A die-stacking technology in a multi-chip package can effectively increase the capacity. However, long wire bonding for multi-chip stack, inter-symbol interference caused by large capacitive loading and I/O speed degradations due to simultaneous switching noise (SSN) and power consumption have become obstacles to optimize the internal NAND flash interface. In this paper, to overcome the inevitable challenge between larger storage capacity and higher I/O speed, we propose a new package structure with a frequency boosting interface chip (FBI-chip) for high speed and high density eStorage.