Hybrid external-cavity lasers (ECL) using photonic wire bonds as coupling elements

Combining semiconductor optical amplifiers (SOA) on direct-bandgap III–V substrates with low-loss silicon or silicon-nitride photonic integrated circuits (PIC) has been key to chip-scale external-cavity lasers (ECL) that offer wideband tunability along with small optical linewidths. However, fabrication of such devices still relies on technologically demanding monolithic integration of heterogeneous material systems or requires costly high-precision package-level assembly, often based on active alignment, to achieve low-loss coupling between the SOA and the external feedback circuits. In this paper, we demonstrate a novel class of hybrid ECL that overcome these limitations by exploiting 3D-printed photonic wire bonds as intra-cavity coupling elements. Photonic wire bonds can be written in-situ in a fully automated process with shapes adapted to the mode-field sizes and the positions of the chips at both ends, thereby providing low-loss coupling even in presence of limited placement accuracy. In a proof-of-concept experiment, we use an InP-based reflective SOA (RSOA) along with a silicon photonic external feedback circuit and demonstrate a single-mode tuning range from 1515 to 1565 nm along with side mode suppression ratios above 40 dB and intrinsic linewidths down to 105 kHz. Our approach combines the scalability advantages of monolithic integration with the performance and flexibility of hybrid multi-chip assemblies and may thus open a path towards integrated ECL on a wide variety of integration platforms.

High-Q-Factor Silica-Based Racetrack Microring Resonators

In this paper, ultrahigh-Q factor racetrack microring resonators (MRRs) are demonstrated based on silica planar lightwave circuits (PLCs) platform. A loaded ultrahigh-Q factor Qload of 1.83 × 106 is obtained. The MRRs are packaged with fiber-to-fiber loss of ~5 dB. A notch depth of 3 dB and ~137 pm FSR are observed. These MRRs show great potential in optical communications as filters. Moreover, the devices are suitable used in monolithic integration and hybrid integration with other devices, especially in external cavity lasers (ECLs) to realize ultranarrow linewidths.

Bias Current of Semiconductor Laser: An Unsafe Key for Secure Chaos Communication

In this study, we have proposed and numerically demonstrated that the bias current of a semiconductor laser cannot be used as a key for optical chaos communication, using external-cavity lasers. This is because the chaotic carrier has a signature of relaxation oscillation, whose period can be extracted by the first side peak of the carrier’s autocorrelation function. Then, the bias current can be approximately cracked, according to the well-known relationship between the bias current and relaxation period of a solitary laser. Our simulated results have shown that the cracked current eavesdropper could successfully crack an encrypted message, by means of a unidirectional locking injection or a bidirectional coupling. In addition, the cracked bias current was closer to the real value as the bias current increased, meaning that a large bias current brought a big risk to the security.