2D Ultrathin p‐type ZnTe with High Environmental Stability

ABSTRACTThe rapidly expanding field of organic semiconductors for display and low-cost electronic applications requires materials, which not only have high mobility but also benefit from solution processability and environmental stability. In this paper we present a new class of solution coatable organic materials with excellent stability to air and light. Spin-coated FET devices operate at ambient conditions without encapsulation and show p-type field-effect mobilities of 2 x 10-3 cm2V-1s-1 and on/off ratios greater than 104. Thin films can be deposited from common organic solvents onto a variety of substrates. These films are mechanically robust and can withstand temperatures in excess of 100 °C without significant changes in electrical performance. FET switching and transient characteristics at higher frequencies are also discussed. These types of materials should find applications in many areas of flexible electronics.

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Introduction of PANI Thin Films

Advances in Chemical and Materials Engineering - Properties, Techniques, and Applications of Polyaniline (PANI) Thin Films ◽

10.4018/978-1-5225-9896-1.ch001 ◽

2020 ◽

pp. 1-27

Keyword(s):

Thin Films ◽

Conducting Polymers ◽

Essential Feature ◽

Molecular Structures ◽

Environmental Stability ◽

Type Material ◽

Acid Base ◽

Potential Applications ◽

P Type ◽

Reduced State

In all conducting polymers (CPs), polyaniline (PANI) is one of the most thoroughly studied CPs. An essential feature of PANI is that its repeating units have two different moieties in different weights: oxidized and reduced state. In light of this element, PANI might be doped to get new molecular structures with various properties. It is considered as a (p-type) material, since it has excellent mechanical flexibility and environmental stability, and its conductivity could be controlled with acid/base (doping/undoping), it has potential applications in numerous fields, for example, lightweight battery electrodes, electromagnetic shielding devices, anti-corrosion coatings, and sensors. This chapter is focused on PANI as a leading polymer and brief synthesis of PANI thin films by the diverse strategies pursued by various applications in different fields.

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Physical, Chemical, and Crystallographic Characterization of Anodic Coatings on High Strength Aluminum Base Alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100093146 ◽

1976 ◽

Vol 34 ◽

pp. 636-637

Author(s):

R. E. Herfert ◽

N. T. McDevitt

Keyword(s):

Sulfuric Acid ◽

Salt Spray ◽

High Strength ◽

Environmental Stability ◽

Anodic Films ◽

Sodium Dichromate ◽

Corrosion Resistant ◽

Aerospace Applications ◽

Bond Strengths ◽

Adhesive Bonded Joints

Durability of adhesive bonded joints in moisture and salt spray environments is essential to USAF aircraft. Structural bonding technology for aerospace applications has depended for many years on the preparation of aluminum surfaces by a sulfuric acid/sodium dichromate (FPL etch) treatment. Recently, specific thin film anodizing techniques, phosphoric acid, and chromic acid anodizing have been developed which not only provide good initial bond strengths but vastly improved environmental durability. These thin anodic films are in contrast to the commonly used thick anodic films such as the sulfuric acid or "hard" sulfuric acid anodic films which are highly corrosion resistant in themselves, but which do not provide good initial bond strengths, particularly in low temperature peel.The objective of this study was to determine the characteristics of anodic films on aluminum alloys that make them corrosion resistant. The chemical composition, physical morphology and structure, and mechanical properties of the thin oxide films were to be defined and correlated with the environmental stability of these surfaces in humidity and salt spray. It is anticipated that anodic film characteristics and corrosion resistance will vary with the anodizing processing conditions.

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Interface morphology of thermal oxide grown on polycrystalline silicon by different processes

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131619 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1396-1397

Author(s):

H. Yen ◽

E. P. Kvam ◽

R. Bashir ◽

S. Venkatesan ◽

G. W. Neudeck

Keyword(s):

Integrated Circuits ◽

Polycrystalline Silicon ◽

Silicon Films ◽

Interface Morphology ◽

Oxide Interface ◽

Poly Silicon ◽

Thermal Oxide ◽

Grain Orientations ◽

Polycrystalline Silicon Films ◽

P Type

Polycrystalline silicon, when highly doped, is commonly used in microelectronics applications such as gates and interconnects. The packing density of integrated circuits can be enhanced by fabricating multilevel polycrystalline silicon films separated by insulating SiO2 layers. It has been found that device performance and electrical properties are strongly affected by the interface morphology between polycrystalline silicon and SiO2. As a thermal oxide layer is grown, the poly silicon is consumed, and there is a volume expansion of the oxide relative to the atomic silicon. Roughness at the poly silicon/thermal oxide interface can be severely deleterious due to stresses induced by the volume change during oxidation. Further, grain orientations and grain boundaries may alter oxidation kinetics, which will also affect roughness, and thus stress.Three groups of polycrystalline silicon films were deposited by LPCVD after growing thermal oxide on p-type wafers. The films were doped with phosphorus or arsenic by three different methods.

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Determination of arsenic atom distribution arsenic doped silicon using HOLZ-line analysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100167342 ◽

1996 ◽

Vol 54 ◽

pp. 976-977

Author(s):

Y. Kikuchi ◽

N. Hashikawa ◽

F. Uesugi ◽

E. Wakai ◽

K. Watanabe ◽

...

Keyword(s):

Inelastic Scattering ◽

Zone Axis ◽

Experimental Result ◽

Background Intensity ◽

Crystal Thickness ◽

Arsenic Atom ◽

Doped Silicon ◽

P Type ◽

Line Analysis

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.

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Investigating the functional link between TMEM165 and SPCA1

Biochemical Journal ◽

10.1042/bcj20190488 ◽

2019 ◽

Vol 476 (21) ◽

pp. 3281-3293 ◽

Cited By ~ 2

Author(s):

Elodie Lebredonchel ◽

Marine Houdou ◽

Hans-Heinrich Hoffmann ◽

Kateryna Kondratska ◽

Marie-Ange Krzewinski ◽

...

Keyword(s):

Subcellular Localization ◽

Complete Loss ◽

Protein Family ◽

Uncharacterized Protein ◽

Functional Link ◽

P Type

TMEM165 was highlighted in 2012 as the first member of the Uncharacterized Protein Family 0016 (UPF0016) related to human glycosylation diseases. Defects in TMEM165 are associated with strong Golgi glycosylation abnormalities. Our previous work has shown that TMEM165 rapidly degrades with supraphysiological manganese supplementation. In this paper, we establish a functional link between TMEM165 and SPCA1, the Golgi Ca2+/Mn2+ P-type ATPase pump. A nearly complete loss of TMEM165 was observed in SPCA1-deficient Hap1 cells. We demonstrate that TMEM165 was constitutively degraded in lysosomes in the absence of SPCA1. Complementation studies showed that TMEM165 abundance was directly dependent on SPCA1's function and more specifically its capacity to pump Mn2+ from the cytosol into the Golgi lumen. Among SPCA1 mutants that differentially impair Mn2+ and Ca2+ transport, only the Q747A mutant that favors Mn2+ pumping rescues the abundance and Golgi subcellular localization of TMEM165. Interestingly, the overexpression of SERCA2b also rescues the expression of TMEM165. Finally, this paper highlights that TMEM165 expression is linked to the function of SPCA1.

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Structural dynamics of P-type ATPase ion pumps

Biochemical Society Transactions ◽

10.1042/bst20190124 ◽

2019 ◽

Vol 47 (5) ◽

pp. 1247-1257 ◽

Cited By ~ 17

Author(s):

Mateusz Dyla ◽

Sara Basse Hansen ◽

Poul Nissen ◽

Magnus Kjaergaard

Keyword(s):

Structural Dynamics ◽

Single Molecule ◽

New Technologies ◽

Atp Hydrolysis ◽

Resonance Energy Transfer ◽

Resonance Energy ◽

Time Resolved ◽

Dynamics Simulations ◽

Types Of Information ◽

P Type

Abstract P-type ATPases transport ions across biological membranes against concentration gradients and are essential for all cells. They use the energy from ATP hydrolysis to propel large intramolecular movements, which drive vectorial transport of ions. Tight coordination of the motions of the pump is required to couple the two spatially distant processes of ion binding and ATP hydrolysis. Here, we review our current understanding of the structural dynamics of P-type ATPases, focusing primarily on Ca2+ pumps. We integrate different types of information that report on structural dynamics, primarily time-resolved fluorescence experiments including single-molecule Förster resonance energy transfer and molecular dynamics simulations, and interpret them in the framework provided by the numerous crystal structures of sarco/endoplasmic reticulum Ca2+-ATPase. We discuss the challenges in characterizing the dynamics of membrane pumps, and the likely impact of new technologies on the field.

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