide layer on it. VO2 films on C- or R-plane Al2O3 substrates were capped by Ge2Sb2Te5 (GST) films by means of rf magnetron sputtering. Ttr of the VO2 layer was evaluated through temperature-controlled measurements of optical reflection intensity and electrical resistance. Crystallization of the GST capping layer was accompanied by a significant drop in Ttr of the VO2 layer underneath, either with or without a SiNx diffusion barrier layer between the two. The shift of Ttr was by ~30 °C for a GST/VO2 bilayered sample with thicknesses of 200/30 nm, and was by ~6 °C for a GST/SiNx/VO2 trilayered sample of 200/10/6 nm. The lowering of Ttr was most probably caused by the volume reduction in GST during the amorphous–crystalline phase change. The stress-induced in in situ modification of Ttr in VO2 films could pave the way for the application of nonvolatile changes of optical properties in optoelectronic devices.

Metal oxide resistive memory with a deterministic conduction path

In this study, a Ge–Sb–Te ternary chalcogenide layer that functions as a conductive lead is added to a HfO2-based RRAM layer to improve the memory switching reproducibility and reduce HRS/LRS variations.

Плазмон-стимулированное фотолегирование в тонкослойной структуре As-=SUB=-2-=/SUB=-S-=SUB=-3-=/SUB=---Ag

The effect of the excitation of surface plasmon polaritons at the silver – chalcogenide glass interface on photostimulated diffusion of silver into the chalcogenide was studied for the first time. To excite plasmons, a high-frequency aluminum diffraction grating with a period of 248.5 nm was used, onto which a two-layer Ag–As2S3 structure was deposited. It was found that the process of photostimulated diffusion of silver into the chalcogenide layer is accelerated (that is, the photosensitivity of such a structure increases) when the surface plasmon polariton is excited at the Ag – As2S3 interface during the exposure. The dynamics of photostimulated changes in the optical characteristics of the structure, including the initial stage of the photodiffusion process, was registered by recording the changes in the plasmon excitation characteristics with the exposure time.

Sythesis, Modification, and Biosensing Characteristics of Au2S/AuAgS-Coated Gold Nanorods

The Au2S/AuAgS-coated gold nanorods (Au2S/AuAgS/GNRs) are prepared by a facile synthesis method and functionally modified for their biosensing application. In the preparation process, the longitudinal plasmon resonance (LPR) bands of Au2S/AuAgS/GNRs can be changed by controlling the thickness of the chalcogenide layer coated on GNRs. Especially, the LPR band located at 800 nm is obtained for biosensing application in the near-infrared region. Furthermore, mercaptoundecanoic acid (MUA) and poly(styrenesulfonate) (PSS) are, respectively, used to modify Au2S/AuAgS/GNRs to acquire the functional nanoprobes; that is, MUA-modified and PSS-modified Au2S/AuAgS/GNRs and their different chemical reaction mechanisms are studied by the absorption spectrum andξ-potential measurement. Then, the functional nanoprobes are incubated with anti-prostate-specific antigen (PSA) antibody to detect PSA. The experimental results demonstrate that the functional nanoprobes are sensitive to the target binding of PSA. Therefore, Au2S/AuAgS/GNRs are suitable to form the bioprobes for detection of PSA in early-phase prostate cancer.