Holey Contacts: A New Approach to Enhance Charge Injection through Low-Cost Nanopore-Structured Silver Electrodes in Bottom-Gate Bottom-Contact (BGBC) Organic Field-Effect Transistors

2016 ◽  
Vol 2 (10) ◽  
pp. 1600215 ◽  
Author(s):  
Deyang Ji ◽  
Johann Jersch ◽  
Harald Fuchs
2011 ◽  
Vol 161 (21-22) ◽  
pp. 2226-2229 ◽  
Author(s):  
Fatemeh Gholamrezaie ◽  
Kamal Asadi ◽  
Romero A.H.J. Kicken ◽  
Bea M.W. Langeveld-Voss ◽  
Dago M. de Leeuw ◽  
...  

2002 ◽  
Vol 725 ◽  
Author(s):  
H.E. Katz ◽  
T. Someya ◽  
B. Crone ◽  
X.M. Hong ◽  
M. Mushrush ◽  
...  

Organic field-effect transistors (OFETs) are “soft material” versions of accumulationmode silicon-based FETs, where a gate field across a dielectric induces a conductive charge channel at the interface of the dielectric with a semiconductor, between source and drain electrodes. Charge carrier mobilities >0.01 and on/off ratios >10,000 are routinely obtained, adequate for a few specialized applications such as electrophoretic pixel switches but well below standards established for silicon microprocessor technology. Still, progress that has been made in solution-phase semiconductor deposition and the printing of contacts and dielectrics stimulates the development of OFET circuits for situations where extreme low cost, large area, and mechanical flexibility are important. Circuits with hundreds of OFETs have been demonstrated and a prototype OFETcontrolled black-on-white “electronic ink” sign has been fabricated.


2001 ◽  
Vol 665 ◽  
Author(s):  
A. Ullmann ◽  
J. Ficker ◽  
W. Fix ◽  
H. Rost ◽  
W. Clemens ◽  
...  

ABSTRACTIntegrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source - drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.


2011 ◽  
Vol 21 (4) ◽  
pp. 786-791 ◽  
Author(s):  
Jing Zhang ◽  
Yan Zhao ◽  
Zhongming Wei ◽  
Yimeng Sun ◽  
Yudong He ◽  
...  

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