Effect of Plating Layers on the Bonding Strength of p-Type Bi–Te Thermoelectric Elements

2021 ◽  
Vol 21 (8) ◽  
pp. 4503-4507
Author(s):  
Seong Min Yun ◽  
Injoon Son ◽  
Sung Hwa Bae
Keyword(s):  
Bonding Strength ◽  
Thermoelectric Module ◽  
Interface Layer ◽  
Ceramic Substrates ◽  
In Series ◽  
Cu Substrates ◽  
Solder Reaction ◽  
P Type ◽  
Substrate Defects ◽  
Solder Layer

In thermoelectric modules, multiple n-type and p-type thermoelectric elements are electrically connected in series on a Cu electrode that is bonded to a ceramic substrate. Defects in the bond between the thermoelectric elements and the Cu electrode could impact the performance of the entire thermoelectric module. This study investigated the effect of plating layers on the bonding strength of p-type Bi–Te thermoelectric elements. Ni and Pd electroplating was applied to Bi–Te thermoelectric elements; further, electroless Ni–P immersion gold (ENIG) plating was applied to Cu electrodes bonded to ceramic substrates. Forming a Pd/Ni electroplating layer on the surface of thermoelectric elements and an ENIG plating layer on the surface of the Cu electrode improved the bonding strength by approximately 3.5 times. When the Pd/Ni and ENIG plating layers were formed on Bi–Te elements and Cu substrates, respectively, the solderability greatly increased; as the solderability increased, the thickness of the diffusion layer formed with the solder layer increased. The improved bonding strength of the Pd/Ni plated thermoelectric element bonded on the ENIG plated substrate is attributed to the enhanced solderability due to the rapid inter-diffusion of Pd and Au into the solder layer and the formation of a stable and non-defected solder reaction interface layer.

scholarly journals Effect of Electroless Ni–P Plating on the Bonding Strength of Bi–Te-Based Thermoelectric Modules

2017 ◽  
Vol 62 (2) ◽  
pp. 1225-1229
Author(s):  
S.S. Kim ◽  
I. Son ◽  
K.T. Kim
Keyword(s):  
Intermetallic Compound ◽  
Diffusion Layer ◽  
Bonding Strength ◽  
Thermoelectric Module ◽  
Bonding Interface ◽  
The Other ◽  
Thermoelectric Element ◽  
Epma Analysis ◽  
P Type ◽  
Electroless Ni

AbstractIn the present study, electroless Ni–P plating was applied to Bi–Te-based thermoelectric materials as a barrier layer and the effect of the Ni–P plating on the bonding strength of the thermoelectric module was investigated. The bonding strength of the n- and p-type modules increased after being subjected to the electroless Ni–P plating treatment. In the case of the thermoelectric module that was not subjected to electroless Ni–P plating, Sn and Te were interdiffused and formed a brittle Sn–Te-based metallic compound. The shearing mostly occurred on the bonding interface where such an intermetallic compound was formed. On the other hands, it was found from the FE-EPMA analysis of the bonding interface of thermoelectric module subjected to electroless Ni-P plating that the electroless Ni-P plating acted as an anti-diffusion layer, preventing the interdiffusion of Sn and Te. Therefore, by forming such an anti-diffusion layer on the surface of the Bi–Te based thermoelectric element, the bonding strength of the thermoelectric module could be increased.

A High Seebeck Voltage Thermoelectric Module with P‐type and N‐type MAPbI 3 Perovskite Single Crystals

2021 ◽  
pp. 2001003
Author(s):  
Zuoxiang Xie ◽  
Kai Feng ◽  
Yan Xiong ◽  
Xu Chen ◽  
Yudong Liang ◽  
...  
Keyword(s):  
Single Crystals ◽  
Thermoelectric Module ◽  
P Type ◽  
Seebeck Voltage

scholarly journals Performance calculations of thermoelectric module p-type leg composed of (Bi2Te3)x(Sb2Te3)1-x

2016 ◽  
Vol 10 ◽  
pp. 00062
Author(s):  
Michał Musiał ◽  
Marcin Borcuch ◽  
Krzysztof Wojciechowski
Keyword(s):  
Thermoelectric Module ◽  
P Type

scholarly journals Using iron sulphate to form both n-type and p-type pseudo-thermoelectrics: non-hazardous and ‘second life’ thermogalvanic cells

2020 ◽  
Vol 22 (18) ◽  
pp. 6062-6074
Author(s):  
Mark A. Buckingham ◽  
Kristine Laws ◽  
Jason T. Sengel ◽  
Leigh Aldous
Keyword(s):  
Second Life ◽  
Waste Heat ◽  
In Series ◽  
Iron Sulphate ◽  
P Type

Conventional electrically in-series thermogalvanic cells are proven options to chemically convert waste heat into electricity, but often utilise incompatible chemicals. This work reports significantly safer and more robust cell chemistry.

Thermoelectric High Power Generating Module Made by n-Ba8AlxSi46-x Clathrate

2008 ◽  
Vol 1102 ◽  
Author(s):  
Shinji Munetoh ◽  
Makoto Arita ◽  
Hideki Makiyama ◽  
Teruaki Motooka
Keyword(s):  
Figure Of Merit ◽  
Open Circuit Voltage ◽  
Thermoelectric Module ◽  
Lithium Ion ◽  
Open Circuit ◽  
Electric Resistance ◽  
Thermoelectric Figure ◽  
Arc Melting ◽  
In Series ◽  
Specific Electric Resistance

AbstractWe have developed a new thermoelectric power-generating module composed of 72 pieces of n-type Ba8Al18Si28 clathrate elements made by arc melting. The Seebeck coefficient, specific electric resistance and thermal conductivity of Ba8Al18Si28 clathrate were 250 μV/K, 1.9 mΩcm and 3.1 W/mK at 500 °C, respectively, and the thermoelectric figure of merit (ZT) was 0.8. The new thermoelectric module was constructed using only n-type thermoelectric elements connected in series with hook-shaped electrodes. The open-circuit voltage of the module increased with hot-side temperature up to 1.8 V at 500 °C and generated 0.24 W. The module was successfully used to charge lithium-ion batteries for mobile phones.

scholarly journals Bonding strength of glass-ceramic trabecular-like coatings to ceramic substrates for prosthetic applications

2013 ◽  
Vol 33 (3) ◽  
pp. 1530-1538 ◽  
Author(s):  
Qiang Chen ◽  
Francesco Baino ◽  
Nicola M. Pugno ◽  
Chiara Vitale-Brovarone
Keyword(s):  
Glass Ceramic ◽  
Bonding Strength ◽  
Ceramic Substrates

Schottky-barrier height tuning using dopant segregation in Schottky-barrier MOSFETs on fully-depleted SOI

2006 ◽  
Vol 913 ◽  
Author(s):  
Joachim Knoch ◽  
Min Zhang ◽  
Qing-Tai Zhao ◽  
Siegfried Mantl
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Field Effect Transistors ◽  
Interface Layer ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Fully Depleted ◽  
Dopant Segregation ◽  
P Type ◽  
Silicon Interface

AbstractIn this paper we demonstrate the use of dopant segregation during silicidation for decreasing the effective potential barrier height in Schottky-barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs). N-type as well as p-type devices are fabricated with arsenic/boron implanted into the device's source and drain regions prior to silicidation. During full nickel silicidation a highly doped interface layer is created due to dopants segregating at the silicide-silicon interface. This doped layer leads to an increased tunneling probability through the Schottky barrier and hence leads to significantly improved device characteristics. In addition, we show with simulations that employing ultrathin body (UTB) silicon-on-insulator and ultrathin gate oxides allows to further improve the device characteristics.

Designing and Fabricating of Low Cost Thermoelectric Power Generators

2011 ◽  
Vol 110-116 ◽  
pp. 4101-4105 ◽  
Author(s):  
Tosawat Seetawan
Keyword(s):  
Transition Metal Oxides ◽  
Thermoelectric Materials ◽  
Alternative Energy ◽  
Low Cost ◽  
Thermoelectric Module ◽  
Clean Energy ◽  
Energy Resources ◽  
Renewable Energy Resources ◽  
Thermoelectric Coolers ◽  
P Type

Fossil fuel is the main energy resources of the world. About 80-90% of its primary energy need to supply by oil, coal, natural gas, and oil shale [1]. These energy resources will also be of importance in the future but non-renewable and cause problems to the environment as a result of their relatively high amount of carbon dioxide (CO2), carbon monoxide (CO), and other environmentally harmful emissions. We are investigating to look for alternative energy resources which are clean, safe, and long-term reliable. Thermoelectricity is one of the renewable energy resources that has been widely investigated and is expected to be feasible in the near future. Moreover, it is a clean energy generation, since it can directly convert heat to electrical energy by using non-polluting thermoelectric devices. These are reasons for the growing interest in further research and development of the thermoelectric technology. The search for new thermoelectric materials is important that the transition metal oxides were interested such as p-type Ca3Co4O9 [2-7] and n-type CaMnO3 [8-12]. There have been synthesized using different techniques in the form of powder and bulk. However, the doped metals have been expected to be one of the candidates for good thermoelectric materials, including thermoelectric module consists of two or more materials of p-type and n-type [13-15]. Recently, the thermoelectric module is also being used as the thermoelectric generators, thermoelectric coolers, etc. [16-17].

Thermoelectric Module of P-Type Ca-Co-O/N-Type ZnO Thin Films

2012 ◽  
Vol 622-623 ◽  
pp. 726-733 ◽  
Author(s):  
Weerasak Somkhunthot ◽  
Nuwat Pimpabute ◽  
Tosawat Seetawan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Power Factor ◽  
Electrical Power ◽  
Thermoelectric Module ◽  
Preliminary Test ◽  
Internal Resistance ◽  
Open Circuit ◽  
P Type

Thin films thermoelectric module fabricated by pulsed-dc magnetron sputtering system using Ca3Co4O9(p-type) and ZnO (n-type) targets of 60 mm diameter and 2.5 mm thickness, which were made from powder precursor, and obtained by solid state reaction. Thin films of p-Ca-Co-O (Seebeck coefficient = 143.85 µV/K, electrical resistivity = 4.80 mΩm, power factor = 4.31 µW/m K2) and n-ZnO (Seebeck coefficient =229.24 µV/K, electrical resistivity = 5.93 mΩm, power factor = 8.86 µW/m K2) were used to make a thermoelectric module, which consist of four pairs of legs connected by copper electrodes (0.5 mm thickness, 3.0 mm width, and 3.0-8.0 mm length). Each leg is 3.0 mm width, 20.0 mm length, and 0.44 µm thickness on a glass substrate of 1.0 mm thickness in dimension 25.0x50.0 mm2. For preliminary test, a module was used to thermoelectric power generation. It was found that the open circuit voltage increased with increasing temperature difference from 3 mV at 5 K up to 20 mV at 78 K. The internal resistance of a module reached a value of 14.52 MΩ. This test indicated that a module can be generated the electrical power. Therefore, it can be used as an important platform for further thin films thermoelectric module research.

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