scholarly journals Zn diffusion technology for InP-InGaAs avalanche photodiodes

2021 ◽  
Vol 2103 (1) ◽  
pp. 012184
Author(s):  
V V Andryushkin ◽  
A G Gladyshev ◽  
A V Babichev ◽  
E S Kolodeznyi ◽  
I I Novikov ◽  
...  
Keyword(s):  
Diffusion Process ◽  
Diffusion Front ◽  
Vapor Source ◽  
Zn Diffusion ◽  
Carrier Gas ◽  
Mocvd Reactor ◽  
Diffusion Systems ◽  
Zinc Diffusion ◽  
Epitaxial Heterostructures ◽  
Inp Surface

Abstract This paper presents a study of Zn diffusion process into InP and InGaAs/InP epitaxial heterostructures grown by molecular beam epitaxy. It was found that both diffusion systems: a resistively heated quartz reactor with a solid-state Zn vapor source placed inside and hydrogen or nitrogen as the carrier gas and MOCVD reactor with hydrogen as the carrier gas allow achieving similar dopant concentration above 2*10e18 cm-3. The depth of the diffusion front in the InP layer is located from 2 to 3.5 μm depending on the temperature and time of the diffusion process. The diffusion of Zn into InP through the intermediate InGaAs layer provides better surface quality comparing with direct zinc diffusion into InP surface.

Reduction of surface defects on the GaP window layer of 630 nm AlGaInP LED using post-Zn diffusion process

2013 ◽  
Vol 13 (6) ◽  
pp. 1032-1036 ◽  
Author(s):  
H.J. Lee ◽  
S.U. Kim ◽  
S.J. So ◽  
Y.D. Cho ◽  
Y.J. Kim ◽  
...  
Keyword(s):  
Diffusion Process ◽  
Surface Defects ◽  
Window Layer ◽  
Zn Diffusion

Growth mode and effect of carrier gas on In0.53Ga0.47As/InP surface morphology grown with trimethylarsine and arsine

1999 ◽  
Vol 150 (1-4) ◽  
pp. 161-170 ◽  
Author(s):  
H Dumont ◽  
L Auvray ◽  
J Dazord ◽  
Y Monteil ◽  
J Bouix ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Growth Mode ◽  
Carrier Gas ◽  
Inp Surface

A Study of MOCVD-Grown Gallium Nitride Nucleation Layers on Sapphire

1992 ◽  
Vol 280 ◽  
Author(s):  
A. Estes Wickenden ◽  
D. K. Wickenden ◽  
T. J. Kistenmacher ◽  
S. A. Ecelberger ◽  
T. O. Poehler
Keyword(s):  
Gallium Nitride ◽  
Sapphire Substrate ◽  
Low Temperatures ◽  
Carrier Gas ◽  
Mocvd Reactor ◽  
Nucleation Sites

ABSTRACTNucleation layers of GaN have been deposited in an MOCVD reactor on (0001) sapphire, over a range of temperatures and layer thicknesses, using either N2 or H2 carrier gas. The layers have been found to be continuous, textured films as deposited at low temperatures (600°C), but to reorder upon annealing, segregating into nucleation sites which exhibit the normal heteroepitaxial relationship with the sapphire substrate.

Nature of the Diffusion Process in Rubber

1937 ◽  
Vol 10 (4) ◽  
pp. 673-674 ◽  
Author(s):  
Richard M. Barrer
Keyword(s):  
Diffusion Process ◽  
Temperature Coefficient ◽  
Gas Diffusion ◽  
Diffusion System ◽  
Large Temperature ◽  
Molecular Weights ◽  
Diffusion Systems ◽  
Diffusion Of Gases

Abstract It is known that silica-gas diffusion systems exemplify a type of non-specific activated diffusion process, as opposed to the specific type of diffusion system, such as hydrogen-palladium. It seemed that the diffusion of gases through other “glass-like” materials such as some organic membranes, for example rubber, might offer further examples of non-specific activated diffusion. The data needed to test this hypothesis were available in papers by Edwards and Pickering, and by Dewar. Graham first noted the large temperature coefficient of the diffusion process through rubber, and that the diffusion velocities had no connection with the molecular weights.

Zinc Diffusion in GaAs-AIGaAs Heterojunction Bipolar Transistor Structures

1990 ◽  
Vol 198 ◽  
Author(s):  
W. S. Hobson ◽  
S. J. Pearton ◽  
A. S. Jordan
Keyword(s):  
Surface Layer ◽  
Bipolar Transistor ◽  
Recent Model ◽  
Heterojunction Bipolar Transistor ◽  
Organometallic Vapor Phase Epitaxy ◽  
Base Region ◽  
Zn Diffusion ◽  
Si Doping ◽  
Zinc Diffusion

ABSTRACTWe have examined the diffusion of Zn from the base of GaAs-AIGaAs heterojunction bipolar transistor (HBT) structures during growth by organometallic vapor phase epitaxy. The role of Si doping in the emitter-contact, emitter, and collector/subcollector in enhancing the Zn diffusion has been determined by separately doping each layer. For a growth temperature of 675°C Zn shows no observable redistribution up to concentrations of 3x1019 cm−3 without Si doping. The addition of Si to the adjacent AIGaAs emitter and GaAs collector/subcollector layers causes significant diffusion from the base, while Si doping of the GaAs emitter-contact results in even greater Zn redistribution. Silicon counter-doping in the base region retards the Zn diffusion. These results are consistent with a recent model which shows that the n-type surface layer enhances the formation of gallium interstitials which diffuse into the structure and displace the Zn in the base via a kick-out mechanism.

Defect Formation During Zn Diffusion into GaAs

1989 ◽  
Vol 163 ◽  
Author(s):  
Martina Luysberg ◽  
W. Jäger ◽  
K. Urban ◽  
M. Perret ◽  
N.A. Stolwijk ◽  
...  
Keyword(s):  
Defect Formation ◽  
Analytical Electron Microscopy ◽  
Surface Region ◽  
Dislocation Loops ◽  
Diffusion Front ◽  
Near Surface ◽  
Zn Diffusion ◽  
Zn Concentration ◽  
Analytical Electron ◽  
Type Dislocation

AbstractThe microstructure induced by the Zn diffusion at 1170 K into doped and undoped semi-insulating GaAs single crystals was characterized for various diffusion times t < 1740 min by analytical electron microscopy. The results were compared with Zn concentration profiles obtained by spreading resistance measurements (SRM) on the same samples. At the diffusion front the formation of prismatic interstitial dislocation loops, dislocation networks, and of cavities partly filled with Ga was observed. Closer to the surface facetted voids and, for the undoped samples, vacancy-type dislocation loops formed. The near surface region of highest Zn-concentration showed a high density of Zn-rich precipitates. A model is presented which accounts .for these observations. It is based on fast interstitial Zn diffusion and the kick-out mechanism for interstitial-substituional exchange.

Diffusion of Zn into GaAs Inside the Transmission Electron Microscope

1973 ◽  
Vol 31 ◽  
pp. 124-125
Author(s):  
W. C. Rhines ◽  
D. A. Stevenson ◽  
C. R. Barrett ◽  
L. J. Anderson
Keyword(s):  
Electron Microscope ◽  
Lattice Strain ◽  
Dislocation Generation ◽  
Light Emitting ◽  
Zn Diffusion ◽  
Light Emitting Devices ◽  
Density Of Dislocations ◽  
Transmission Electron ◽  
Zinc Diffusion ◽  
Injection Lasers

A technique was developed to directly observe the dislocation generation that occurs during Zn diffusion into GaAs. The method is applicable to a wide variety of materials where phase transformations or lattice strain resulting from impurity diffusion is of interest, and where the need exists to observe the material while the transformation or strain is occurring.Zinc diffusion in GaAs and other III-V compounds is of interest because of its application to the fabrication of light emitting diodes and injection lasers. Numerous reports exist in. the literature concerning the high density of dislocations (>108cm−2) and the presence of precipitates found in GaAs after Zn diffusion. Dislocations and/or precipitates seriously impair the performance of light-emitting devices.

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