Deposition of Lanthanum Zirconium Oxide High-k Films by Liquid Injection ALD and MOCVD

2007 ◽  
Vol 13 (12) ◽  
pp. 684-690 ◽  
Author(s):  
J. M. Gaskell ◽  
A. C. Jones ◽  
P. R. Chalker ◽  
M. Werner ◽  
H. C. Aspinall ◽  
...  
Keyword(s):  
Zirconium Oxide ◽  
High K ◽  
Liquid Injection ◽  
Lanthanum Zirconium Oxide

ChemInform Abstract: Deposition of Lanthanum Zirconium Oxide High-k Films by Liquid Injection ALD and MOCVD.

ChemInform ◽  
2008 ◽  
Vol 39 (9) ◽  
Author(s):  
Jeffrey M. Gaskell ◽  
Anthony C. Jones ◽  
Paul R. Chalker ◽  
Matthew Werner ◽  
Helen C. Aspinall ◽  
...  
Keyword(s):  
Zirconium Oxide ◽  
High K ◽  
Liquid Injection ◽  
Lanthanum Zirconium Oxide

Deposition of lanthanum zirconium oxide high-κ films by liquid injection atomic layer deposition

2007 ◽  
Vol 91 (11) ◽  
pp. 112912 ◽  
Author(s):  
J. M. Gaskell ◽  
A. C. Jones ◽  
H. C. Aspinall ◽  
S. Taylor ◽  
P. Taechakumput ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Zirconium Oxide ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Liquid Injection ◽  
Lanthanum Zirconium Oxide

scholarly journals Thermal effect of annealing-temperature on solution-processed high-k ZrO2 dielectrics

RSC Advances ◽  
2019 ◽  
Vol 9 (72) ◽  
pp. 42415-42422 ◽  
Author(s):  
Shangxiong Zhou ◽  
Jianhua Zhang ◽  
Zhiqiang Fang ◽  
Honglong Ning ◽  
Wei Cai ◽  
...  
Keyword(s):  
Thermal Effect ◽  
Spin Coating ◽  
Zirconium Oxide ◽  
Annealing Temperature ◽  
Solution Processed ◽  
Annealing Temperatures ◽  
Post Annealing ◽  
High K

In this paper, a solution-processed zirconium oxide (ZrO2) dielectric was deposited by spin coating with varying pre-annealing temperatures and post-annealing temperatures.

Modified Lanthanum Zirconium Oxide buffer layers for low-cost, high performance YBCO coated conductors

2010 ◽  
Vol 470 (5-6) ◽  
pp. 352-356 ◽  
Author(s):  
M. Parans Paranthaman ◽  
S. Sathyamurthy ◽  
Xiaoping Li ◽  
E.D. Specht ◽  
S.H. Wee ◽  
...  
Keyword(s):  
Zirconium Oxide ◽  
High Performance ◽  
Low Cost ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Lanthanum Zirconium Oxide ◽  
Ybco Coated Conductors

High-Intensity Ultrasound-Assisted Low-Temperature Formulation of Lanthanum Zirconium Oxide Nanodispersion for Thin-Film Transistors

2020 ◽  
Vol 12 (40) ◽  
pp. 44926-44933
Author(s):  
Pavan Pujar ◽  
Kishor Kumar Madaravalli Jagadeeshkumar ◽  
Muhammad Naqi ◽  
Srinivas Gandla ◽  
Hae Won Cho ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
High Intensity ◽  
Zirconium Oxide ◽  
Thin Film Transistors ◽  
High Intensity Ultrasound ◽  
Ultrasound Assisted ◽  
Lanthanum Zirconium Oxide
Sign in / Sign up

Export Citation Format

Share Document