scholarly journals A New Material for High‐Temperature Lead‐Free Actuators

2013 ◽  
Vol 23 (47) ◽  
pp. 5881-5886 ◽  
Author(s):  
Ahmed Kursumovic ◽  
Emmanuel Defay ◽  
Oon Jew Lee ◽  
Chen‐Fong Tsai ◽  
Zhenxing Bi ◽  
...  
2013 ◽  
Vol 58 (2) ◽  
pp. 529-533 ◽  
Author(s):  
R. Koleňák ◽  
M. Martinkovič ◽  
M. Koleňáková

The work is devoted to the study of shear strength of soldered joints fabricated by use of high-temperature solders of types Bi-11Ag, Au-20Sn, Sn-5Sb, Zn-4Al, Pb-5Sn, and Pb-10Sn. The shear strength was determined on metallic substrates made of Cu, Ni, and Ag. The strength of joints fabricated by use of flux and that of joints fabricated by use of ultrasonic activation without flux was compared. The obtained results have shown that in case of soldering by use of ultrasound (UT), higher shear strength of soldered joints was achieved with most solders. The highest shear strength by use of UT was achieved with an Au-20Sn joint fabricated on copper, namely up to 195 MPa. The lowest average values were achieved with Pb-based solders (Pb-5Sn and Pb-10Sn). The shear strength values of these solders used on Cu substrate varied from 24 to 27 MPa. DSC analysis was performed to determine the melting interval of lead-free solders.


2011 ◽  
Vol 287-290 ◽  
pp. 858-861
Author(s):  
Hui Wang ◽  
Zhou Qing Zhao ◽  
Jian Zeng

Aiming at the characteristics of pavement rutting damage of test road under the condition of heavy load and abrupt slope, an overlay design scheme and a new overlay material with high performance was proposed. The new material is PG82 modified asphalt SMA-13 added polyester fibre which can significantly improve the high temperature performance of asphalt mixture under severe environment, and its strength and crack resistance are superior to normal SMA-13. Tracking survey of test road shows that the pavement performances keeps good and rutting is under good control. Therefore those measurements are successful and can be a reference to similar projects.


2012 ◽  
Vol 19 (3) ◽  
pp. 31-36 ◽  
Author(s):  
Yong-Ho Ko ◽  
Taek-Soo Kim ◽  
Young-Kyu Lee ◽  
Sehoo Yoo ◽  
Chang-Woo Lee

2012 ◽  
Vol 21 (5) ◽  
pp. 629-637 ◽  
Author(s):  
Ales Kroupa ◽  
Dag Andersson ◽  
Nick Hoo ◽  
Jeremy Pearce ◽  
Andrew Watson ◽  
...  
Keyword(s):  

2018 ◽  
Vol 6 (41) ◽  
pp. 19967-19973 ◽  
Author(s):  
Zhenyong Cen ◽  
Yu Huan ◽  
Wei Feng ◽  
Yan Yu ◽  
Peiyao Zhao ◽  
...  

Lead-free (1 − x)(0.96K0.46Na0.54Nb0.98Ta0.02O3–0.04Bi0.5(Na0.82K0.18)0.5ZrO3)–xCaZrO3 ((1 − x)(0.96KNNT–0.04BNKZ)–xCZ) piezoelectric ceramics were prepared by the conventional solid-state reaction method.


2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000144-000151
Author(s):  
Siddharth Potbhare ◽  
Akin Akturk ◽  
Neil Goldsman ◽  
James M. McGarrity ◽  
Anant Agarwal

Silicon Carbide (SiC) is a promising new material for high power high temperature electronics applications. SiC Schottky diodes are already finding wide acceptance in designing high efficiency power electronic systems. We present TCAD and Verilog-A based modeling of SiC DMOSFET, and the design and analysis of a medium power DC-DC converter designed using SiC power DMOSFETs and SiC Schottky diodes. The system is designed as a 300W boost converter with a 12V input and 24V/36V outputs. The SiC power converter is compared to another designed with commercially available Silicon power devices to evaluate power dissipation in the DMOSFETs, transient response of the system and its conversion efficiency. SiC DMOSFETs are characterized at high temperature by developing temperature dependent TCAD and Verilog-A models for the device. Detailed TCAD modeling allows probing inside the device for understanding the physical processes of transport, whereas Verilog-A modeling allows us to define the complex relationship of interface traps and surface physics that is typical to SiC DMOSFETs in a compact analytical format that is suitable for inclusion in commercially available circuit simulators.


2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000111-000115
Author(s):  
Piers R. Tremlett

A polymer based electronic packaging system has been developed that is capable of operating at temperatures over 175°C and up to 225°C. This system is being developed to be a lead free, non-hermetic and able to deliver miniature or functionally dense circuits. It will be suitable for sensor systems where amplification, signal digitisation and autonomy are important whilst operating in a harsh environment such as high temperature.


2019 ◽  
Vol 808 ◽  
pp. 103-108
Author(s):  
Lenka Mészárosová ◽  
Vít Černý ◽  
Rostislav Drochytka ◽  
Winfried Malorny

Development of new material is focused on modification of properties of materials with silicate binder so that these could be used for renovation of horizontal structures of high-temperature devices and at the same time contribute to reduction of heat transportation of constructions with higher surface temperature (in this case 200 and 500 °C). Main requirements for this material is low volume weight and low coefficient of thermal conductivity. This paper assesses influence of exposition to higher temperatures on microstructure.


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