scholarly journals The effects of ion implantation damage to photonic crystal optomechanical resonators in silicon

2021 ◽  
Author(s):  
Cliona Shakespeare ◽  
Teemu Loippo ◽  
Henri Lyyra ◽  
Juha T Muhonen
Keyword(s):  
Ion Implantation ◽  
Crystal Lattice ◽  
Lattice Structure ◽  
Silicon Crystal ◽  
Silicon On Insulator ◽  
Ion Milling ◽  
Implantation Damage ◽  
Before And After ◽  
Lattice Damage ◽  
Optical And Mechanical Properties

Abstract Optomechanical resonators were fabricated on a silicon-on-insulator (SOI) substrate that had been implanted with phosphorus donors. The resonators’ mechanical and optical properties were then measured (at 6 kelvin and room temperature) before and after the substrate was annealed. All measured resonators survived the annealing and their mechanical linewidths decreased while their optical and mechanical frequencies increased. This is consistent with crystal lattice damage from the ion implantation causing the optical and mechanical properties to degrade and then subsequently being repaired by the annealing. We explain these effects qualitatively with changes in the silicon crystal lattice structure. We also report on some unexplained features in the pre-anneal samples. In addition, we report partial fabrication of optomechanical resonators with neon ion milling.

scholarly journals Effect of Irradiation with Si+ Ions on Phase Transformations in Ti–Al System during Thermal Annealing

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 205
Author(s):  
Zhuldyz Sagdoldina ◽  
Bauyrzhan Rakhadilov ◽  
Sherzod Kurbanbekov ◽  
Rauan Kozhanova ◽  
Aidar Kengesbekov
Keyword(s):  
Ion Implantation ◽  
Crystal Lattice ◽  
Phase Transformations ◽  
Thermal Annealing ◽  
Aluminum Film ◽  
Titanium Silicide ◽  
Surface Layers ◽  
Near Surface ◽  
Before And After ◽  
Increasing Temperature

The article deals with the effect of irradiation with Si+ ions on phase transformations in the Ti–Al system during thermal annealing. An aluminum film with a thickness of 500 nm was deposited on VT1-00 titanium samples by magnetron sputtering, followed by ion implantation. Samples before and after irradiation with Si ions were annealed in a vacuum of 10−4 Pa in the temperature range 600–1000 °C. It was established that ion implantation reduces the dissolution of Al in α-Ti with the formation of titanium silicides (TiSi2, Ti5Si3) and stabilizes aluminide phases Ti3Al rich in aluminum. As a result, a composite structure based on titanium silicide/aluminide was obtained on the surface of the sample synthesized by complex treatment: deposition, irradiation with Si+, and thermal annealing at the near-surface layers. The formation of the phase-structural state of the implanted layers is associated with the displacement of atoms of the crystal lattice, a result that is reflected in an increase in the size of the crystal lattice and a decrease in microdistortion of the lattice. The opposite effect is observed with increasing temperature. This fact is explained by the relaxation of unstable large grains with an excess of internal energies. At the annealing temperature of 900–1000 °C, a significant increase in microhardness was observed due to silicide phases.

An Electron Microscope Study of Interdiffusion and Compound Formation in Ta-Au Thin Films

1973 ◽  
Vol 31 ◽  
pp. 32-33 ◽  
Author(s):  
T. C. Tisone ◽  
S. Lau
Keyword(s):  
Electron Microscope ◽  
Electron Microscope Study ◽  
Thermally Grown Oxide ◽  
Ion Milling ◽  
Compound Formation ◽  
Technology Application ◽  
Transmission Electron ◽  
Before And After ◽  
Au Thin Films

In a study of the properties of a Ta-Au metallization system for thin film technology application, the interdiffusion between Ta(bcc)-Au, βTa-Au and Ta2M-Au films was studied. Considered here is a discussion of the use of the transmission electron microscope(TEM) in the identification of phases formed and characterization of the film microstructures before and after annealing.The films were deposited by sputtering onto silicon wafers with 5000 Å of thermally grown oxide. The film thicknesses were 2000 Å of Ta and 2000 Å of Au. Samples for TEM observation were prepared by ultrasonically cutting 3mm disks from the wafers. The disks were first chemically etched from the silicon side using a HNO3 :HF(19:5) solution followed by ion milling to perforation of the Au side.

Microstructural Study of Diamond Deformed Under High Pressure and Temperature

1985 ◽  
Vol 43 ◽  
pp. 230-231
Author(s):  
E. F. Koch
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Lattice Structure ◽  
Diamond Particle ◽  
Polycrystalline Diamond ◽  
Sintering Process ◽  
Ion Milling ◽  
Sintered Compact ◽  
Transmission Electron ◽  
High Pressure Sintering

Because of the extremely rigid lattice structure of diamond, generating new dislocations or moving existing dislocations in diamond by applying mechanical stress at ambient temperature is very difficult. Analysis of portions of diamonds deformed under bending stress at elevated temperature has shown that diamond deforms plastically under suitable conditions and that its primary slip systems are on the ﹛111﹜ planes. Plastic deformation in diamond is more commonly observed during the high temperature - high pressure sintering process used to make diamond compacts. The pressure and temperature conditions in the sintering presses are sufficiently high that many diamond grains in the sintered compact show deformed microtructures.In this report commercially available polycrystalline diamond discs for rock cutting applications were analyzed to study the deformation substructures in the diamond grains using transmission electron microscopy. An individual diamond particle can be plastically deformed in a high pressure apparatus at high temperature, but it is nearly impossible to prepare such a particle for TEM observation, since any medium in which the diamond is mounted wears away faster than the diamond during ion milling and the diamond is lost.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

TEM study of buried cobalt disilicide layers formed by ion implantation: Identification of cobalt monosilicide inclusions

1990 ◽  
Vol 48 (4) ◽  
pp. 576-577
Author(s):  
A. De Veirman ◽  
J. Van Landuyt ◽  
K.J. Reeson ◽  
R. Gwilliam ◽  
C. Jeynes ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Annealing Treatment ◽  
Silicon On Insulator ◽  
High Dose ◽  
Nitrogen Flow ◽  
Cobalt Disilicide ◽  
Transmission Electron ◽  
Beam Heating ◽  
Co Concentration ◽  
Silicon On Insulator Technology

In analogy to the formation of SIMOX (Separation by IMplanted OXygen) material which is presently the most promising silicon-on-insulator technology, high-dose ion implantation of cobalt in silicon is used to synthesise buried CoSi2 layers. So far, for high-dose ion implantation of Co in Si, only formation of CoSi2 is reported. In this paper it will be shown that CoSi inclusions occur when the stoichiometric Co concentration is exceeded at the peak of the Co distribution. 350 keV Co+ ions are implanted into (001) Si wafers to doses of 2, 4 and 7×l017 per cm2. During the implantation the wafer is kept at ≈ 550°C, using beam heating. The subsequent annealing treatment was performed in a conventional nitrogen flow furnace at 1000°C for 5 to 30 minutes (FA) or in a dual graphite strip annealer where isochronal 5s anneals at temperatures between 800°C and 1200°C (RTA) were performed. The implanted samples have been studied by means of Rutherford Backscattering Spectroscopy (RBS) and cross-section Transmission Electron Microscopy (XTEM).

A New Hafnium-Beryllium System Prioduced by Ion Implantation and Annealing Techniques

1983 ◽  
Vol 27 ◽  
Author(s):  
J.C. Soares ◽  
A.A. Melo ◽  
M.F. DA Silva ◽  
E.J. Alves ◽  
K. Freitag ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Low Dose ◽  
Correlation Method ◽  
High Dose ◽  
Tetrahedral Sites ◽  
Time Differential ◽  
Before And After ◽  
Beryllium Foil

ABSTRACTLow and high dose hafnium imolanted beryllium samoles have been prepared at room temperature by ion implantation of beryllium commercial foils and single crystals. These samples have been studied before and after annealing with the time differential perturbed angular correlation method (TDPAC) and with Rutherford backscattering and channeling techniques. A new metastable system has been discovered in TDPAC-measurements in a low dose hafnium implanted beryllium foil annealed at 500°C. Channeling measurements show that the hafnium atoms after annealing, are in the regular tetrahedral sites but dislocated from the previous position occupied after implantation. The formation of this system is connected with the redistribution of oxygen in a thin layer under the surface. This effect does not take place precisely at the same temperature in foils and in single crystals.

Scanned Electron Beam Annealing of Boron-Implanted Diodes

1980 ◽  
Vol 1 ◽  
Author(s):  
T. O. Yep ◽  
R. T. Fulks ◽  
R. A. Powell
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Reverse Bias ◽  
Carrier Lifetime ◽  
Reverse Current ◽  
Electrical Activation ◽  
Electrical Characteristics ◽  
Low Resolution ◽  
Implantation Damage ◽  
Dopant Redistribution

ABSTRACTSuccessful annealing of p+ n arrays fabricated by ion-implantation of 11B (50 keV, 1 × 1014 cm-2) into Si (100 has been performed using a broadly rastered, low-resolution (0.25-inch diameter) electron beam. A complete 2" wafer could be uniformly annealed in ≃20 sec with high electrical activation (>75%) and small dopant redistribution (≃450 Å). Annealing resulted In p+n junctions characterized by low reverse current (≃4 nAcm-2 at 5V reverse bias) and higher carrier lifetime (80 μsec) over the entire 2" wafer. Based on the electrical characteristics of the diodes, we estimate that the electron beam anneal was able to remove ion implantation damage and leave an ordered substrate to a depth of 5.5 m below the layer junction.

Raman Spectra of Ion Implanted Graphite

1981 ◽  
Vol 7 ◽  
Author(s):  
B.S. Elman ◽  
H. Mazurek ◽  
M.S. Dresselhaus ◽  
G. Dresselhaus
Keyword(s):  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Raman Spectra ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Lattice Order ◽  
Annealing Temperatures ◽  
High Fluences ◽  
Lattice Damage ◽  
The Way

ABSTRACTRaman spectroscopy is used in a variety of ways to monitor different aspects of the lattice damage caused by ion implantation into graphite. Particular attention is given to the use of Raman spectroscopy to monitor the restoration of lattice order by the annealing process, which depends critically on the annealing temperature and on the extent of the original lattice damage. At low fluences the highly disordered region is localized in the implanted region and relatively low annealing temperatures are required, compared with the implantation at high fluences where the highly disordered region extends all the way to the surface. At high fluences, annealing temperatures comparable to those required for the graphitization of carbons are necessary to fully restore lattice order.

Sign in / Sign up

Export Citation Format

Share Document