Kinetics of OH reactions with aliphatic thiols

1984 ◽  
Vol 16 (12) ◽  
pp. 1623-1636 ◽  
Author(s):  
P. H. Wine ◽  
R. J. Thompson ◽  
D. H. Semmes
Keyword(s):  
Oh Reactions ◽  
Aliphatic Thiols ◽  
Kinetics Of

scholarly journals Experimental and Computational Investigations into Trivalent Phosphorous-Mediated Radical Thiol Desulfurization

2021 ◽  
Author(s):  
John Lopp ◽  
Valerie Schmidt
Keyword(s):  
Atom Transfer ◽  
Radical Intermediate ◽  
Thiyl Radicals ◽  
Trigonal Bipyramidal ◽  
Peptide Modification ◽  
Aliphatic Thiols ◽  
Mechanism And Kinetics ◽  
Kinetics Of ◽  
Marked Dependence ◽  
Distorted Trigonal Bipyramidal

Radical-mediated thiol desulfurization processes using tricoordinate phosphorous reagents are used in a range of applications from small molecule synthesis to peptide modification. A combined experimental and computational examination of the mechanism and kinetics of the radical desulfurization of alkyl thiyl radicals using trivalent phosphorus reagents was performed. Primary alkyl thiols undergo desulfurization between 10^6 to 10^9 M-1s-1 depending on the phosphorus component with either an H-atom transfer step or β-fragmentation of the thiophosphoranyl intermediate may be rate-controlling. While the desulfurization of primary aliphatic thiols showed a marked dependence on the identity of phosphorous reagent used with either a rate-controlling H-atom transfer or -fragmentation, thiols yielding stabilized C-centered radicals showed much less sensitivity. Support for a stepwise S-atom transfer process progressing via a distorted trigonal bipyramidal thiophosphoranyl radical intermediate was obtained from DFT calculated energetics and hyperfine splitting values.

On the Control of Plasma Chemistry and Silicon Etching Kinetics in Ternary HBr + Cl2 + O2 Gas System: Effects of HBr/O2 and Cl2/O2 Mixing Ratios

2020 ◽  
Vol 12 (5) ◽  
pp. 628-640
Author(s):  
Byung Jun Lee ◽  
Alexander Efremov ◽  
Yunho Nam ◽  
Kwang-Ho Kwon
Keyword(s):  
Etching Rate ◽  
Plasma Chemistry ◽  
Active Species ◽  
Reaction Products ◽  
Mixing Ratios ◽  
Adsorption Sites ◽  
Gas System ◽  
Molecular Reaction ◽  
Oh Reactions ◽  
Kinetics Of

The influences of both HBr/O2 (at constant Cl2 fraction) and Cl2/O2 (at constant HBr fraction) ratios in HBr + Cl 2 + O2 gas mixture on bulk plasma characteristics, active species densities and etching kinetics of silicon were studied. The results indicated that an increase in O2 content in a feed gas at constant Cl2 fraction in a processing gas (1) produces the stronger impact on plasma chemistry by the influence on the kinetics of electron-impact and atom-molecular reaction; and (2) provides the wider adjustments for both halogen atom flux and ion flux with the opposite tendencies with those for variable Cl2/O2 mixing ratio. The experiments demonstrated that the transition toward more oxygenated plasmas in both cases lowers the Si etching rate as well as result is decreasing effective reaction probability and etching yield. These effects may be associated with decreasing amount of adsorption sites for Cl/Br atoms as well as increasing sputtering (ion-stimulated desorption) threshold for reaction products due to the formation of the low-volatile silicon oxy-chlorides and-bromides in heterogeneous SiClx + O/OH and SiBrx + O/OH reactions.

Direct observations of radiation-enhanced transformations in glass

1983 ◽  
Vol 41 ◽  
pp. 354-355
Author(s):  
J. F. DeNatale ◽  
D. G. Howitt
Keyword(s):  
Glass Matrix ◽  
Diffusion Mechanism ◽  
Bubble Formation ◽  
Silicate Glasses ◽  
Phase Decomposition ◽  
Direct Observations ◽  
Thin Foils ◽  
Oxygen Bubble ◽  
Electron Energy Loss ◽  
Kinetics Of

The electron irradiation of silicate glasses containing metal cations produces various types of phase separation and decomposition which includes oxygen bubble formation at intermediate temperatures figure I. The kinetics of bubble formation are too rapid to be accounted for by oxygen diffusion but the behavior is consistent with a cation diffusion mechanism if the amount of oxygen in the bubble is not significantly different from that in the same volume of silicate glass. The formation of oxygen bubbles is often accompanied by precipitation of crystalline phases and/or amorphous phase decomposition in the regions between the bubbles and the detection of differences in oxygen concentration between the bubble and matrix by electron energy loss spectroscopy cannot be discerned (figure 2) even when the bubble occupies the majority of the foil depth.The oxygen bubbles are stable, even in the thin foils, months after irradiation and if van der Waals behavior of the interior gas is assumed an oxygen pressure of about 4000 atmospheres must be sustained for a 100 bubble if the surface tension with the glass matrix is to balance against it at intermediate temperatures.

Irradiation behavior of pyrolytic silicon carbide

1983 ◽  
Vol 41 ◽  
pp. 72-73
Author(s):  
R. J. Lauf
Keyword(s):  
Silicon Carbide ◽  
Fission Products ◽  
Thermodynamics And Kinetics ◽  
Neutron Fluences ◽  
Fuel Particles ◽  
Sic Coatings ◽  
Irradiation Behavior ◽  
Kinetics Of ◽  
Htgr Fuel

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide to act as a miniature pressure vessel and primary fission product barrier. Optimization of the SiC with respect to fuel performance involves four areas of study: (a) characterization of as-deposited SiC coatings; (b) thermodynamics and kinetics of chemical reactions between SiC and fission products; (c) irradiation behavior of SiC in the absence of fission products; and (d) combined effects of irradiation and fission products. This paper reports the behavior of SiC deposited on inert microspheres and irradiated to fast neutron fluences typical of HTGR fuel at end-of-life.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

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