Effect of Bend on Forward Current of Plate-Shaped Germanium Diodes

1969 ◽  
Vol 35 (2) ◽  
pp. K163-K166
Author(s):  
Z. S. Gribnikov ◽  
I. P. Zhadko ◽  
V. A. Romanov ◽  
B. K. Serdega
Keyword(s):  
Energies ◽  
2020 ◽  
Vol 13 (14) ◽  
pp. 3732
Author(s):  
Krzysztof Górecki ◽  
Przemysław Ptak ◽  
Tomasz Torzewicz ◽  
Marcin Janicki

This paper is devoted to the analysis of the influence of thermal pads on electric, optical, and thermal parameters of power LEDs. Measurements of parameters, such as thermal resistance, optical efficiency, and optical power, were performed for selected types of power LEDs operating with a thermal pad and without it at different values of the diode forward current and temperature of the cold plate. First, the measurement set-up used in the paper is described in detail. Then, the measurement results obtained for both considered manners of power LED assembly are compared. Some characteristics that illustrate the influence of forward current and temperature of the cold plate on electric, thermal, and optical properties of the tested devices are presented and discussed. It is shown that the use of the thermal pad makes it possible to achieve more advantageous values of operating parameters of the considered semiconductor devices at lower values of their junction temperature, which guarantees an increase in their lifetime.


2021 ◽  
Vol 68 (3) ◽  
pp. 1369-1373
Author(s):  
Xuanwu Kang ◽  
Yue Sun ◽  
Yingkui Zheng ◽  
Ke Wei ◽  
Hao Wu ◽  
...  

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.


2004 ◽  
Vol 43 (3) ◽  
pp. 904-908 ◽  
Author(s):  
Takasumi Ohyanagi ◽  
Toshiyuki Ohno ◽  
Atsuo Watanabe

2013 ◽  
Vol 717 ◽  
pp. 113-116
Author(s):  
Sani Klinsanit ◽  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Sunya Khunkhao ◽  
Budsara Nararug ◽  
...  

The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode.


2014 ◽  
Vol 211 (11) ◽  
pp. 2558-2562 ◽  
Author(s):  
L. F. Makarenko ◽  
S. B. Lastovskii ◽  
H. S. Yakushevich ◽  
M. Moll ◽  
I. Pintilie

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