A High Seebeck Voltage Thermoelectric Module with P‐type and N‐type MAPbI 3 Perovskite Single Crystals

2021 ◽  
pp. 2001003
Author(s):  
Zuoxiang Xie ◽  
Kai Feng ◽  
Yan Xiong ◽  
Xu Chen ◽  
Yudong Liang ◽  
...  
Keyword(s):  
Single Crystals ◽  
Thermoelectric Module ◽  
P Type ◽  
Seebeck Voltage

Fabrication of Bi-Te Based Thermoelectric Semiconductors by Using Hybrid Powders

2005 ◽  
Vol 297-300 ◽  
pp. 875-880
Author(s):  
Cheol Ho Lim ◽  
Ki Tae Kim ◽  
Yong Hwan Kim ◽  
Dong Choul Cho ◽  
Young Sup Lee ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Single Crystals ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Bending Strength ◽  
Mixing Ratio ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
P Type

P-type Bi0.5Sb1.5Te3 compounds doped with 3wt% Te were fabricated by spark plasma sintering and their mechanical and thermoelectric properties were investigated. The sintered compounds with the bending strength of more than 50MPa and the figure-of-merit 2.9×10-3/K were obtained by controlling the mixing ratio of large powders (PL) and small powders (PS). Compared with the conventionally prepared single crystal thermoelectric materials, the bending strength was increased up to more than three times and the figure-of-merit Z was similar those of single crystals. It is expected that the mechanical properties could be improved by using hybrid powders without degradation of thermoelectric properties.

Defects in Undoped p-type CdTe Single Crystals

2016 ◽  
Vol 6 (6) ◽  
pp. 1663-1667 ◽  
Author(s):  
Tursun Ablekim ◽  
Santosh K. Swain ◽  
Jedidiah McCoy ◽  
Kelvin G. Lynn
Keyword(s):  
Single Crystals ◽  
P Type

scholarly journals Performance calculations of thermoelectric module p-type leg composed of (Bi2Te3)x(Sb2Te3)1-x

2016 ◽  
Vol 10 ◽  
pp. 00062
Author(s):  
Michał Musiał ◽  
Marcin Borcuch ◽  
Krzysztof Wojciechowski
Keyword(s):  
Thermoelectric Module ◽  
P Type

Electrical Properties of CdCr2Se4. I. p-Type Ag-Doped Single Crystals

1980 ◽  
Vol 19 (2) ◽  
pp. 307-315 ◽  
Author(s):  
Kunihiko Kodama ◽  
Tatsuya Niimi
Keyword(s):  
Electrical Properties ◽  
Single Crystals ◽  
P Type

Effect of Plating Layers on the Bonding Strength of p-Type Bi–Te Thermoelectric Elements

2021 ◽  
Vol 21 (8) ◽  
pp. 4503-4507
Author(s):  
Seong Min Yun ◽  
Injoon Son ◽  
Sung Hwa Bae
Keyword(s):  
Bonding Strength ◽  
Thermoelectric Module ◽  
Interface Layer ◽  
Ceramic Substrates ◽  
In Series ◽  
Cu Substrates ◽  
Solder Reaction ◽  
P Type ◽  
Substrate Defects ◽  
Solder Layer

In thermoelectric modules, multiple n-type and p-type thermoelectric elements are electrically connected in series on a Cu electrode that is bonded to a ceramic substrate. Defects in the bond between the thermoelectric elements and the Cu electrode could impact the performance of the entire thermoelectric module. This study investigated the effect of plating layers on the bonding strength of p-type Bi–Te thermoelectric elements. Ni and Pd electroplating was applied to Bi–Te thermoelectric elements; further, electroless Ni–P immersion gold (ENIG) plating was applied to Cu electrodes bonded to ceramic substrates. Forming a Pd/Ni electroplating layer on the surface of thermoelectric elements and an ENIG plating layer on the surface of the Cu electrode improved the bonding strength by approximately 3.5 times. When the Pd/Ni and ENIG plating layers were formed on Bi–Te elements and Cu substrates, respectively, the solderability greatly increased; as the solderability increased, the thickness of the diffusion layer formed with the solder layer increased. The improved bonding strength of the Pd/Ni plated thermoelectric element bonded on the ENIG plated substrate is attributed to the enhanced solderability due to the rapid inter-diffusion of Pd and Au into the solder layer and the formation of a stable and non-defected solder reaction interface layer.

Photoconductivity of p-Type CdSnP2 Single Crystals

1978 ◽  
pp. 691-696
Author(s):  
G.A. Medvedkin ◽  
Yu.V. Rud ◽  
Yu.A. Valov ◽  
V.I. Sokolova
Keyword(s):  
Single Crystals ◽  
P Type

Limits of Carrier Diffusion in n-Type and p-Type CH3NH3PbI3 Perovskite Single Crystals

2016 ◽  
Vol 7 (17) ◽  
pp. 3510-3518 ◽  
Author(s):  
Octavi E. Semonin ◽  
Giselle A. Elbaz ◽  
Daniel B. Straus ◽  
Trevor D. Hull ◽  
Daniel W. Paley ◽  
...  
Keyword(s):  
Single Crystals ◽  
Carrier Diffusion ◽  
P Type

Preparation and Characterisation of (ZnTe)x(CdSe)1−x Single Crystals

1989 ◽  
Vol 161 ◽  
Author(s):  
V.K. Madhu Smitha Rani ◽  
R.P. Vijayalakshmi ◽  
D. Raja Reddy ◽  
B.K. Reddy
Keyword(s):  
Chemical Analysis ◽  
Single Crystals ◽  
Entire Range ◽  
Energy Gap ◽  
Spectral Response ◽  
Alloy System ◽  
Crystalline Form ◽  
Reflection Spectra ◽  
Alloy Material ◽  
P Type

ABSTRACTThe titlematerial is one of the least studied among the II-VI alloy systems. So far it has not been possible to prepare ZnTe in n-type and CdSe in p-type with appreciable conductivities. Moreover ZnTe crystallises in zincblende whereas CdSe crystallises in wurtzite structure. Because of the varied nature of the end compounds, an attempt has been made to prepare single crystals of (ZnTe)x(CdSe)1−x in the entire range of ‘x’. The alloy material in the entire range Xof composition in the single crystalline form was grown by a modified Piper-Plich method. The grown crystals of this alloy system have been subjected to chemical analysis. DTA and DTG studies carried out on these alloys did not show any phasec transitions. However two exothermic peaks associated with increase in mass were noticed. This has been attributed to oxidation effects of Se/Te or Cd/Zn. XRD data though showed some regularity near end compositions there is still some ambiguity for the middle compositions. Energy gap obtained from reflection spectra and also photocurrent spectral response showed bowing. However, there is a marked different feature at one of the end regions. The growth and the results of all the above mentioned investigations are presented and discussed in this paper.

Synthesis and Thermoelectric Properties of Ba8Ga16+xSbxGe30-2x (x=0,1) Clathrate Single Crystals

2008 ◽  
Vol 368-372 ◽  
pp. 553-555
Author(s):  
H.F. Wang ◽  
Ke Feng Cai ◽  
H. Li ◽  
L. Wang ◽  
X.L. Li
Keyword(s):  
Electron Microscopy ◽  
Seebeck Coefficient ◽  
Single Crystals ◽  
Czochralski Method ◽  
X Ray Diffraction ◽  
Flux Method ◽  
X Ray ◽  
Type Semiconductor ◽  
P Type ◽  
Scanning Electron

Ba8Ga16Ge30 clathrate material has being intensely investigated as a candidate of promising thermoelectric materials. In this work, Ba8Ga16+xSbxGe30-2x (x=0,1) single crystals have been synthesized by the Ga flux method, using high purity elemental Ba, Sb, Ga, and Ge as starting materials. Powder X-ray diffraction, Scanning electron microscopy equipped with energy-dispersive X-ray spectroscopy and Raman spectroscopy were used to characterize the single crystals. Seebeck coefficient of the crystals was measured from 300 to 800 K. The result indicates that the crystals are p-type semiconductor, which is different from the crystals synthesized by the Czochralski method. The Seebeck coefficient almost does not change after doping Sb in the whole temperature measured and it is in the range of 200 to 300μV/K.

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