Air Stable, Amorphous Organic Films and their Applications to Solution Processable Flexible Electronics

2001 ◽  
Vol 708 ◽  
Author(s):  
Janos Veres ◽  
Simon Ogier ◽  
Stephen Leeming ◽  
Beverley Brown ◽  
Domenico Cupertino
Keyword(s):  
Organic Semiconductors ◽  
Flexible Electronics ◽  
Low Cost ◽  
High Mobility ◽  
Environmental Stability ◽  
Electrical Performance ◽  
Organic Films ◽  
Ambient Conditions ◽  
New Class ◽  
P Type

ABSTRACTThe rapidly expanding field of organic semiconductors for display and low-cost electronic applications requires materials, which not only have high mobility but also benefit from solution processability and environmental stability. In this paper we present a new class of solution coatable organic materials with excellent stability to air and light. Spin-coated FET devices operate at ambient conditions without encapsulation and show p-type field-effect mobilities of 2 x 10-3 cm2V-1s-1 and on/off ratios greater than 104. Thin films can be deposited from common organic solvents onto a variety of substrates. These films are mechanically robust and can withstand temperatures in excess of 100 °C without significant changes in electrical performance. FET switching and transient characteristics at higher frequencies are also discussed. These types of materials should find applications in many areas of flexible electronics.

Substituted Indolo[3,2-b]Carbazoles: A New Class of Stable, High Mobility Organic Semiconductors for Thin Film Transistors

2005 ◽  
Vol 871 ◽  
Author(s):  
Yuning Li ◽  
Yiliang Wu ◽  
Beng Ong
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Environmental Stability ◽  
Organic Thin Film ◽  
Ambient Conditions ◽  
New Class ◽  
Self Organized ◽  
Effect Transistor

AbstractProperly functionalized indolo[3,2-b]carbazoles represent a new class of stable, high-mobility organic semiconductors for organic thin-film transistor applications. Both 5,11-disubstituted and peripherally substituted indolo[3,2-b]carbazoles with proper substituents self-organized into highly crystalline terrace-layered structures under suitable processing conditions. Organic TFTs using channel semiconductors of this nature exhibited excellent field-effect transistor properties, with mobility to 0.14 cm2 V-1 s-1 and current on/off ratio to 107. By virtue of their relatively low HOMO levels and large band gaps, this class of semiconductors also displayed excellent environmental stability under ambient conditions, an appealing characteristic for organic TFT applications.

scholarly journals Material Design Inputs from Charge Density Analysis in Organic Semiconductors

2014 ◽  
Vol 70 (a1) ◽  
pp. C1552-C1552
Author(s):  
Venkatesha Hathwar ◽  
Mads Jørgensen ◽  
Mattia Sist ◽  
Jacob Overgaard ◽  
Bo Iversen ◽  
...  
Keyword(s):  
Single Crystal ◽  
Electron Density ◽  
Organic Semiconductors ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Material Design ◽  
Detailed Comparison ◽  
Light Emitting ◽  
Density Analysis ◽  
P Type

In recent years, semiconducting organic materials have attracted a considerable amount of interest to develop all-organic or hybrid organic-inorganic electronic devices such as organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs), or photovoltaic cells. Rubrene (5,6,11,12-tetraphenyltetracene, RUB) is one of the most explored compound in this area as it has nearly 100% fluorescence quantum efficiency in solution. Additionally, the OFET fabricated by vacuum-deposited using orthorhombic rubrene single crystals show p-type characteristics with high mobility up to 20cm2/Vs (Podzorov et al., 2004). The large charge-carrier mobilities measured have been attributed to the packing motif (Fig a) which provides enough spatial overlap of the π-conjugated tetracene backbone. In the same time, RUB undergoes an oxidation in the presence of light to form rubrene endoperoxide (RUB-OX) (Fumagalli et al., 2011). RUB-OX molecules show electronic and structural properties strikingly different from those of RUB, mainly due to the disruption in the conjugate stacking of tetracene moieties. The significant semiconducting property of RUB is not clear yet. In this context, high resolution single crystal X-ray data of RUB (Fig b) and RUB-OX have been collected at 100K. Owing to the presence of weak aromatic stacking and quadrupolar interactions, the neutron single crystal data is also collected at 100K. The C-H bond distances and scaled anisotropic displacement parameters (ADP) of hydrogens from the neutron experiment are used in the multipolar refinements of electron density. The chemical bonding features (Fig c), the topology of electron density and strength of weak interaction are calculated by the Atoms in Molecules (AIM) theory (Bader, 1990). It is further supported by the source function description and mapping of non-covalent interactions based on the electron density. The detailed comparison of two organic semiconductors, RUB and RUB-OX will be discussed.

Fullerene Based n-type Organic Thin-Film Transistors

2005 ◽  
Vol 871 ◽  
Author(s):  
Joshua Haddock ◽  
Benoit Domercq ◽  
Bernard Kippelen
Keyword(s):  
Organic Semiconductors ◽  
Field Effect Transistors ◽  
High Vacuum ◽  
Channel Length ◽  
Organic Films ◽  
Limiting Factor ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
P Type ◽  
Made In

AbstractSignificant progress has been made in the area of p-type organic field effect transistors while progress in developing n-type materials and devices has been comparatively lacking, a limiting factor in the pursuit to develop complementary organic electronic circuits. Given the need for n-type organic semiconductors we have carried out studies using two different fullerene molecules, C60 and C70. Here, we report mobilities for C60 ranging from 0.02 cm2/Vs up to 0.65 cm2/Vs (depending on channel length), and mobilities from 0.003 cm2/Vs up to 0.066 cm2/Vs for C70. All devices were fabricated with organic films deposited under high vacuum but tested at ambient pressures under nitrogen.

Inkjetted Organic Transistors using a Novel Pentacene Precursor

2003 ◽  
Vol 771 ◽  
Author(s):  
Steven K. Volkman ◽  
Steven Molesa ◽  
Brian Mattis ◽  
Paul C. Chang ◽  
Vivek Subramanian
Keyword(s):  
Organic Semiconductors ◽  
Low Cost ◽  
Film Deposition ◽  
Environmental Stability ◽  
Great Promise ◽  
Organic Transistors ◽  
Organic Transistor ◽  
Circuit Fabrication ◽  
Precursor Decomposition ◽  
Transistor Fabrication

AbstractPentacene is one of the most promising organic materials for organic transistor fabrication, since it offers higher mobility, better on-off ratio, improved environmental stability, and better reliability than most other organic semiconductors. However, its severe insolubility renders it useless for the solution-based fabrication of electronic devices. Solution-based processing is the key to enabling ultra-low-cost circuit fabrication, since it eliminates the need for lithography, subtractive processing, and vacuum-based film deposition. Using a recently developed soluble pentacene precursor, we demonstrate the first inkjet-printed pentacene transistor fabricated to date. This is achieved using a substrate-gated transistor structure in conjunction with an inkjetprinted pentacene precursor active layer. After deposition, the precursor is converted to pentacene via heating, through the decomposition of the Diels-Alder product. As the anneal temperature increases above 120°C, performance increases dramatically. The process is therefore compatible with numerous low-temperature plastics. As the anneal time is increased to several minutes, performance likewise increases through increased precursor decomposition. However, exposure to excess temperatures or times tends to degrade performance. This is caused by morphological and chemical changes in the pentacene film. Optimization of the anneal process alone has resulted in the demonstration of transistors with an on-off ratio of >105 and field-effect mobility of >0.01cm2/V-s, attesting to the great promise of this material.

Designing solution-processable air-stable liquid crystalline crosslinkable semiconductors

2006 ◽  
Vol 364 (1847) ◽  
pp. 2779-2787 ◽  
Author(s):  
Iain McCulloch ◽  
Clare Bailey ◽  
Kristijonas Genevicius ◽  
Martin Heeney ◽  
Maxim Shkunov ◽  
...  
Keyword(s):  
Radio Frequency Identification ◽  
Integrated Circuit ◽  
Liquid Crystalline ◽  
Mechanical Stability ◽  
Light Emitting Diode ◽  
Low Cost ◽  
Electrical Characterization ◽  
Electrical Performance ◽  
Ambient Conditions ◽  
Solvent Exposure

Organic electronics technology, in which at least the semiconducting component of the integrated circuit is an organic material, offers the potential for fabrication of electronic products by low-cost printing technologies, such as ink jet, gravure offset lithography and flexography. The products will typically be of lower performance than those using the present state of the art single crystal or polysilicon transistors, but comparable to amorphous silicon. A range of prototypes are under development, including rollable electrophoretic displays, active matrix liquid crystal (LC) displays, flexible organic light emitting diode displays, low frequency radio frequency identification tag and other low performance electronics. Organic semiconductors that offer both electrical performance and stability with respect to storage and operation under ambient conditions are required. This work describes the development of reactive mesogen semiconductors, which form large crosslinked LC domains on polymerization within mesophases. These crosslinked domains offer mechanical stability and are inert to solvent exposure in further processing steps. Reactive mesogens containing conjugated aromatic cores, designed to facilitate charge transport and provide good oxidative stability, were prepared and their liquid crystalline properties evaluated. The organization and alignment of the mesogens, both before and after crosslinking, were probed by grazing incidence wide-angle X-ray scattering of thin films. Both time-of-flight and field effect transistor devices were prepared and their electrical characterization reported.

scholarly journals Dicyano- and tetracyanopentacene: foundation of an intriguing new class of easy-to-synthesize organic semiconductors

2017 ◽  
Vol 5 (10) ◽  
pp. 2603-2610 ◽  
Author(s):  
Florian Glöcklhofer ◽  
Andreas Petritz ◽  
Esther Karner ◽  
Michael J. Bojdys ◽  
Barbara Stadlober ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Molecular Packing ◽  
Ambient Conditions ◽  
New Class

Extraordinarily low LUMO levels, dense molecular packing, an intriguing packing motif, reversible bleaching and OTFT operability under ambient conditions are revealed in a detailed investigation of multi-cyanated pentacenes.

scholarly journals Highly sensitive and room temperature detection of ultra-low concentrations of O3 using self-powered sensing elements of Cu2O nanocubes

2019 ◽  
Vol 1 (5) ◽  
pp. 2009-2017 ◽  
Author(s):  
E. Petromichelaki ◽  
E. Gagaoudakis ◽  
K. Moschovis ◽  
L. Tsetseris ◽  
T. D. Anthopoulos ◽  
...  
Keyword(s):  
Metal Oxides ◽  
Room Temperature ◽  
Gas Sensing ◽  
Low Cost ◽  
New Class ◽  
Temperature Detection ◽  
Low Concentrations ◽  
Highly Sensitive ◽  
Self Powered ◽  
P Type

The fundamental development of the design of novel self-powered ozone sensing elements, operating at room temperature, based on p-type metal oxides paves the way to a new class of low cost, highly promising gas sensing devices.

PTV-based p-type organic semiconductors: Candidates for low-cost photovoltaic donors with simple synthetic routes

Polymer ◽  
2020 ◽  
Vol 209 ◽  
pp. 122900 ◽  
Author(s):  
Pengqing Bi ◽  
Junzhen Ren ◽  
Shaoqing Zhang ◽  
Jingwen Wang ◽  
Jianhui Hou
Keyword(s):  
Organic Semiconductors ◽  
Low Cost ◽  
Synthetic Routes ◽  
P Type

New Conducting and Semiconducting Polymers for Organic Photovoltaics

2010 ◽  
Vol 1270 ◽  
Author(s):  
Shawn Sapp ◽  
Silvia Luebben
Keyword(s):  
Organic Photovoltaics ◽  
Flexible Electronics ◽  
Printed Electronics ◽  
Electronic Materials ◽  
Low Cost ◽  
Semiconducting Polymers ◽  
Semiconducting Materials ◽  
Organic Electronic Devices ◽  
New Class ◽  
Intrinsically Conducting Polymers

AbstractIn the emerging field of low-cost printed electronics there is a lack of solvent processable conducting and semiconducting materials with highly tuned and known electronic properties. Currently the best performing conductors and semiconductors are not sufficient to produce truly printable, cost competitive organic photovoltaics (OPVs). TDA Research, Inc. (TDA) has been investigating a new class of solvent processable intrinsically conducting polymers for use as charge transport and transparent conducting layers in organic electronic devices. We have also begun the manufacture of electron-deficient semiconducting polymers that may prove to be excellent acceptors in bulk hetero-junction OPVs. This paper presents a summary of the materials characterization conducted on TDA's new electronic materials and how these may address several of the pressing issues preventing the realization of low-cost, printed solar cells and flexible electronics devices.

Screen Printable Semiconductor Grade Inks for N and P type Doping of Polysilicon

MRS Advances ◽  
2016 ◽  
Vol 1 (14) ◽  
pp. 965-970 ◽  
Author(s):  
Aditi Chandra ◽  
Mao Takashima ◽  
Martha Montague ◽  
Joey Li ◽  
Arvind Kamath
Keyword(s):  
High Throughput ◽  
Process Integration ◽  
Low Cost ◽  
High Mobility ◽  
Form Factors ◽  
Surface Preparation ◽  
Production Environment ◽  
Additive Process ◽  
P Type ◽  
Screen Printed

ABSTRACTThis article describes the electrical and physical properties of polysilicon doped with novel N+ and P+ screen printed inks using a thermally activated process. Unique ink formulations for N and P type doping of silicon are evaluated in volume production in order to enable a low cost, high throughput process. Inks can be used with multiple substrate types and form factors. The concentrated doping source combined with thermal drive in and activation results in degenerately doped layers of polysilicon. Inks are semiconductor grade which is demonstrated by their use in fabricating high mobility, low leakage Thin Film Transistor (TFT) devices on 300 mm stainless steel substrates. Reproducible sheet resistance values (700 A polysilicon) can be engineered from levels typically ranging from 200 - 2000 ohm/sq. The additive approach substitutes the use of high capital cost ion implantation and lithography processes. The ink formulation results in screen printed widths capable of ranging from 100-300 um. As both N and P type layers can be printed adjacent to each other, it is critical to prevent cross doping using surface preparation techniques. Post doping cleaning of surfaces can be achieved in-situ or by plasma removal depending on process integration and product considerations. Reproducibility and uniformity data to demonstrate manufacturability in a production environment is shown. In summary, a simple, low cost, high throughput additive process based on proprietary inks that can be used in multiple product flows (CMOS TFT, Solar etc.) is demonstrated.

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