Interface Defect Engineering of MoS
            2
            Monolayer: Interface Defect Engineering of a Large‐Scale CVD‐Grown MoS
            2
            Monolayer via Residual Sodium at the SiO
            2
            /Si Substrate (Adv. Mater. Interfaces 14/2021)

To realize the applications of graphene in electronics, a large-scale, high-quality, and uniform graphene film should first be placed on the dielectric substrates. Challenges still remain with respect to the current methods for the synthesis graphene directly on the dielectric substrates via chemical vapor deposition, such as a low growth rate and poor quality. Herein, we present an ultrafast method for direct growth of uniform graphene on a silicon dioxide (SiO2/Si) substrate using methanol as the only carbon source. A 1 × 1 cm2 SiO2/Si substrate square was almost fully covered with graphene within 5 min, resulting in a record growth rate of ~33.6 µm/s. This outcome is attributed to the quick pyrolysis of methanol, with the help of trace copper atoms. The as-grown graphene exhibited a highly uniform thickness, with a sheet resistance of 0.9–1.2 kΩ/sq and a hole mobility of up to 115.4 cm2/V·s in air at room temperature. It would be quite suitable for transparent conductive electrodes in electrophoretic displays and may be interesting for related industrial applications.

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GMR in Excess of 10% at Room Temperature and Low Magnetic Fields in Electrodeposited Cu/Co Nano-multilayer Structures

MRS Proceedings ◽

10.1557/proc-0961-o12-03 ◽

2006 ◽

Vol 961 ◽

Author(s):

Dinesh K. Pandya ◽

Priyanka Gupta ◽

Subhash C. Kashyap ◽

Sujeet Chaudhary

Keyword(s):

Large Scale ◽

Room Temperature ◽

Multilayer Structures ◽

Scale Production ◽

Si Substrate ◽

Nano Fabrication ◽

Si Substrates ◽

Current Trends ◽

Large Scale Production ◽

Multilayer Stacks

ABSTRACTElectrodeposition has emerged as a novel economically viable technique with large-scale production capabilities in modern day micro technologies. The current trends are to extend the potential of the electrodeposition to nano fabrication. We have successfully electrodeposited Cu/Co multilayers, exhibiting appreciably high GMR, on ITO as well as on Cu/Si substrates. Multilayer stacks with films in thickness range 1 – 10 nm were deposited. The Co layers have different mechanisms of growth on these substrates, thus resulting in different microstructure and topography of the electrodeposited films. This leads to different GMR behavior of the multilayers in both these cases. Room temperature GMR values of 15% at low fields are obtained on ITO substrate and higher values are possible on Cu/Si substrate.

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Aninsituhard mask block copolymer approach for the fabrication of ordered, large scale, horizontally aligned, Si nanowire arrays on Si substrate

10.1117/12.2045754 ◽

2014 ◽

Author(s):

Tandra Ghoshal ◽

Ramsankar Senthamaraikannan ◽

Matthew T. Shaw ◽

Justin D. Holmes ◽

Michael A. Morris

Keyword(s):

Block Copolymer ◽

Large Scale ◽

Nanowire Arrays ◽

Si Substrate ◽

Si Nanowire

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Reduction in interface defect density in p-BaSi2/n-Si heterojunction solar cells by a modified pretreatment of the Si substrate

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.025501 ◽

2018 ◽

Vol 57 (2) ◽

pp. 025501 ◽

Cited By ~ 8

Author(s):

Yudai Yamashita ◽

Suguru Yachi ◽

Ryota Takabe ◽

Takuma Sato ◽

Miftahullatif Emha Bayu ◽

...

Keyword(s):

Solar Cells ◽

Defect Density ◽

Si Substrate ◽

Heterojunction Solar Cells ◽

Interface Defect

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Patterned Fabrication of Single ZnO Nanorods and Measurement of Their Optoelectrical Characteristics

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2008.18349 ◽

2008 ◽

Vol 8 (9) ◽

pp. 4377-4381

Author(s):

Chun-Wei Yu ◽

Shang-Hung Lai ◽

Teng-Yi Wang ◽

Ming-Der Lan ◽

Mon-Shu Ho

Keyword(s):

Emission Spectroscopy ◽

Large Scale ◽

Zno Nanorods ◽

Si Substrate ◽

Field Emission Display ◽

Conductive Afm ◽

Uv Emission ◽

New Process ◽

Pl Emission ◽

Hexagonal Nanorods

This work develops a new process of growing well ordered ZnO nanorods in large scale on the Si(111) substrate. Nanosphere lithography (NSL) was adopted to produce a matrix in an extensive area. A pattern with a controlled amount of gold was formed through the nanosphere mask. The ZnO nanorods were then grown on a patterned Au/Si substrate through a metal catalytic vapor-liquid-solid (VLS) process. The structure and characteristics of ZnO nanorods were investigated by XRD, SEM and TEM. The hexagonal nanorods were dominated at (0002) direction with a lattice constant of ∼5.03 Å. The optoelectronical properties were studied by PL emission spectroscopy. A strong UV emission at 380 nm was observed. The band gap of the single ZnO nanorod was directly measured to be 3.36 eV using a conductive AFM. The superiority of patterned ZnO nanorods indicates their great potential in field emission display arrays.

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Direct formation of large-scale multi-layered germanene on Si substrate

Physical Chemistry Chemical Physics ◽

10.1039/c5cp02469b ◽

2015 ◽

Vol 17 (33) ◽

pp. 21389-21393 ◽

Cited By ~ 24

Author(s):

Hsu-Sheng Tsai ◽

Yu-Ze Chen ◽

Henry Medina ◽

Teng-Yu Su ◽

Ta-Shun Chou ◽

...

Keyword(s):

Thin Film ◽

Large Scale ◽

Si Substrate ◽

Direct Formation

Germanene layers with lonsdaleite structure has been synthesized from a SiGe thin film using a N2 plasma-assisted process in this investigation.

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Large Scale Synthesis of Highly Pure Single Crystalline Tellurium Nanowires by Thermal Evaporation Method

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2006.015 ◽

2006 ◽

Vol 6 (11) ◽

pp. 3380-3383 ◽

Cited By ~ 8

Author(s):

Paritosh Mohanty ◽

Jeunghee Park ◽

Bongsoo Kim

Keyword(s):

Large Scale ◽

Thermal Evaporation ◽

Inert Atmosphere ◽

High Yield ◽

Si Substrate ◽

Thermal Evaporation Method ◽

Single Crystalline ◽

Vaporization Process ◽

Ar Gas ◽

Tellurium Nanowires

Single crystalline tellurium nanowires were successfully synthesized in large scale by a facile approach of vaporizing tellurium metal and condensing the vapor in an inert atmosphere onto a Si substrate. Tellurium was evaporated by heating at 300° C at 1 torr and condensed on the Si substrate at 100–150° C, in the downstream of argon (Ar) gas at a flow rate of 25 sccm for 30 min. The as-synthesized nanowires have diameters between 100–300 nm and lengths up to several micrometers. The single crystalline nanowires grew in a preferred [0001] direction. The obtained nanowires were highly pure as only tellurium metal was used in the vaporization process, and no other reagent, surfactant, or template were used for the growth. This low temperature and high-yield approach to the tellurium nanowires synthesis may facilitate its industrial production for various applications.

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