Direct formation of large-scale multi-layered germanene on Si substrate

2015 ◽  
Vol 17 (33) ◽  
pp. 21389-21393 ◽  
Author(s):  
Hsu-Sheng Tsai ◽  
Yu-Ze Chen ◽  
Henry Medina ◽  
Teng-Yu Su ◽  
Ta-Shun Chou ◽  
...  
Keyword(s):  
Thin Film ◽  
Large Scale ◽  
Si Substrate ◽  
Direct Formation

Germanene layers with lonsdaleite structure has been synthesized from a SiGe thin film using a N2 plasma-assisted process in this investigation.

scholarly journals Growth and Fabrication of GaAs Thin-Film Solar Cells on a Si Substrate via Hetero Epitaxial Lift-Off

2022 ◽  
Vol 12 (2) ◽  
pp. 820
Author(s):  
Seungwan Woo ◽  
Geunhwan Ryu ◽  
Taesoo Kim ◽  
Namgi Hong ◽  
Jae-Hoon Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Large Scale ◽  
Low Cost ◽  
Cell Structure ◽  
Thin Film Solar Cells ◽  
Threading Dislocation ◽  
Si Substrate ◽  
Lift Off

We demonstrate, for the first time, GaAs thin film solar cells epitaxially grown on a Si substrate using a metal wafer bonding and epitaxial lift-off process. A relatively thin 2.1 μm GaAs buffer layer was first grown on Si as a virtual substrate, and a threading dislocation density of 1.8 × 107 cm−2 was achieved via two In0.1Ga0.9As strained insertion layers and 6× thermal cycle annealing. An inverted p-on-n GaAs solar cell structure grown on the GaAs/Si virtual substrate showed homogenous photoluminescence peak intensities throughout the 2″ wafer. We show a 10.6% efficient GaAs thin film solar cell without anti-reflection coatings and compare it to nominally identical upright structure solar cells grown on GaAs and Si. This work paves the way for large-scale and low-cost wafer-bonded III-V multi-junction solar cells.

The Structure and Properties of MoSi2 Thin Film in Mos Process

1980 ◽  
Vol 38 ◽  
pp. 326-327
Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Large Scale ◽  
Process Development ◽  
Structure And Properties ◽  
Metal Silicides ◽  
High Oxidation ◽  
Important Approach ◽  
High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

scholarly journals Performance Improvement of ZnSnO Thin-Film Transistors with Low-Temperature Self-Combustion Reaction

Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 1099
Author(s):  
Ye-Ji Han ◽  
Se Hyeong Lee ◽  
So-Young Bak ◽  
Tae-Hee Han ◽  
Sangwoo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Large Scale ◽  
Low Cost ◽  
Thermal Analyses ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Annealing Temperatures ◽  
Zinc Tin Oxide ◽  
Thermal Limitation

Conventional sol-gel solutions have received significant attention in thin-film transistor (TFT) manufacturing because of their advantages such as simple processing, large-scale applicability, and low cost. However, conventional sol-gel processed zinc tin oxide (ZTO) TFTs have a thermal limitation in that they require high annealing temperatures of more than 500 °C, which are incompatible with most flexible plastic substrates. In this study, to overcome the thermal limitation of conventional sol-gel processed ZTO TFTs, we demonstrated a ZTO TFT that was fabricated at low annealing temperatures of 350 °C using self-combustion. The optimized device exhibited satisfactory performance, with μsat of 4.72 cm2/V∙s, Vth of −1.28 V, SS of 0.86 V/decade, and ION/OFF of 1.70 × 106 at a low annealing temperature of 350 °C for one hour. To compare a conventional sol-gel processed ZTO TFT with the optimized device, thermogravimetric and differential thermal analyses (TG-DTA) and X-ray photoelectron spectroscopy (XPS) were implemented.

Study of the quality of GaAs thin film on Si substrate by X-ray diffraction method

1990 ◽  
Vol 7 (7) ◽  
pp. 308-311
Author(s):  
Li Chaorong ◽  
Mai Zhenhong ◽  
Cui Shufan ◽  
Zhou Junming ◽  
Yutian Wang
Keyword(s):  
Thin Film ◽  
Diffraction Method ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray

A New Specimen for Measuring the Interfacial Toughness of Al-0.5%Cu Thin Film on Si Substrate

2005 ◽  
Vol 297-300 ◽  
pp. 521-526
Author(s):  
Insu Jeon ◽  
Masaki Omiya ◽  
Hirotsugu Inoue ◽  
Kikuo Kishimoto ◽  
Tadashi Asahina
Keyword(s):  
Thin Film ◽  
The Finite Element Method ◽  
Si Substrate ◽  
Detailed Structure ◽  
Micro Fabrication ◽  
Interfacial Toughness ◽  
Linear Elastic ◽  
Elastic Fracture ◽  
Cu Thin Film ◽  
Research Show

A new specimen is proposed to measure the interfacial toughness between the Al-0.5%Cu thin film and the Si substrate. The plain and general micro-fabrication processes are sufficient to fabricate the specimen. With the help of the finite element method and the concepts of the linear elastic fracture mechanics, the detailed structure for this specimen is modeled and evaluated. The results obtained from this research show that the proposed specimen provides efficient and convenient method to measure the interfacial toughness between the Al-Cu thin film and the Si substrate.

PREPARATION AND FERROELECTRIC PROPERTY OF (100)-ORIENTED Ca0.4Sr0.6Bi4Ti4O15 THIN FILM ON Pt/Ti/SiO2/Si SUBSTRATE

2010 ◽  
Vol 17 (05n06) ◽  
pp. 445-449 ◽  
Author(s):  
SUHUA FAN ◽  
QUANDE CHE ◽  
FENGQING ZHANG
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Property ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Sem Analysis ◽  
Si Substrate ◽  
Degree Of Orientation ◽  
Equiaxed Grains

The (100)-oriented Ca0.4Sr0.6Bi4Ti4O15(C0.4S0.6BTi ) thin film was successfully prepared by a sol-gel method on Pt/Ti/SiO2/Si substrate. The orientation and formation of thin films under different annealing schedules were studied using XRD and SEM. XRD analysis indicated that (100)-oriented C0.4S0.6BTi thin film with degree of orientation of I(200)/I(119) = 1.60 was prepared by preannealing the film at 400°C for 3 min followed by rapid thermal annealing at 800°C for 5 min. SEM analysis further indicated that the (100)-oriented C0.4S0.6BTi thin film with a thickness of about 800 nm was mainly composed of equiaxed grains. The remanent polarization and coercive field of the film were 16.1 μC/cm2 and 85 kV/cm, respectively.

A compact new-concept ellipsometer for accurate large scale thin film measurements

2014 ◽  
Vol 16 (6) ◽  
pp. 065701 ◽  
Author(s):  
Richard Koops ◽  
Petro Sonin ◽  
Marijn van Veghel ◽  
Omar El Gawhary
Keyword(s):  
Thin Film ◽  
Large Scale

Near-Infrared Light Emission from of Er-Doped ZnO Thin Film in Micropits Processed on Si Substrate

2006 ◽  
Vol 320 ◽  
pp. 113-116
Author(s):  
Shigeru Tanaka ◽  
Yukari Ishikawa ◽  
Naoki Ohashi ◽  
Junichi Niitsuma ◽  
Takashi Sekiguchi ◽  
...  
Keyword(s):  
Thin Film ◽  
Near Infrared ◽  
Light Emission ◽  
Infrared Light ◽  
Zno Thin Film ◽  
Si Substrate ◽  
Near Infrared Light ◽  
Transmission Electron ◽  
Doped Zno ◽  
Er Doped

We have obtained Er-doped ZnO thin film in a micropattern of reverse trapezoids processed on Si substrate by sputtering and ultrafine polishing techniques. Near-infrared light emission was detected successfully from the thin film filling a single micropit with 10 μm square. Transmission electron microscopy (TEM) observation showed epitaxial growth of ZnO crystals along the curvature of the micropit.

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