SPECIFIC FEATURES OF THE ORGANIZATION OF LOW-BATCH PRODUCTION OF REINFORCED CONCRETE PRODUCTS USING THEIR ELECTROTHERMAL PROCESSING BY INCREASED FREQUENCY CURRENTS

The organization of the technological process of manufacturing concrete products with the use of electrothermal treatment with high-frequency currents at both large and small industrial enterprises is considered. This technology is also useful for winter concreting and field concrete work. The technology is based on the use of a centralized high-frequency power supply, made using high-power transistor voltage converters, for simultaneous processing of several products. A pilot plant for the implementation of such a technology and the results of an experiment with its use are presented. The plant capacity was estimated based on the developed work schedule. Using the example of manufacturing foundation blocks of the FBS 12.4.6 type, it is shown that the actual schedule of work on the manufacture of products using electrothermal treatment with high-frequency currents leads to the fact that the power consumed from the supply network has a relatively small value (13.2 kW), which almost any enterprise can afford.

ВЛИЯНИЕ ЭНЕРГИИ НЕЙТРОНОВ НА СЕЧЕНИЕ ОДИНОЧНЫХ РАДИАЦИОННЫХ ЭФФЕКТОВ В МОЩНЫХ МОП-ТРАНЗИСТОРАХ

Исследованы локальные ионизационные эффекты в мощных МОП-транзисторах при облучении нейтронами различных энергий. Рассмотрено влияние энергии нейтронов и поданного на транзистор напряжения на сечение одиночных событий. Оценена пороговая энергия нейтронов, при которой в исследуемом типе транзисторов регистрируется данный тип радиационных эффектов. The paper highlights local ionizational effects in powerful MOS transistors at irradiation by neutrons of various energy. The authors consider the influence of energy of neutrons and transistor voltage on SEU cross section, as well as estimate threshold energy of neutrons at which there are ionizational effects in the explored type of transistors.

Влияние электрического режима и γ-облучения на образование поверхностных дефектов на границе раздела Si-SiO-=SUB=-2-=/SUB=- в МОП-транзисторе

The results of experimental investigation into surface-defect formation under the effect of gamma-radiation with a dose rate P = 0.1 rad(Si)/s on MOS (metal-oxide-semiconductor) transistors with the n -type channel in the passive and active modes are presented. Two stages of surface-defect formation are observed. A qualitative model is proposed to explain the effect of the the drain transistor voltage on the defect formation process.