Using materials for quasiparticle engineering

The fundamental excitations in superconductors – Bogoliubov quasiparticles – can be either a resource or a liability in superconducting devices: they are what enables photon detection in microwave kinetic inductance detectors, but they are a source of errors in qubits and electron pumps. To improve operation of the latter devices, ways to mitigate quasiparticle effects have been devised; in particular, combining different materials quasiparticles can be trapped where they do no harm and their generation can be impeded. We review recent developments in these mitigation efforts and discuss open questions.

High mobility SiMOSFETs fabricated in a full 300 mm CMOS process

The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si substrates in order to investigate the device quality. For devices fabricated in a full CMOS process and of very thin oxide below a thickness of \unit[10]{nm}, we report a record mobility of \unit[$17.5\times 10^{3}$]{cm$^2$/Vs} indicating a high quality interface, suitable for future qubit applications. We also study the influence of gate materials on the mobilities and discuss the underlying mechanisms, giving insight into further material optimization for large scale quantum processors.

The effects of ion implantation damage to photonic crystal optomechanical resonators in silicon

Optomechanical resonators were fabricated on a silicon-on-insulator (SOI) substrate that had been implanted with phosphorus donors. The resonators’ mechanical and optical properties were then measured (at 6 kelvin and room temperature) before and after the substrate was annealed. All measured resonators survived the annealing and their mechanical linewidths decreased while their optical and mechanical frequencies increased. This is consistent with crystal lattice damage from the ion implantation causing the optical and mechanical properties to degrade and then subsequently being repaired by the annealing. We explain these effects qualitatively with changes in the silicon crystal lattice structure. We also report on some unexplained features in the pre-anneal samples. In addition, we report partial fabrication of optomechanical resonators with neon ion milling.

Quantum dot technology for quantum repeaters: from entangled photon generation towards the integration with quantum memories

The realization of a functional quantum repeater is one of the major research goals in long-distance quantum communication. Among the different approaches that are being followed, the one relying on quantum memories interfaced with deterministic quantum emitters is considered as one of the most promising solutions. In this work, we focus on the hardware to implement memory-based quantum-repeater schemes that rely on semiconductor quantum dots for the generation of polarization entangled photons. Going through the most relevant figures of merit related to efficiency of the photon source, we select significant developments in fabrication, processing and tuning techniques aimed at combining high degree of entanglement with on-demand pair generation, with a special focus on the progress achieved in the representative case of the GaAs system. We proceed to offer a perspective on integration with quantum memories, both highlighting preliminary works on natural-artificial atomic interfaces and commenting a wide choice of currently available and potentially viable memory solutions in terms of wavelength, bandwidth and noise-requirements. To complete the overview, we also present recent implementations of entanglement-based quantum communication protocols with quantum dots and highlight the next challenges ahead for the implementation of practical quantum networks.